Results 111 to 120 of about 14,908,555 (316)

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies   +2 more
wiley   +1 more source

A Unique March Test Algorithm for the Wide Spread of Realistic Memory Faults in SRAMs [PDF]

open access: yes, 2006
Among the different types of algorithms proposed to test static random access memories (SRAMs), march tests have proven to be faster, simpler and regularly structured.
Di Natale, Giorgio   +4 more
core   +1 more source

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

open access: yesAIP Advances, 2017
A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory.
R. Aluguri   +3 more
doaj   +1 more source

Accelerated Discovery of Topological Spin Phase Diagrams in CrSBr Magnets Via High‐Throughput Optimization

open access: yesAdvanced Functional Materials, EarlyView.
Here, we develop a high‐throughput algorithm that accelerates the elucidation of phase diagrams of topological spin textures using limited computational resources at high numerical accuracy. Applying this framework to the van der Waals magnet CrSBr, we unveiled a hierarchy of previously unknown topological textures (domain‐wall bimerons, bimeron chains,
Andrew Lyall   +4 more
wiley   +1 more source

Stoichiometry and volume dependent transport in lithium ion memristive devices

open access: yesAIP Advances, 2018
LixCoO2, a thoroughly studied cathode material used extensively in Li-ion rechargeable batteries, has recently been proposed as a potential candidate for resistive random access memory and neuromorphic system applications.
Charis M. Orfanidou   +8 more
doaj   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee   +21 more
wiley   +1 more source

Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

open access: yes, 2012
A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated.
Ryoo, Kyung-Chang   +4 more
core   +1 more source

Chemical Strategies for Multistimuli Responsive Dynamic Covalent Materials in Regenerative Medicine

open access: yesAdvanced Healthcare Materials, EarlyView.
Multistimuli responsive dynamic covalent materials integrate reversible chemistry with the complex chemical, mechanical, and biochemical cues of regenerative environments. This review highlights chemical strategies based on orthogonal dynamic bonds, multicomponent networks, and hierarchical architectures to regulate mechanics, degradation, and ...
Saurabh Joshi   +2 more
wiley   +1 more source

Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]

open access: yes, 2010
Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken   +9 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy