Results 111 to 120 of about 15,800,744 (205)

Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects

open access: yesAdvanced Electronic Materials
In the last 15 years memristors have been investigated as devices for high‐density, low‐power, non‐volatile, resistive random access memory (ReRAM) beyond Moore's law.
R. A. Wells, A. W. Robertson
doaj   +1 more source

Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N‑Containing Heteroaromatic Semiconductors

open access: yes
In organic resistive random-access memory (ReRAM) devices, deeply understanding how to control the performance of π-conjugated semiconductors through molecular-shape-engineering is important and highly desirable.
Cheng Zhang (70708)   +10 more
core   +1 more source

Defect-oriented test and design-for-testability technique for resistive random access memory

open access: yes, 2015
Resistive Random Access Memory (ReRAM) is one of the main emerging memories that has great potential to replace existing semiconductor memories. However, it cannot be denied that ReRAM prone to have defects that lead to test escape and reliability ...
Anis Amalina
core  

Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]

open access: yesNano Lett
Solomon P   +5 more
europepmc   +1 more source

PdNeuRAM: forming-free, multi-bit Pd/HfO<sub>2</sub> ReRAM for energy-efficient neuromorphic computing. [PDF]

open access: yesCommun Eng
Hua E   +14 more
europepmc   +1 more source

Anisotropic Resistive Switching in NiO Thin Films Deposited on Stepped MgO Substrates. [PDF]

open access: yesNanomaterials (Basel)
Duisebayev T   +9 more
europepmc   +1 more source

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