Results 91 to 100 of about 15,800,199 (248)
Multistate resistive switching in silver nanoparticle films
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Here, we develop a high‐throughput algorithm that accelerates the elucidation of phase diagrams of topological spin textures using limited computational resources at high numerical accuracy. Applying this framework to the van der Waals magnet CrSBr, we unveiled a hierarchy of previously unknown topological textures (domain‐wall bimerons, bimeron chains,
Andrew Lyall +4 more
wiley +1 more source
Conductance quantization in resistive random access memory
, 2021 The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Liu, Ming +8 more
core
Quantum Dots for Resistive Switching Memory and Artificial Synapse
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
doaj +1 more source
AIP Advances, 2017 A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory.
R. Aluguri +3 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong +5 more
wiley +1 more source
Magneto‐Ionic Devices With Polymer‐Based Electrolytes
Advanced Functional Materials, EarlyView.Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler +3 more
wiley +1 more source
Advancements Towards Single Site Information Storage and Processing Using HfO2 Resistive Random Access Memory (ReRAM) [PDF]
, 2013 Resistive Random Access Memory (ReRAM) has attracted much attention among researchers due to its fast switching speeds, lower switching voltages, and feasible integration into industry compatible CMOS processing. These characteristics make ReRAM a viable
Hovish, Michael Quinlan
core +1 more source
Stoichiometry and volume dependent transport in lithium ion memristive devices
AIP Advances, 2018 LixCoO2, a thoroughly studied cathode material used extensively in Li-ion rechargeable batteries, has recently been proposed as a potential candidate for resistive random access memory and neuromorphic system applications.
Charis M. Orfanidou +8 more
doaj +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
Advanced Functional Materials, EarlyView.The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
wiley +1 more source