Results 101 to 110 of about 15,800,199 (248)

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery
The quest for energy‐efficient, scalable neuromorphic computing has elevated compute‐in‐memory (CIM) architectures to the forefront of hardware innovation.
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
doaj   +1 more source

A hardware Markov chain algorithm realized in a single device for machine learning

Nature Communications, 2018
Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian, Xue-Feng Wang, Mohammad Ali Mohammad, Guang-Yang Gou, Fan Wu, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee, Hyoik Jang, Ji Hwan Kim, Jonghyun Won, Namhee Kim, Wonseok Shin, Giwon Lee, Eunho Lee, Daegun Kim, Sungjun Park   +9 more
wiley   +1 more source

Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides

Advanced Functional Materials, EarlyView.
Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla, Yoshio Miura, Mayank K. Singh, Shinji Isogami   +3 more
wiley   +1 more source

Surface effects of electrode-dependent switching behavior of resistive random-access memory [PDF]

, 2016
The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality.
Wei, Tzu Chiao, Tsai, Dung Sheng, Ke, Jr Jian, He, Jr-Hau, Lin, Chun-Ho   +4 more
core   +1 more source

Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout

IEEE Open Journal of Nanotechnology
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct ...
Roopesh Singh, Shivam Verma
doaj   +1 more source

Material Coupling in Hybrid Neuromorphic Devices: From Fundamentals to System‐Level Applications

Advanced Functional Materials, EarlyView.
Hybrid neuromorphic devices utilize heterointerfaces between emerging semiconductors, where charge transfer and trapping, ion or defect modulation, and photogating are translated into synaptic functions. This paper discusses coupling strategies that tailor interfacial electronic and ionic properties in organic semiconductors, metal oxides, two ...
Minsu So, Sunwoo Jeong, Youngmin Han, Fabrizio Torricelli, Hocheon Yoo, Junhwan Choi   +5 more
wiley   +1 more source

Structural analysis of anodic porous alumina used for resistive random access memory

Science and Technology of Advanced Materials, 2010
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect.
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
doaj  

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source