Results 111 to 120 of about 15,800,199 (248)

Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

, 2016
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge ...
Kim, Tae-Hyun, Venkatachalam, Dinesh, Belay, Kidane, Nawaz (Saleh), Muhammad, Karouta, Fouad, Elliman, Robert   +5 more
core   +1 more source

Remote control of resistive switching in TiO2 based resistive random access memory device

, 2017
We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics.
Jammalamadaka, S Narayana, Sahu, Dwipak Prasad   +1 more
core   +2 more sources

Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models

Nature Communications
Compute-in-memory based on resistive random-access memory has emerged as a promising technology for accelerating neural networks on edge devices. It can reduce frequent data transfers and improve energy efficiency.
Wenshuo Yue, Kai Wu, Zhiyuan Li, Juchen Zhou, Zeyu Wang, Teng Zhang, Yuxiang Yang, Lintao Ye, Yongqin Wu, Weihai Bu, Shaozhi Wang, Xiaodong He, Xiaobing Yan, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang   +16 more
doaj   +1 more source

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability

, 2012
Resistive random access memory (RRAM) with a new structure which can effectively control switching area and electric field is proposed. It has been verified that the decrease in area of resistive material with the new structure increases electric field ...
Ryoo, Kyung-Chang, Jeong, Hongsik, Kim, Sungjun, Park, Byung-Gook, Oh, Jeong-Hoon, Jung, Sunghun   +5 more
core   +1 more source

An overview of critical applications of resistive random access memory

Nanoscale Advances
The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits.
Furqan Zahoor, Arshid Nisar, Usman Isyaku Bature, Haider Abbas, Faisal Bashir, Anupam Chattopadhyay, Brajesh Kumar Kaushik, Ali Alzahrani, Fawnizu Azmadi Hussin   +8 more
openaire   +2 more sources

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

, 2011
This report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array
Koeng Su Lim, Jung Won Seo, Seung Jae Baik, Sang Jung Kang   +3 more
core   +1 more source

Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films

Advanced Materials, EarlyView.
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford, Anne Flechsig, Shilei Ding, Emir Karadža, Niklas Kercher, Tobias Goldenberger, Elisabeth Müller, Pietro Gambardella, Laura J. Heyderman, Aleš Hrabec   +9 more
wiley   +1 more source