Results 131 to 140 of about 14,908,555 (316)
Sol-Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks. [PDF]
Nanomaterials (Basel), 2023 Lee T +9 more
europepmc +1 more source
Advanced Materials, EarlyView.Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
Materials Research Letters, 2019 The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the ...
Gang Niu +16 more
doaj +1 more source
Advanced Materials, EarlyView.A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung +9 more
wiley +1 more source
Resistive random access memory based on organic-metallic hybrid polymer [PDF]
Resistive random access memories (ReRAMs) based on an organic-metallic hybrid polymer, Poly(Fe-btpyb) Purple, were fabricated. This material was synthesized by complexation of metal ions and organic ligands.
40500195 +6 more
core +1 more source
Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films
Advanced Materials, EarlyView.ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford +9 more
wiley +1 more source
A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory. [PDF]
Materials (Basel), 2022 Chung H, Shin H, Park J, Sun W.
europepmc +1 more source
Giant Orbital Rashba–Edelstein Effect in Crystalline Cu2O/Cu Heterostructures
Advanced Materials, EarlyView.An enhanced orbital Rashba–Edelstein effect is demonstrated in a crystalline Cu2O/Cu heterostructure, compared to naturally oxidized CuOx structures, highlighting the critical role of crystallinity and interface control in orbital torque generation. The resulting spin torque conductivity exceeds that of Pt, indicating the potential of orbital torque ...
San Ko +10 more
wiley +1 more source
Can Elastomers Combine Stiffness, Toughness and Fatigue Resistance?
Advanced Materials, EarlyView.This review studies how the molecular and macroscopic architecture of elastomers influence their mechanical properties including: stiffness, stretchability, toughness, fatigue resistance, and damping behavior. By linking the structure to performance, it proposes design principles for advanced elastomeric systems that combine mechanical properties ...
Eva Baur, Esther Amstad
wiley +1 more source
Neural computing in random resistive memory
Recent years have witnessed a growing interest in artificial intelligence and internet of things, both of which demand ever-increasing efficiency and computational power due to the rapid expand of data volume and model size.
王少聪, Wang, Shaocong
core