Results 121 to 130 of about 14,908,555 (316)

Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout

IEEE Open Journal of Nanotechnology
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct ...
Roopesh Singh, Shivam Verma
doaj   +1 more source

A hardware Markov chain algorithm realized in a single device for machine learning

Nature Communications, 2018
Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian, Xue-Feng Wang, Mohammad Ali Mohammad, Guang-Yang Gou, Fan Wu, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

Azobenzene's Cross‐Scale Optics and Photonics: Molecular Photoswitching, Mesoscopic Material Motions, and Adaptive Devices

Advanced Materials, EarlyView.
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son, Soyul Kwak, Heerin Noh, Minsang Kim, Doyeon Noh, Subhayan Chakraborty, Jaewon Lee, YongDeok Cho, Kyeongsoo Kim, Taewoong Eom, Moonyoung Kim, Jangwon Kim, Hoyoung Lee, Soyoung Lee, Jaehun Kim, Grace G. D. Han, Shin‐Tson Wu, Stefano Oscurato, Arri Priimagi, Marina Saphiannikova, Seungwoo Lee   +20 more
wiley   +1 more source

Radiation Effects of Commercial Resistive Random Access Memories [PDF]

, 2014
We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets.
Roche, Nicolas, Berg, Melanie, Figueiredo, Marco, Buchner, Stephen, Khachatrian, Ani, Phan, Anthony, Kim, Hak, LaBel, Kenneth A., Chen, Dakai, Wilcox, Edward   +9 more
core  

Structural analysis of anodic porous alumina used for resistive random access memory

Science and Technology of Advanced Materials, 2010
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect.
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
doaj  

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Electrical properties of NiO bipolar Resistive Random Access Memory (RRAM)

, 2013
本論文，我們利用熱蒸鍍法在P-type 矽基板上，度上一層鎳薄膜。將其放入高溫爐氧化，形成氧化鎳薄膜，並利用鋁，做為此結構的上電極，使用AFM以及XRD分析其表面結構以及晶格結構。 本研究分別針對，氧化溫度與氧氣流量此兩種變因，對此結構的雙極電阻式記憶體性質做分析討論。 實驗結果顯示，在提高氧化溫度下，高阻態與低組態的電阻值會隨者溫度上升而上升；在提高流量之下，高阻態與低組態的電阻值會隨者流量上升而下降。而另外粗糙度的提升，會使元件的電阻轉換性質變得更穩定 ...
Chen, Chan-Cheng, 陳展承
core  

Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models

Nature Communications
Compute-in-memory based on resistive random-access memory has emerged as a promising technology for accelerating neural networks on edge devices. It can reduce frequent data transfers and improve energy efficiency.
Wenshuo Yue, Kai Wu, Zhiyuan Li, Juchen Zhou, Zeyu Wang, Teng Zhang, Yuxiang Yang, Lintao Ye, Yongqin Wu, Weihai Bu, Shaozhi Wang, Xiaodong He, Xiaobing Yan, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang   +16 more
doaj   +1 more source

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source