Results 71 to 80 of about 462 (165)

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

Materials Today Sustainability
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj   +1 more source

Study on Fabrication of Forming-Free Resistance Random Access Memory (ReRAM)

Journal of the Vacuum Society of Japan, 2010
YODA, Takatoshi, KINOSHITA, Kentaro, MAKINO, Tatsuya, DOBASHI, Kazufumi, KISHIDA, Satoru   +4 more
openaire   +2 more sources

A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing

Advanced Electronic Materials
Due to the imitation of the neural functionalities of the human brain via optical modulation of resistance states, photoelectric resistive random access memory (ReRAM) devices attract extensive attraction for synaptic electronics and in‐memory computing ...
Saransh Shrivastava, Wei‐Sin Dai, Stephen Ekaputra Limantoro, Hans Juliano, Tseung‐Yuen Tseng   +4 more
doaj   +1 more source

Correlation of structural and electrical properties of gadolinium-substituted cobalt ferrites for data storage applications

Next Materials
Gadolinium-substituted cobalt ferrite (CoFe2-xGdxO4) nanoparticles with varying gadolinium concentrations (x = 0.0, 0.1, 0.2) were successfully synthesized via a sol-gel method to investigate their structural and electrical properties.
Marjan Asif, Maryum Aftab, M. Anis-ur-Rehman   +2 more
doaj   +1 more source

Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects

Advanced Electronic Materials
In the last 15 years memristors have been investigated as devices for high‐density, low‐power, non‐volatile, resistive random access memory (ReRAM) beyond Moore's law.
R. A. Wells, A. W. Robertson
doaj   +1 more source

Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]

Nano Lett
Solomon P, Kaniselvan M, Miyazoe H, Khan B, Ando T, Luisier M.   +5 more
europepmc   +1 more source

PdNeuRAM: forming-free, multi-bit Pd/HfO₂ ReRAM for energy-efficient neuromorphic computing. [PDF]

Commun Eng
Hua E, Spyrou T, Ahmadi M, Syed AM, Xun H, Braic L, Wehbe N, van der Veer E, Elatab N, Gebregiorgis A, Gaydadjiev G, Noheda B, Hamdioui S, Ishihara R, Abunahla H.   +14 more
europepmc   +1 more source

Morphology analysis of the reconstruction of nano-filaments during aborted reset operation in Cu-based ReRAM devices. [PDF]

Sci Rep
Yasmeen S, DiFilippo A, Orlowski M.
europepmc   +1 more source

Low-operation voltage conductive-bridge random access memory based on amorphous NbS₂. [PDF]

Smart Mol, 2023
Lu B, Hu D, Wu M, Yang R, Ding Y, Huang J, Zhang Q, Ye Z, Hou Y, Lu J.   +9 more
europepmc   +1 more source

Anisotropic Resistive Switching in NiO Thin Films Deposited on Stepped MgO Substrates. [PDF]

Nanomaterials (Basel)
Duisebayev T, Zhazitov M, Abdullah M, Tezekbay Y, Syrlybekov A, Ibraimov M, Khaniyev B, Serikov T, Nuraje N, Toktarbaiuly O.   +9 more
europepmc   +1 more source