Results 91 to 100 of about 15,800,744 (205)
Pulse-induced resistive and capacitive switching in TiO2 ReRAM
In this study, we provide the experimental evidence of the coexistence of resistive and capacitive features in nanoscale TiO2 based solid state Resistive Random Access Memory (ReRAM). Biasing the devices with voltage sweeps exhibits non-zero crossing I-V
Khiat, A. +3 more
core +1 more source
Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide
Advanced Physics ResearchUltralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj +1 more source
Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
doaj +1 more source
Oxide defect engineering methods for valence change (VCM) resistive random access memories [PDF]
, 2014 Electrical switching requirements for resistive random access memory (ReRAM) devices are multifaceted, based on device application. Thus, it is important to obtain an understanding of these switching properties and how they relate to the oxygen vacancy ...
Capulong, Jihan Ocampo
core +1 more source
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices [PDF]
, 2019 Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed operation, the high density CMOS-compatible integration, and the high cycling endurance, the ...
Ambrosi E. +3 more
core +1 more source
Honey-ReRAM Enabled Sustainable Edge AI System for IoT Applications
IEEE AccessThis paper is toward a promising solution to address the environmental sustainability challenge in computing by building brain-inspired and green non-Von Neumann systems with Resistive Random-Access Memory (ReRAM) made from natural organic materials ...
Jinhui Wang +5 more
doaj +1 more source
Scientific Reports, 2017 NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating
Jaehyuk Park +5 more
doaj +1 more source
CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications
Advanced Electronic MaterialsHfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang +3 more
doaj +1 more source
Non-volatile SRAM memory cells based on ReRAM technology
, 2020 International audienceStatic Random-Access Memories (SRAMs) are very common in today's chip industry due to their speed and power consumption but are classified as volatile memories. Non-Volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility.
Aziza, Hassen +3 more
core +1 more source
Maximum Achievable Rate of Resistive Random-Access Memory Channels by Mutual Information Spectrum Analysis [PDF]
The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and identically ...
Immink, Kees A. Schouhamer +3 more
core +1 more source