Results 71 to 80 of about 14,908,555 (316)
A Finite Element Model for Bipolar Resistive Random Access Memory
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects.
Choi, Woo Young +4 more
core +1 more source
March AB, March AB1: new March tests for unlinked dynamic memory faults [PDF]
Among the different types of algorithms proposed to test static random access memories (SRAMs), March tests have proven to be faster, simpler and regularly structured. New memory production technologies introduce new classes of faults usually referred to
Di Natale, Giorgio +9 more
core +1 more source
Carbon-based memristors for resistive random access memory and neuromorphic applications
As a typical representative of nanomaterials, carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties, multi-dimensionality, multi-hybridization methods ...
Fan Yang +5 more
doaj +1 more source
Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj +1 more source
Intracerebral Hemorrhage Induces Monocyte TNF Signaling in Patients That Is Suppressed by BAF312
ABSTRACT Objective Intracerebral hemorrhage (ICH) causes high morbidity and mortality, with neurotoxic inflammation driven by infiltrating monocytes. This study is an in‐depth longitudinal examination of the immune response during the first week of ICH in the presence and absence of the immunomodulatory drug BAF312 (Siponimod).
Jonathan Howard DeLong +10 more
wiley +1 more source
Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel ...
Wang, Dawei +7 more
core +1 more source
Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance.
Gang Cao +5 more
doaj +1 more source
Smart healthcare devices, which interacts with the human body by recording, analyzing and processing physiological signals, need soft and biocompatible electronics. Here, Son et al. report a self-healable and stretchable resistive switching random-access
Jinhong Park +10 more
doaj +1 more source
Building machine‐readable vocabularies for materials science is slow, expert‐driven work. This study benchmarks 13 large language models on two of its first steps: finding candidate terms in engineering articles and deciding where they belong in a class hierarchy.
Thomas Bjarsch +3 more
wiley +1 more source
Supporting AI Readiness Through Digital Workflows in Materials Science
Digitalization drives innovation in materials science by connecting data silos and turning heterogeneous processes into reusable research pipelines. Across 13 MaterialDigital projects, digital workflows reveal complementary pathways toward AI‐ready materials research, founded on structured data, persistent artifacts, executable orchestration, and ...
Marian Bruns +67 more
wiley +1 more source

