Results 31 to 40 of about 15,800,744 (205)

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

Electronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

ARIA: Additive ReRAM-Based Integrity and Aging Monitoring for ICs

IEEE Access
This paper reports an approach for monitoring aging and integrity of CMOS circuits through additively manufactured Resistive Random-Access Memory (ReRAM) based test structures.
Thomas Schultz, Rashmi Jha, Brian Dupaix, Matt Casto   +3 more
doaj   +1 more source

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

, 2014
The dependence of reactive metal layer on resistive switching characteristics is investigated in a bi-layer structural Ta/HfOx filament type resistive random access memory (ReRAM).
Hwang, H, Park, S, Lee, D, Woo, J, Lee, S, Cha, E, Euijun Cha, Hyunsang Hwang, Sangheon Lee, Sangsu Park, Jiyong Woo, Daeseok Lee   +11 more
core   +1 more source

Control over variability in nonvolatile hafnium-oxide resistive-switching memory based on modeling of the switching processes [PDF]

, 2013
Resistive random access memory (ReRAM) technology presents an attractive option for embedded non-volatile (NV) memory systems if its variability (cycle-to-cycle and device-to-device) can be controlled.
Butcher, Brian Jerad
core   +1 more source

ReGra: Accelerating Graph Traversal Applications Using ReRAM With Lower Communication Cost

IEEE Access, 2020
There is a growing gap between data explosion speed and the improvement of graph processing systems on conventional architectures. The main reason lies in the large overhead of random access and data movement, as well as the unbalanced and unordered ...
Haoqiang Liu, Qiang-Sheng Hua, Hai Jin, Long Zheng   +3 more
doaj   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices.
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
doaj   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

An efficient read approach for memristive crossbar array

Memories - Materials, Devices, Circuits and Systems, 2023
Resistive random access memories (ReRAM) have drawn attention of researchers due to their unique properties with applications in in-memory computing, which allows storage and computation in the same unit.
Pravanjan Samanta, Dev Narayan Yadav, Partha Pratim Das, Indranil Sengupta   +3 more
doaj   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

, 2016
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge ...
Kim, Tae-Hyun, Venkatachalam, Dinesh, Belay, Kidane, Nawaz (Saleh), Muhammad, Karouta, Fouad, Elliman, Robert   +5 more
core   +1 more source