Results 61 to 70 of about 14,870,547 (146)

A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
This paper presents a ferroelectric FET (FeFET)-based processing-in-memory (PIM) architecture to accelerate the inference of deep neural networks (DNNs).
Yun Long, Daehyun Kim, Edward Lee, Priyabrata Saha, Burhan Ahmad Mudassar, Xueyuan She, Asif Islam Khan, Saibal Mukhopadhyay   +7 more
doaj   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

Advanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad, Solomon Amsalu Chekol, Julius Rasbach, Susanne Hoffmann‐Eifert, Stephan Menzel   +4 more
wiley   +1 more source

Origin, verification, and device‐level impacts of p‐doping in two‐dimensional transition metal dichalcogenides

InfoMat, EarlyView.
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han, Hye In Choi, Ji Yeon Kim, Wenhu Shen, Yong Soo Cho   +4 more
wiley   +1 more source

Surface-Controlled Metal Oxide Resistive Memory [PDF]

, 2015
To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied.
Duran Retamal, Jose Ramon, Ke, Jr-Jian, Wei, Tzu-Chiao, Namura, Kyoko, Minamitake, Haruhiko, Tsai, Dung-Sheng, Suzuki, Motofumi, Ho, Chin-Hsiang, He, Jr-Hau, Lin, Chun-Ho   +9 more
core   +1 more source

Nanoparticles-array-air spacer passivated memristor with high on/off ratio and low reset current density

Nano Research
Non-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing.
Dong Li, Yawen Wang, Wanyu Lu, Xinpeng Wang, Chang Liu, Haseeb Ur Rehman, Bo Zhao, Weijing Shao, Yu Wang, Oleksandr Ivasenko, Yinghui Sun, Yandong Wang, Lin Jiang   +12 more
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles [PDF]

, 2016
The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN).
Arita, Masashi, Ohno, Yuuki, Murakami, Yosuke, Takamizawa, Keisuke, Takahashi, Yasuo, Tsurumaki-Fukuchi, Atsushi   +5 more
core   +1 more source

GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays

AIP Advances
In this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo, June Hyuk Lee, Min Kyu Yang   +2 more
doaj   +1 more source

Resistive Random-Access Memory (ReRAM) Circuit Design Optimization

Academic Journal of Science and Technology
With the fast development and broad application of artificial intelligence, mobile terminals, and autonomous driving, the advanced System-on-Chip (SoC) design faces unprecedented memory demand, especially under the two core requirements for High-Density Integration and Low-Power Operation. Under such circumstances, Resistive Random-Access Memory (RRAM)
openaire   +1 more source

Bio‐Compatible Flexible Memristive Devices Enabled by BNNT/MWCNT–ZnO Quantum Dot Hybrid Percolation Networks

Small, EarlyView.
BNNT rods incorporated into MWCNT–ZnO quantum dot networks regulate charge transport and suppress leakage in flexible, transparent resistive memory devices. The resulting hybrid architecture preserves nonvolatile switching under static bending and after low‐temperature exposure and subcutaneous implantation.
Jaeho Shim, Dong Gwon Heo, Seonghwan Oh, Jinseo Park, Seok‐Ho Seo, Juhee You, Yuwen Wei, Whan Kim, Inseok Seo, Jinseok Kim, Donghee Park, Dong Ick Son   +11 more
wiley   +1 more source