Results 111 to 120 of about 3,470 (154)

Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
openaire   +1 more source

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Proceedings of the IEEE, 2010
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also
H Akinaga, Hisashi Shima
exaly   +2 more sources

Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory

2015 45th European Solid State Device Research Conference (ESSDERC), 2015
In this paper we explore the features of complex anomalous Random Telegraph Noise (aRTN) in TiN/Ti/HfO 2 /TiN Resistive Random Access Memory (RRAM) devices. Careful systematic experiment, dedicated characterization techniques, and physics-based simulations are exploited to gain insights into the physics of this phenomenon. The RTN parameters (amplitude
PUGLISI, Francesco Maria, LARCHER, Luca, PADOVANI, ANDREA, PAVAN, Paolo   +3 more
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Noise in Resistive Random Access Memory Devices

2020
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world.
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Halide perovskites for resistive random-access memories

Journal of Materials Chemistry C, 2019
Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.
Hyojung Kim, Ji Su Han, Sun Gil Kim, Soo Young Kim, Ho Won Jang   +4 more
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Resistance random access memory switching mechanism

Journal of Applied Physics, 2007
The properties of Pr0.7Ca0.3MnO3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Based on the experimental data it is concluded that the resistance increase is due to localization of ...
Sheng T. Hsu, Tingkai Li, Nobuyoshi Awaya   +2 more
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Operation methods of resistive random access memory

Science China Technological Sciences, 2014
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM).
GuoMing Wang, ShiBing Long, MeiYun Zhang, Yang Li, XiaoXin Xu, HongTao Liu, Ming Wang, PengXiao Sun, HaiTao Sun, Qi Liu, HangBing Lü, BaoHe Yang, Ming Liu   +12 more
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Unipolar Resistance Switching in Polymeric Resistance Random Access Memories

Japanese Journal of Applied Physics, 2009
We investigate the characteristic features of unipolar resistance switching in polymeric devices based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and demonstrate the unipolar switching cycles controlled by a series resistor. The device with a set compliance current (CC) of 10 mA and a bottom electrode thickness (tBE) of 300
Kim, M, Kim, O
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Resistive Random Access Memory for Future Information Processing System

Proceedings of the IEEE, 2017
Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile memory (NVM), and storage class memory (SCM) due to its speed, density, cost, and scalability.
Huaqiang Wu, Xiao Hu Wang, Bin Gao 0006, Ning Deng 0008, Zhichao Lu, Brent Haukness, Gary Bronner, He Qian   +7 more
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NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

ACS Nano, 2010
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO(3) substrate containing terraces with a regular interval of about 100 nm and an atomically smooth surface. For the formation of the NiO RRAM nanocapacitor (Pt/NiO/graphene capacitor) array, an anodic aluminum oxide (AAO) nanotemplate with a ...
Son, JY, Shin, YH, Kim, H, Jang, HM
openaire   +3 more sources