Results 81 to 90 of about 3,470 (154)

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

open access: yesAdvanced Physics Research
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj   +1 more source

FangTianSim: High-Level Cycle-Accurate Resistive Random-Access Memory-Based Multi-Core Spiking Neural Network Processor Simulator. [PDF]

open access: yesFront Neurosci, 2021
Wei J   +10 more
europepmc   +1 more source

Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array. [PDF]

open access: yesMicromachines (Basel), 2021
Chen Z   +6 more
europepmc   +1 more source

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers. [PDF]

open access: yesNanomaterials (Basel)
Liu K   +9 more
europepmc   +1 more source

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