Resistive random access memory reram

Results 91 to 100 of about 14,870,547 (146)

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Journal of Materiomics, 2018
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
doaj +1 more source

Multi-scale modeling of resistive random access memories (ReRAM)

, 2018
Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'
Guitarra, Silvana Raquel
core

Honey-ReRAM Enabled Sustainable Edge AI System for IoT Applications

IEEE Access
This paper is toward a promising solution to address the environmental sustainability challenge in computing by building brain-inspired and green non-Von Neumann systems with Resistive Random-Access Memory (ReRAM) made from natural organic materials ...
Jinhui Wang +5 more
doaj +1 more source

Total Ionizing Dose Test Report for the MB85AS4MT ReRAM [PDF]

, 2017
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Random Access Memory (ReRAM)
LaBel, Kenneth, Chen, Dakai, Wilcox, Edward +2 more
core

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang +3 more
doaj +1 more source

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Scientific Reports, 2017
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating
Jaehyuk Park +5 more
doaj +1 more source

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang +6 more
doaj +1 more source

Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N‑Containing Heteroaromatic Semiconductors

In organic resistive random-access memory (ReRAM) devices, deeply understanding how to control the performance of π-conjugated semiconductors through molecular-shape-engineering is important and highly desirable.
Cheng Zhang (70708) +10 more
core +1 more source

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

, 2018
This paper reports a resistive switching device of Au/ZnO/stainless steel (SS) and its applicability as a flexible resistive random access memory (ReRAM).
Kim, H, Yun, DJ, Yong, K, Rhee, SW, Lee, S +4 more
core +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials
No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance.
Imtiaz Hossen +7 more
doaj +1 more source

reram
resistive switching
7. clean energy

memristor
resistive random access memory
compression

a1
deep learning