Results 101 to 110 of about 14,908,555 (316)
Cerium oxide based resistive random access memory devices [PDF]
, 2017 Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal transition into a conductive state has been known for over 40 years ...
Hsieh, Cheng Chih
core +1 more source
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Advanced Electronic Materials, 2019 A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11 1¯ ) is grown onto a c‐cut Al2O3‐substrate to target the role of grain boundaries in resistive switching.
S. Petzold +10 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.Inspired by skeletal muscles’ precision and endurance, CoilLCE integrates a self‐sensing liquid crystal elastomer/graphene artificial muscle with an embedded Joule‐heating copper coil, enabling closed‐loop multistage actuation with programmable intermediate states (strain accuracy of 2%), and antagonistic coordination (32% total strain). These features
Ziyun Zhang +9 more
wiley +1 more source
, 2017 Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong
core +1 more source
Multistate resistive switching in silver nanoparticle films
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +1 more source
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
Advanced Functional Materials, EarlyView.An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Keratin recovered from animal‐hair textile waste is fractionated and blended with cellulose to produce continuously spun hybrid fibers. Selecting the high‐molecular‐weight keratin fraction enables 30 wt.% keratin incorporation while maintaining high strength in dry and wet states.
Mian Zhai +6 more
wiley +1 more source
Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites
Advanced Functional Materials, EarlyView.Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto +4 more
wiley +1 more source
, 2018 The effect of AC pulse engineering on the nonlinearity and reliability of selectorless resistive random access memory was investigated in order to implement a high-density cross-point array.
Hwang, H +5 more
core +1 more source
Quantum Dots for Resistive Switching Memory and Artificial Synapse
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
doaj +1 more source