Results 51 to 60 of about 15,800,744 (205)
A Novel ReRAM-Based Architecture of Field Sequential Color Driver for High-Resolution LCoS Displays
IEEE Access, 2020 Liquid crystal on-silicon (LCoS) display is one of the most representative micro-display technologies, and is widely adopted in virtual reality (VR) and augmented reality (AR) devices thanks to a relatively simple structure using a semiconductor ...
Youngsun Han, Dongmin Kim, Yongtae Kim
doaj +1 more source
Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching
Advanced Electronic Materials, 2023 Advanced resistive random‐access memory (ReRAM) devices based on resistive switching (RS) have been intensely studied for future high‐density nonvolatile memory devices owing to their high scalability, simplified integration, fast operation, and ultralow
SunHwa Min +7 more
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Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Stable switching of resistive random access memory on the nanotip array electrodes [PDF]
, 2016 The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external ...
Ke, Jr-Jian +6 more
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The nature of column boundaries in micro-structured silicon oxide nanolayers
APL Materials, 2021 Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers.
K. Patel +6 more
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Advanced Electronic Materials, EarlyView.1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
Nonlinear Dynamics and Invariants of Motion in ReRAM Cells
Advanced Electronic Materials, EarlyView.A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco +5 more
wiley +1 more source
Verification of In-Memory Logic Design using ReRAM Crossbars
, 2023 Resistive Random Access Memory (ReRAM) technologies enable the development of innovative architectures for in-memory computing. Many logic design styles, like Imply, Magic or Majority, have been explored for mapping Boolean functions to ReRAM crossbars ...
Deb, Arighna +5 more
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Journal of Science: Advanced Materials and DevicesHalide perovskites (HPs) have been recognized as promising materials for next-generation non-volatile memories, particularly resistive random-access memory (ReRAM).
Geon Kim +5 more
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Advanced Electronic Materials, EarlyView.Memristors, nanoscale devices that compute and store data in the same place, promise compact, energy‐efficient image‐processing hardware, yet no two devices behave exactly alike. Simulations based on real device measurements show that a 256‐cell memristive cellular nonlinear network (M‐CellNN) detects image edges perfectly despite this variability and ...
Salwa Yasmeen Neyaz +10 more
wiley +1 more source