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Resistive switching phenomena for resistive random access memory applications
2013The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easily fabricated in less stringent environments.
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Characteristics and mechanisms in resistive random-access memory
2020Tuo Shi, Qi Liu
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An overview of materials issues in resistive random access memory
Journal of Materiomics, 2015Linggang Zhu, Jian Zhou, Zhonglu Guo
exaly

