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Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang +3 more
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In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang +3 more
openaire +1 more source
Integrated Optics: Devices, Materials, and Technologies XXV, 2021
The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang +3 more
openaire +1 more source
The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang +3 more
openaire +1 more source
ACS Applied Electronic Materials, 2019
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo +5 more
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Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo +5 more
openaire +4 more sources
Solid-State Electronics, 2015
Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
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Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
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Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)
Journal of Solid State Electrochemistry, 2013A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron ...
Michiko Yoshitake +4 more
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Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang +2 more
openaire +1 more source
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang +2 more
openaire +1 more source
2019 IEEE 31st International Conference on Microelectronics (MIEL), 2019
The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
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The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
openaire +1 more source
Superlattices and Microstructures, 2020
Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
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Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
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Advances in Science and Technology, 2014
Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
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Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
openaire +1 more source