Results 61 to 70 of about 462 (165)

Energy-Accuracy Trade-Offs for Resistive In-Memory Computing Architectures

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Resistive in-memory computing (IMC) architectures currently lag behind SRAM IMCs and digital accelerators in both energy efficiency and compute density due to their low compute accuracy.
Saion K. Roy, Naresh R. Shanbhag
doaj   +1 more source

Lead‐Free Bismuth Halide Perovskite Memristors: Low‐Voltage Switching and Physical Modeling of Resistive Hysteresis

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
Lead‐free bismuth halide perovskite memristors exhibit stable low‐voltage resistive switching behavior. The conductance‐activated quasi‐linear memristor model quantitatively reproduces the experimental hysteresis, confirming ion migration‐driven filament dynamics.
So‐Yeon Kim, Gonzalo Rivera‐Sierra, Bitania Shiferaw Mengesha, Benjamin Iniguez, Juan Bisquert   +4 more
wiley   +1 more source

Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration

IEEE Access
Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing.
Xiaohua Liu, Yang Chen, Nils Kopperberg, Oliver Solfronk, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser, Stefan Wiefels   +7 more
doaj   +1 more source

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Advanced Physics Research
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj   +1 more source

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Journal of Materiomics, 2018
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu, Lai-Mun Wong, Shijie Wang, Kaiyang Zeng   +3 more
doaj   +1 more source

Honey-ReRAM Enabled Sustainable Edge AI System for IoT Applications

IEEE Access
This paper is toward a promising solution to address the environmental sustainability challenge in computing by building brain-inspired and green non-Von Neumann systems with Resistive Random-Access Memory (ReRAM) made from natural organic materials ...
Jinhui Wang, Feng Zhao, Mohammad Rafeeq Khan, Md. Mehedi Hasan Tanim, Zoe Templin, Harshvardhan Uppaluru   +5 more
doaj   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen   +3 more
doaj   +1 more source

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Scientific Reports, 2017
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating
Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang   +5 more
doaj   +1 more source

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang, Mengxin Zheng, Shengyu Fan, Qian Lou, Rui Hou, Dan Meng, Mingzhe Zhang   +6 more
doaj   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials
No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance.
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
doaj   +1 more source