Results 101 to 110 of about 14,870,547 (146)

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

Materials Today Sustainability
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj   +1 more source

Flexible Inorganic/Organic Memristor Based on W-Doped MoO_x/Poly(methyl methacrylate) Heterostructure

Nanomaterials
Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and
Gion Kalemai, Konstantinos Aidinis, Elias Sakellis, Petros-Panagis Filippatos, Polychronis Tsipas, Dimitris Davazoglou, Anastasia Soultati   +6 more
doaj   +1 more source

Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM)

Journal of the Vacuum Society of Japan, 2010
YODA, Takatoshi, KINOSHITA, Kentaro, MAKINO, Tatsuya, DOBASHI, Kazufumi, KISHIDA, Satoru   +4 more
openaire   +2 more sources

Defect-Oriented Test and Design-for-Testability Technique for Resistive Random Access Memory [PDF]

, 2016
Resistive Random Access Memory (ReRAM) is one of the main emerging memories that has great potential to replace existing semiconductor memories. However, it cannot be denied that ReRAM prone to have defects that lead to test escape and reliability ...
Soin, N., Arshad, N., Salehuddin, F., Salim, S.I.   +3 more
core  

Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory

, 2018
Retention of the low resistance state (LRS) in resistive random access memory (ReRAM) significantly decreases at increasing electrical stress due to barrier lowering of ion migration and Joule heating.
Koo, Y, Hwang, H, Ambrogio, S, Woo, J, Ielmini, D, Song, J   +5 more
core   +1 more source

Pulse-induced resistive and capacitive switching in TiO₂ ReRAM

In this study, we provide the experimental evidence of the coexistence of resistive and capacitive features in nanoscale TiO2 based solid state Resistive Random Access Memory (ReRAM). Biasing the devices with voltage sweeps exhibits non-zero crossing I-V
Khiat, A., Salaoru, I., Prodromakis, T., Berdan, R.   +3 more
core   +1 more source

A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

Advanced Electronic Materials
Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in‐memory computing ...
Saransh Shrivastava, Wei‐Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung‐Yuen Tseng   +4 more
doaj   +1 more source

A data-driven Verilog-A ReRam model

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic yet computationally efficient device models.
Nikolaidis, Spyridon, Messaris, Ioannis, Prodromakis, Themis, Khiat, Ali, Serb, Alexander   +4 more
core   +1 more source

Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects

Advanced Electronic Materials
In the last 15 years memristors have been investigated as devices for high‐density, low‐power, non‐volatile, resistive random access memory (ReRAM) beyond Moore's law.
R. A. Wells, A. W. Robertson
doaj   +1 more source

Performance Analysis and Code Design for Resistive Random-Access Memory Using Channel Decomposition Approach

A novel framework for performance analysis and code design is proposed to address the sneak path (SP) problem in resistive random-access memory (ReRAM) arrays. The main idea is to decompose the ReRAM channel, which is both non-ergodic and data-dependent,
Gao, Meiru, Li, Ying, Dai, Bin, Cai, Kui, Song, Guanghui   +4 more
core