Results 31 to 40 of about 14,870,547 (146)

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices.
Matteo Galetta   +9 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

An efficient read approach for memristive crossbar array

open access: yesMemories - Materials, Devices, Circuits and Systems, 2023
Resistive random access memories (ReRAM) have drawn attention of researchers due to their unique properties with applications in in-memory computing, which allows storage and computation in the same unit.
Pravanjan Samanta   +3 more
doaj   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

open access: yesAdvanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald   +3 more
wiley   +1 more source

Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films

open access: yes, 2017
We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiOx/GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor ...
Yoon, Chansoo   +19 more
core   +1 more source

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

open access: yesAdvanced Electronic Materials
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan   +2 more
doaj   +1 more source

An Energy-Efficient Digital ReRAM-Crossbar-Based CNN With Bitwise Parallelism

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017
There is great attention to develop hardware accelerator with better energy efficiency, as well as throughput, than GPUs for convolutional neural network (CNN). The existing solutions have relatively limited parallelism as well as large power consumption
Leibin Ni   +3 more
doaj   +1 more source

Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain‐Inspired Computing

open access: yesAdvanced Science, EarlyView.
In this work, we demonstrated a robust 2D MoS2 based iontronic memtransistor of planar architecture operated under the influence of an electrical double layer with versatile performance and applications, including pinched hysteresis nature of transfer curve, analogue channel conductance tuning, low‐voltage operation, logic‐gate operation, classical ...
Puranjay Saha   +2 more
wiley   +1 more source

Demonstration of transfer learning using 14 nm technology analog ReRAM array

open access: yesFrontiers in Electronics
Analog memory presents a promising solution in the face of the growing demand for energy-efficient artificial intelligence (AI) at the edge. In this study, we demonstrate efficient deep neural network transfer learning utilizing hardware and algorithm co-
Fabia Farlin Athena   +45 more
doaj   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

open access: yesAdvanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park   +8 more
wiley   +1 more source

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