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(Invited) Environmental Resistance of Resistive Random Access Memory
ECS Meeting Abstracts, 2016Environmental resistance of memory devices must be clarified for putting them into practical use. This should be emphasized in particular for resistance random access memory (ReRAM), which switching mechanism is still unclear, because responses to environmental stresses are closely related to the mechanism.
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Optoelectronic resistive random access memory for neuromorphic vision sensors
Nature Nanotechnology, 2019Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, memory and processing units presents serious challenges in terms of device integration and power consumption.
Feichi Zhou +10 more
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A compact model of hafnium-oxide-based resistive random access memory
Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), 2013In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations. Simple I-V measurements are used to extract the model parameters.
PUGLISI, Francesco Maria +3 more
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Resistive Random Access Memory: A Review of Device Challenges
IETE Technical Review, 2019With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device.
Varshita Gupta +3 more
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GMRAM: giant magneto-resistance random-access memory
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484), 2002Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used
R.R. Katti, H. Kaakani
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An improved reconfigurable logic in resistive random access memory
Integration, 2022Yi Zhao +4 more
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HReRAM: A Hybrid Reconfigurable Resistive Random-Access Memory
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015Miguel Angel Lastras-Montaño +2 more
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Optimizing of Resistive Random Access Memory to Increase Its Practicability.
Science and Technology of Engineering, Chemistry and Environmental ProtectionThe progress in Integrated Circuit Technology, has promoted the development of emerging technologies like AI and Iot. It also requires the memory technology a high standard. Resistive random-access memory (RRAM) has the advantages of lower power consumption, fast speed and owns a strong compressibility, and it is regarded as the most promising NVM in ...
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