Results 111 to 120 of about 14,870,547 (146)

Update Disturbance‐Resilient Analog ReRAM Crossbar Arrays for In‐Memory Deep Learning Accelerators

Resistive memory (ReRAM) technologies with crossbar array architectures hold significant potential for analog AI accelerator hardware, enabling both in‐memory inference and training.
Donato Francesco Falcone, Stecconi, Tommaso, Bragaglia, Valeria, Linares-Barranco, Bernabé, Matteo Galetta, Ram, Mamidala Saketh, Horst, Folkert, Reidt, Steffen, Matias Senger, Bernabe Linares‐Barranco, Valeria Bragaglia, Falcone, Donato Francesco, Folkert Horst, Ralph Heller, Daniel Jubin, Offrein, Bert Jan, Choi, Wooseok, Marilyne Sousa, La Porta, Antonio, Zaccaria, Elisa, Porta, Antonio La, Jubin, Daniel, Antonio La Porta, Steffen Reidt, Galetta, Matteo, Clerico, Victoria, Sousa, Marilyne, Bert Jan Offrein, Linares\u2010Barranco, Bernabe, Senger, Matias, Wooseok Choi, Victoria Clerico, Heller, Ralph, Mamidala Saketh Ram, Tommaso Stecconi, Elisa Zaccaria   +35 more
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Defect-oriented test and design-for-testability technique for resistive random access memory

, 2015
Resistive Random Access Memory (ReRAM) is one of the main emerging memories that has great potential to replace existing semiconductor memories. However, it cannot be denied that ReRAM prone to have defects that lead to test escape and reliability ...
Anis Amalina
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Fabrication and characterization of oxide-based resistive random access memory

, 2016
Memory technologies have been gaining significant advancements in the infrastructure over the years. Factors that are seriously considered are high scalability, excellent and fast speed in operations, long retention ability, optimal endurance, energy ...
Mohamed Hamzah Mohamed Abdul Kadir
core  

Dynamic Control of ReRam

Resistive Random-Access Memory (ReRAM) is a promising non-volatile memory technology that offers high-speed operation, low power consumption, and high scalability.
Khan, Mohammed Rafeeq, Wang, Jinhui
core  

Development of Transparent Conducting Films for Fabrication of Flexible and Transparent Resistive Random Access Memory(FT-ReRAM)

Abstract of annual meeting of the Surface Science of Japan, 2010
KISHI, Hiromu, KINOSHITA, Kentaro, NAKAHARA, Shiryu, OKUTANI, Takumi, TANAKA, Hayato, Kishida, Satoru   +5 more
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Novel Resistivity Random Access Memory (ReRAM) based on tunneling probability modulation using Si/CaF_2_/CdF_2_ quantum-well structures

Novel Resistivity Random Access Memory (ReRAM) based on tunneling probability modulation using Si/CaF_2_/CdF_2_ quantum-well structures
identifier:oai:t2r2.star.titech.ac.jp ...
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Multi-valued logic synthesis for Resistive Random Access Memory (RERAM) based in-memory computing

, 2018
In-memory computing is a growing field of research which involves storing and processing of data at the memory. Resistive random access memory devices (RERAM) are among the class of memories which enable in-memory computing. RERAM devices are known to implement the material implication operation.
Surhonne Anmol Prakash
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The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)

Nanotechnology, 2020
Abstract In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiO x nanoparticles (NPs)/Si and Si/SiO
Yu-Li Chen, Mon-Shu Ho, Wen-Jay Lee, Pei-Fang Chung, Babu Balraj, Chandrasekar Sivakumar   +5 more
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Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Proceedings of the IEEE, 2010
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also
Hiroyuki Akinaga, Hisashi Shima
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Advancements Towards Single Site Information Storage and Processing Using HfO2 Resistive Random Access Memory (ReRAM) [PDF]

, 2013
Resistive Random Access Memory (ReRAM) has attracted much attention among researchers due to its fast switching speeds, lower switching voltages, and feasible integration into industry compatible CMOS processing. These characteristics make ReRAM a viable
Hovish, Michael Quinlan
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