Results 131 to 140 of about 14,870,547 (146)

Pulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

ECS Transactions, 2012
For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama, Kentaro Kinoshita, Ryosuke Koishi, Satoru Kishida   +3 more
openaire   +1 more source

Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM)

Microelectronics Reliability, 2019
Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi, B. Li, K. Xi, L. Luo, L.L. Ji, H.B. Wang, M. Liu   +6 more
openaire   +1 more source

The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

MRS Proceedings, 2014
ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated.
Ryosuke Ogata, Masataka Yoshihara, Naohiro Murayama, Satoru Kishida, Kentaro Kinoshita   +4 more
openaire   +1 more source

Multi-scale modeling of resistive random access memories (ReRAM)

Modélisation multi-échelles des mémoires de type résistives (ReRAM) Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'influence du ...
openaire   +1 more source

Vertically oriented 2D layered perovskite-based resistive random access memory (ReRAM) crossbar arrays

Current Applied Physics, 2022
Younghoon Kim, Seung Jae Baik, Hyunjung Shin   +2 more
openaire   +1 more source

Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory (ReRAM)

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, 2015
K. Kinoshita, R. Koishi, T. Moriyama, K. Kawano, H. Miyashita, S. S. Lee, S. Kishida   +6 more
openaire   +1 more source

Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2015
K. Shiraishi, M.Y. Yang, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B.M. Kope, Y. Nishi   +10 more
openaire   +1 more source

Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices

2023
KOTY DEVI, YANG QINGYUN, YAN HONGWEN, MIYAZOE HIROYUKI, ANDO TAKASHI, HOPSTAKEN MARINUS JOHANNES PETRUS   +5 more
openaire   +1 more source

Natural Organic Fructose-CNT Resistive Switching Random Access Memory (ReRAM) For Sustainable Neuromorphic Computing

Proceedings of the MATSUS Spring 2026 Conference
Feng Zhao, Md Shakil Jiban, Kuan Yew Cheong   +2 more
openaire   +1 more source

In-situ nanoscale characterization of annealing effect on TiN/Ti/HfO<inf>x</inf>/TiN Structure for Resistive Random Access Memory (ReRAM)

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 2012
Hisashi Shima, Hiro Akinaga
openaire   +1 more source