Results 51 to 60 of about 14,870,547 (146)

Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching

Advanced Electronic Materials, 2023
Advanced resistive random‐access memory (ReRAM) devices based on resistive switching (RS) have been intensely studied for future high‐density nonvolatile memory devices owing to their high scalability, simplified integration, fast operation, and ultralow
SunHwa Min, Da Seul Hyeon, Gabriel Jang, Jisoo Choi, Jeongwoo Seo, Soyeong Kwon, Dong‐Wook Kim, Jin Pyo Hong   +7 more
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

, 2013
We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag electrodes. Ag/TiO2/Ag ReRAM shows unipolar switching behavior with a ramping rate of 50 mV.
Hu, Yushi, Perello, David, Kim, Miyoung, Yun, Minhee, Kwon, Deok-Hwang   +4 more
core   +1 more source

A Novel ReRAM-Based Architecture of Field Sequential Color Driver for High-Resolution LCoS Displays

IEEE Access, 2020
Liquid crystal on-silicon (LCoS) display is one of the most representative micro-display technologies, and is widely adopted in virtual reality (VR) and augmented reality (AR) devices thanks to a relatively simple structure using a semiconductor ...
Youngsun Han, Dongmin Kim, Yongtae Kim
doaj   +1 more source

The nature of column boundaries in micro-structured silicon oxide nanolayers

APL Materials, 2021
Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers.
K. Patel, J. Cottom, A. Mehonic, W. H. Ng, A. J. Kenyon, M. Bosman, A. L. Shluger   +6 more
doaj   +1 more source

Integration of Redox‐Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching

Advanced Electronic Materials, EarlyView.
Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz, Marco Moors, Tom Scherzer, Olesya Daikos, Jens Bauer, Andrea Prager, Jan Griebel, Yeji Lee, Vineeth Kumar Bandari, Thomas Blaudeck, Oliver G. Schmidt, Kirill Monakhov   +11 more
wiley   +1 more source

Lead-free all-inorganic halide perovskites for resistive switching memory: Mechanisms and emerging applications

Journal of Science: Advanced Materials and Devices
Halide perovskites (HPs) have been recognized as promising materials for next-generation non-volatile memories, particularly resistive random-access memory (ReRAM).
Geon Kim, Jongin Lee, Seong Ju Hwang, Do Yeon Heo, Jong-Hoon Kang, Hyojung Kim   +5 more
doaj   +1 more source

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

Advanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli   +5 more
wiley   +1 more source

Nonvolatile resistive switching in metal oxides for the application in resistive random access memory

, 2013
Resistive random access memory (ReRAM or memristor) based on the resistive switching (RS) has been proposed as a potential candidate for next generation nonvolatile memory with high density, fast write and erase access, low power operation, and excellent
Peng, Haiyang
core   +1 more source