Results 101 to 110 of about 15,800,744 (205)

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang, Mengxin Zheng, Shengyu Fan, Qian Lou, Rui Hou, Dan Meng, Mingzhe Zhang   +6 more
doaj   +1 more source

Defect-Oriented Test and Design-for-Testability Technique for Resistive Random Access Memory [PDF]

, 2016
Resistive Random Access Memory (ReRAM) is one of the main emerging memories that has great potential to replace existing semiconductor memories. However, it cannot be denied that ReRAM prone to have defects that lead to test escape and reliability ...
Soin, N., Arshad, N., Salehuddin, F., Salim, S.I.   +3 more
core  

Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array

, 2017
The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 ...
신형순
core   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials
No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance.
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
doaj   +1 more source

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

Materials Today Sustainability
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj   +1 more source

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO₂ Resistive Material Depending on the Thickness of Ti

, 2011
The effects of the reactive Ti layer on the resistive switching characteristics of TiN/Ti/TiO2/TiN resistive random access memory (ReRAM) are investigated.
Yong Soo Kim, Sung Ki Park, Byun Ggu Gyun, Jung Nam Kim, Moon Sig Joo, Wan Gee Kim, Jong Hee Yoo, Min Gyu Sung, Sook Joo Kim, Jae Sung Roh, Ja Yong Kim, Jun Young Byun   +11 more
core   +1 more source

Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM)

Journal of the Vacuum Society of Japan, 2010
YODA, Takatoshi, KINOSHITA, Kentaro, MAKINO, Tatsuya, DOBASHI, Kazufumi, KISHIDA, Satoru   +4 more
openaire   +2 more sources

Performance Analysis and Code Design for Resistive Random-Access Memory Using Channel Decomposition Approach

A novel framework for performance analysis and code design is proposed to address the sneak path (SP) problem in resistive random-access memory (ReRAM) arrays. The main idea is to decompose the ReRAM channel, which is both non-ergodic and data-dependent,
Gao, Meiru, Li, Ying, Dai, Bin, Cai, Kui, Song, Guanghui   +4 more
core  

Accelerated Retention Test Method by Controlling Ion Migration Barrier of Resistive Random Access Memory

, 2018
Retention of the low resistance state (LRS) in resistive random access memory (ReRAM) significantly decreases at increasing electrical stress due to barrier lowering of ion migration and Joule heating.
Koo, Y, Hwang, H, Ambrogio, S, Woo, J, Ielmini, D, Song, J   +5 more
core   +1 more source

A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

Advanced Electronic Materials
Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in‐memory computing ...
Saransh Shrivastava, Wei‐Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung‐Yuen Tseng   +4 more
doaj   +1 more source