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Data-driven differentiation analysis of urban high-tech industries: Research on bibliometrics and large language models. [PDF]
PLoS OneSong H +4 more
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Fast and robust analog in-memory deep neural network training. [PDF]
Nat CommunRasch MJ +3 more
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Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Proceedings of the IEEE, 2010In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also
Hiroyuki Akinaga, Hisashi Shima
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Solid-State Electronics, 2015
Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
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Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
openaire +3 more sources
Integrated Optics: Devices, Materials, and Technologies XXV, 2021
The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang +3 more
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The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang +3 more
openaire +3 more sources
Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang +3 more
openaire +3 more sources
In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang +3 more
openaire +3 more sources
Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang +2 more
openaire +3 more sources
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang +2 more
openaire +3 more sources
Microelectronics Reliability, 2019
Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi +6 more
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Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi +6 more
openaire +3 more sources