Results 81 to 90 of about 14,870,547 (146)

Fault Analysis And Test For Bridge Defect In Resistive Random Access Memory [PDF]

, 2016
Resistive Random-Access Memory (ReRAM) is one of the potential candidates of emerging semiconductor memory to replace the conventional memory technologies.Besides, ReRAM offers many attractive advantages, such as non-volatile, scalable, low power ...
Arshad, Norsuhaidah
core   +1 more source

Energy-Accuracy Trade-Offs for Resistive In-Memory Computing Architectures

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Resistive in-memory computing (IMC) architectures currently lag behind SRAM IMCs and digital accelerators in both energy efficiency and compute density due to their low compute accuracy.
Saion K. Roy, Naresh R. Shanbhag
doaj   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Polymer-Assisted Solution Processing of TiO2 Thin Films for Resistive-Switching Random Access Memory

, 2017
In this study, we present a polymer-assisted solution (PAS) process to prepare TiO2 electrolyte layers for resistive-switching random access memory (ReRAM). The PAS process utilizes the stability of metal-polymer complexes in the coating solution to form
Kim, Jihoon, Vishwanath, Sujaya Kumar, Jeon, Sanghun   +2 more
core   +1 more source

Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration

IEEE Access
Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing.
Xiaohua Liu, Yang Chen, Nils Kopperberg, Oliver Solfronk, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser, Stefan Wiefels   +7 more
doaj   +1 more source

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

, 2021
Highly repeatable, photosensitive nonvolatile resistive random access memory (ReRAM) made of a Si/SiO2/Cu/PRPC/Ta stack with a photoresponsive polymer composite (PRPC) as the active medium is presented.
S. N. Piramanayagam, Piramanayagam, S. N., Rawat, Rajdeep Singh, Deen, Ghulam Roshan, Bipul Kumar Mahato, Rajdeep Singh Rawat, Medwal, Rohit, Mahato, Bipul Kumar, Rohit Medwal, Ghulam Roshan Deen   +9 more
core   +1 more source

Maximum Achievable Rate of Resistive Random-Access Memory Channels by Mutual Information Spectrum Analysis [PDF]

The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and identically ...
Immink, Kees A. Schouhamer, Cai, Kui, Li, Ying, Song, Guanghui   +3 more
core   +1 more source

Energetic Behavior of Resistive Random-Access Memory Cells [PDF]

, 2016
In order to investigate the switching characteristics of Resistive Random Access Memory cells (ReRAM) in terms of their thermodynamic free energy properties, we need to build a number of models that replicate the system.
Bisbee, Christopher M
core   +2 more sources

Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

, 2016
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge ...
Kim, Tae-Hyun, Venkatachalam, Dinesh, Belay, Kidane, Nawaz (Saleh), Muhammad, Karouta, Fouad, Elliman, Robert   +5 more
core   +1 more source

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Advanced Physics Research
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj   +1 more source