Results 131 to 140 of about 462 (165)
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The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)
Nanotechnology, 2020Abstract In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiO x nanoparticles (NPs)/Si and Si/SiO
Yu-Li Chen +5 more
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ACS Applied Electronic Materials, 2019
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo +5 more
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Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo +5 more
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Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)
Journal of Solid State Electrochemistry, 2013A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron ...
Michiko Yoshitake +4 more
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2019 IEEE 31st International Conference on Microelectronics (MIEL), 2019
The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
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The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
openaire +1 more source
Superlattices and Microstructures, 2020
Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
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Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
openaire +1 more source
Advances in Science and Technology, 2014
Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
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Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
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ECS Transactions, 2012
For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama +3 more
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For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama +3 more
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MRS Proceedings, 2014
ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated.
Ryosuke Ogata +4 more
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ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated.
Ryosuke Ogata +4 more
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Multi-scale modeling of resistive random access memories (ReRAM)
Modélisation multi-échelles des mémoires de type résistives (ReRAM) Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'influence du ...openaire +1 more source