Results 91 to 100 of about 14,908,555 (316)
A versatile compact model of resistive random-access memory (RRAM) [PDF]
We present a versatile compact model for resistive random-access memory (RRAM) that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM).
Salahuddin, Sayeef +3 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory
IEEE Access, 2019 In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga2O3 film.
Chih-Chiang Yang +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source
Conductance quantization in resistive random access memory
, 2021 The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Liu, Ming +8 more
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Advancements Towards Single Site Information Storage and Processing Using HfO2 Resistive Random Access Memory (ReRAM) [PDF]
, 2013 Resistive Random Access Memory (ReRAM) has attracted much attention among researchers due to its fast switching speeds, lower switching voltages, and feasible integration into industry compatible CMOS processing. These characteristics make ReRAM a viable
Hovish, Michael Quinlan
core +1 more source
ACS Applied Materials and Interfaces, 2020 Interface-driven multifunctional facets are gearing up in the field of science and technology. Here, we present the interface-activated resistive switching (RS), negative differential resistance, diode behavior, and ultraviolet (UV) light sensing in ...
A. Kumari +6 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi +8 more
wiley +1 more source
Optically readable resistive random access memory in silicon plasmonics platform
, 2014 We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles.
Shappir, J +7 more
core