Results 71 to 80 of about 3,470 (154)

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Nature Communications, 2019
Resistive random-access memory is operated based on the formation and disruption of nanoscale conductive filaments, but a mechanistic understanding of this process remains unclear. Here, Wang et al.
Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini   +7 more
doaj   +1 more source

Sol-Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks. [PDF]

Nanomaterials (Basel), 2023
Lee T, Kim HI, Cho Y, Lee S, Lee WY, Bae JH, Kang IM, Kim K, Lee SH, Jang J.   +9 more
europepmc   +1 more source

Structural analysis of anodic porous alumina used for resistive random access memory

Science and Technology of Advanced Materials, 2010
Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect.
Jeungwoo Lee, Seisuke Nigo, Yoshihiro Nakano, Seiichi Kato, Hideaki Kitazawa and Giyuu Kido
doaj  

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Materials Research Letters, 2019
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the ...
Gang Niu, Pauline Calka, Peng Huang, Sankaramangalam Ulhas Sharath, Stefan Petzold, Andrei Gloskovskii, Karol Fröhlich, Yudi Zhao, Jinfeng Kang, Markus Andreas Schubert, Florian Bärwolf, Wei Ren, Zuo-Guang Ye, Eduardo Perez, Christian Wenger, Lambert Alff, Thomas Schroeder   +16 more
doaj   +1 more source

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing. [PDF]

Discov Nano, 2023
Zahoor F, Hussin FA, Isyaku UB, Gupta S, Khanday FA, Chattopadhyay A, Abbas H.   +6 more
europepmc   +1 more source

Resistance random access memory

Materials Today, 2016
Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Sze, Simon M.   +4 more
openaire   +1 more source

First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices. [PDF]

Nanomaterials (Basel), 2023
Chen KH, Cheng CM, Wang NF, Hung HW, Li CY, Wu S.   +5 more
europepmc   +1 more source

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing

Chemical Reviews
In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation.
Ielmini, Daniele, Pedretti, Giacomo
openaire   +2 more sources

Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory. [PDF]

Polymers (Basel), 2022
Yun J, Kim D.
europepmc   +1 more source

Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides. [PDF]

Micromachines (Basel), 2022
Xie H, Hu J, Wang Z, Hu X, Liu H, Qi W, Zhang S.   +6 more
europepmc   +1 more source