Results 81 to 90 of about 15,800,199 (248)
, 2016 In this paper we present the results of a systematic study of resistive states cycling dispersion in HfOx Resistive Random Access Memory (RRAM). A wide set of experimental data is collected on several RRAM devices in different operating conditions.
PUGLISI, Francesco Maria +3 more
core +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
Advanced Functional Materials, EarlyView.An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
, 2012 A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated.
Ryoo, Kyung-Chang +4 more
core +1 more source
Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory
Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals.
Murali, Santosh
core +5 more sources
Advanced Functional Materials, EarlyView.Keratin recovered from animal‐hair textile waste is fractionated and blended with cellulose to produce continuously spun hybrid fibers. Selecting the high‐molecular‐weight keratin fraction enables 30 wt.% keratin incorporation while maintaining high strength in dry and wet states.
Mian Zhai +6 more
wiley +1 more source
Cerium oxide based resistive random access memory devices [PDF]
, 2017 Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal transition into a conductive state has been known for over 40 years ...
Hsieh, Cheng Chih
core +1 more source
Electrical‐Programming‐Free Neural Crossbars Enabled by Photochemical Weight Patterning
Advanced Functional Materials, EarlyView.A flexible neural‐crossbar hardware system enabled by electrical‐programming‐free, mask‐defined, array‐parallel photochemical weight patterning is demonstrated. Trained weights are physically implemented across the array, supporting multilevel programming, bending‐stable operation and reconfiguration, substrate reuse, and low‐energy readout while ...
Hyo‐Bin Jang +5 more
wiley +1 more source
Total dose hardness of TiN/HfOx/TiN resistive random access memory devices
, 2014 Resistive random access memory based on TiN/HfOx/TiN has been fabricated. Sweep and pulsed electrical characteristics were extracted before and after Co60 gamma irradiation. All devices were shown to be radiation hard up to 10Mrad(Si)
Redman-White, William +5 more
core