Results 141 to 150 of about 462 (165)

Multi-valued logic synthesis for Resistive Random Access Memory (RERAM) based in-memory computing

2018
In-memory computing is a growing field of research which involves storing and processing of data at the memory. Resistive random access memory devices (RERAM) are among the class of memories which enable in-memory computing. RERAM devices are known to implement the material implication operation.
openaire   +1 more source

Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory (ReRAM)

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, 2015
K. Kinoshita, R. Koishi, T. Moriyama, K. Kawano, H. Miyashita, S. S. Lee, S. Kishida   +6 more
openaire   +1 more source

Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO

Solid-State Electronics, 2022
Zoheir Kordrostami, Samaneh Hamedi
exaly  

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process

Advanced Electronic Materials, 2021
Wan Sik Hwang, Min Ju Kim, Byung Jin Cho
exaly  

Maximum Achievable Rate of Resistive Random-Access Memory Channels by Mutual Information Spectrum Analysis

IEEE Transactions on Information Theory, 2023
Kees Schouhamer Immink, Ying Li, Guanghui Song   +2 more
exaly  

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

ChemistrySelect, 2016
Hyunsang Hwang, Amit Prakash
exaly  

Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2015
K. Shiraishi, M.Y. Yang, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B.M. Kope, Y. Nishi   +10 more
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Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices

2023
KOTY DEVI, YANG QINGYUN, YAN HONGWEN, MIYAZOE HIROYUKI, ANDO TAKASHI, HOPSTAKEN MARINUS JOHANNES PETRUS   +5 more
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In-situ nanoscale characterization of annealing effect on TiN/Ti/HfO<inf>x</inf>/TiN Structure for Resistive Random Access Memory (ReRAM)

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 2012
Hisashi Shima, Hiro Akinaga
openaire   +1 more source

Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

Microelectronic Engineering, 2013
Miyoung Kim, Minhee Yun, Deok-Hwang Kwon   +2 more
exaly