Results 81 to 90 of about 15,800,744 (205)

Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method

Micromachines, 2019
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli, Marie Blandine Martin, Louiza Hamidouche, Alberto Montanaro, Aikaterini-Flora Trompeta, Costas A. Charitidis   +5 more
doaj   +1 more source

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

Advanced Science, Volume 13, Issue 61, 3 November 2026.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park, Jiseong Im, Yeongheon Yang, Ryun‐Han Koo, Jonghyun Ko, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

, 2009
This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM).
Kim, H, Yun, DJ, Yong, K, Rhee, SW, Lee, S, Kijung Yong, Dong-Jin Yun, Heejin Kim, Shi-Woo Rhee, Seunghyup Lee   +9 more
core   +1 more source

Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration

IEEE Access
Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing.
Xiaohua Liu, Yang Chen, Nils Kopperberg, Oliver Solfronk, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser, Stefan Wiefels   +7 more
doaj   +1 more source

Impact of Electrical Testing Strategies on the Performance Metrics of Bio-organic-Based Resistive Switching Memory

Resistive Random-Access Memory (ReRAM) is considered as one of the most promising non-volatile memory technologies because of its high scalability, fast switching speed, and low power consumption.
Cheong, Kuan Yew, Shafiq, Mohamad Danial, Leong, Hao Zhe, Zhao, Feng, Othman, Nadras, Awais, Muhammad   +5 more
core   +1 more source

Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles [PDF]

, 2016
The switching operation of a Cu/MoOx/TiN resistive random access memory (ReRAM) device was investigated using in situ transmission electron microscopy (TEM), where the TiN surface was slightly oxidized (ox-TiN).
Arita, Masashi, Ohno, Yuuki, Murakami, Yosuke, Takamizawa, Keisuke, Takahashi, Yasuo, Tsurumaki-Fukuchi, Atsushi   +5 more
core   +1 more source

Exploring resistive memory technologies for re-configurable logic application [PDF]

, 2018
Reconfigurable logic application is a computer architecture combining some of the flexibility of software with the high performance of hardware by processing with very flexible high speed computing fabrics like field-programmable gate arrays (FPGAs). The
Fahima Mahzabin Chowdhury
core  

Understanding the trade-offs in multi-level cell ReRAM memory design

, 2013
Resistive Random Access Memory (ReRAM) is one of the most promising emerging memory technologies as a potential replacement for DRAM memory and/or NAND Flash. Multi-level cell (MLC) ReRAM, which can store multiple bits in a single ReRAM cell, can further
Cong Xu, Muralimanohar, Naveen, Naveen Muralimanohar, Niu, Dimin, Yuan Xie, Xie, Yuan, Jouppi, Norman P., Norman P. Jouppi, Dimin Niu, Xu, Cong   +9 more
core   +1 more source

Resistive random access memories (ReRAM) with modified electrodes

, 2020
Τhe design, implementation and characterization of Resistive Random Access Memories (ReRAM) devices with variable electrodes for various types of insulating material have been extensively studied.
Karakolis, Panagiotis, Καρακόλης, Παναγιώτης, Παναγιώτης Καρακόλης   +2 more
core   +1 more source

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

, 2018
The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed,
Hwang, H, Lee, D, Woo, J, Park, J, Lee, S, Cha, E   +5 more
core   +1 more source