Results 101 to 110 of about 3,470 (154)

High Performance All Nonmetal SiN_x Resistive Random Access Memory with Strong Process Dependence. [PDF]

Sci Rep, 2020
Yen TJ, Chin A, Gritsenko V.
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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications. [PDF]

Nanoscale Res Lett, 2020
Zahoor F, Azni Zulkifli TZ, Khanday FA.
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Improved Intrinsic Nonlinear Characteristics of Ta₂O₅/Al₂O₃-Based Resistive Random-Access Memory for High-Density Memory Applications. [PDF]

Materials (Basel), 2020
Ryu JH, Kim S.
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Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems. [PDF]

Materials (Basel), 2019
Sun W, Choi S, Kim B, Park J.
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A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model. [PDF]

Nanoscale Res Lett, 2018
Kao YF, Zhuang WC, Lin CJ, King YC.
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Detection of bovine serum albumin using hybrid TiO₂ + graphene oxide based Bio - resistive random access memory device. [PDF]

Sci Rep, 2019
Sahu DP, Jammalamadaka SN.
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Remote control of resistive switching in TiO₂ based resistive random access memory device. [PDF]

Sci Rep, 2017
Sahu DP, Jammalamadaka SN.
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Coding for Resistive Random-Access Memory Channels

GLOBECOM 2020 - 2020 IEEE Global Communications Conference, 2020
In this paper, we propose channel coding techniques that can mitigate both the sneak-path interference and the channel noise for resistive random-access memory (ReRAM) channels. The main challenge is that the sneak-path interference is data-dependent, and also correlated within a memory array, and hence the conventional error correction coding scheme ...
Guanghui Song, Kui Cai 0001, Xingwei Zhong, Jiang Yu, Jun Cheng 0001   +4 more
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Selector Failure Detection for Resistive Random Access Memories

2021 IEEE International Symposium on Information Theory (ISIT), 2021
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays.
Guanghui Song, Kui Cai 0001, Ce Sun, Xingwei Zhong, Jun Cheng 0001   +4 more
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