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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Materials Science and Engineering Reports, 2014
F Pan, Cheng Song, Fei Zeng
exaly  

Resistive switching phenomena for resistive random access memory applications

2013
The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easily fabricated in less stringent environments.
openaire   +1 more source

An overview of materials issues in resistive random access memory

Journal of Materiomics, 2015
Linggang Zhu, Jian Zhou, Zhonglu Guo
exaly  

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