Results 51 to 60 of about 462 (165)

Resistive Random-Access Memory (ReRAM) Circuit Design Optimization

Academic Journal of Science and Technology
With the fast development and broad application of artificial intelligence, mobile terminals, and autonomous driving, the advanced System-on-Chip (SoC) design faces unprecedented memory demand, especially under the two core requirements for High-Density Integration and Low-Power Operation. Under such circumstances, Resistive Random-Access Memory (RRAM)
openaire   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, Volume 36, Issue 52, 29 June 2026.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays

AIP Advances
In this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo, June Hyuk Lee, Min Kyu Yang   +2 more
doaj   +1 more source

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

, 2019
Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high switching speed, excellent scalability, and low power consumption together with accessible ...
openaire   +1 more source

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

InfoMat, Volume 8, Issue 6, June 2026.
Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma, Aniruddha Mondal   +7 more
wiley   +1 more source

Electrochemical Memristive Devices Toward Brain‐Inspired Computing and In‐Memory Communication: Mechanisms, Materials, and Device Engineering

ChemElectroChem, Volume 13, Issue 9, 5 May 2026.
Electrochemical memristive devices, whose resistance is modulated by ion migration and redox reactions, offer a hardware pathway toward brain‐inspired computing. This review summarizes key switching mechanisms—electrochemical metallization (ECM), valence change mechanism (VCM), and thermochemical effects (TCM)—and discusses how materials and device ...
Junyao Xu, Yiwei Sun
wiley   +1 more source

Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method

Micromachines, 2019
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli, Marie Blandine Martin, Louiza Hamidouche, Alberto Montanaro, Aikaterini-Flora Trompeta, Costas A. Charitidis   +5 more
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, Volume 36, Issue 31, 16 April 2026.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

High-Performance Resistance-Switchable Multilayers of Graphene Oxide Blended with 1,3,4-Oxadiazole Acceptor Nanocomposite

Micromachines, 2019
Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory ...
Lei Li, Guangming Li
doaj   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

Advanced Functional Materials, Volume 36, Issue 34, 27 April 2026.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane, Abhinav Gorthy, Luyao Zheng, Chiranth C Ravi, Haodong Wu, Jiamao Zheng, Neela H. Yennawar, Shashank Priya, Rashmi Jha, Bed Poudel   +9 more
wiley   +1 more source