Results 71 to 80 of about 14,870,547 (146)

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

, 2019
Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high switching speed, excellent scalability, and low power consumption together with accessible ...
openaire   +1 more source

Hardware‐Efficient Locality‐Preserving Graph Processing via Ferroelectric Fowler–Nordheim Tunneling Crossbar Array

Small, EarlyView.
Real‐world graph data are directly mapped onto an mCBA, enabling node similarity to be computed through a single current readout. Strongly nonlinear devices suppress long‐range multi‐hop contributions while preserving local connectivity, whereas weakly nonlinear devices allow excessive signal propagation.
Jae‐Hyun Lee, Jun‐Young Park, Jeong‐Min Lee, Hyun‐Jun Kang, Seon‐Jin Yoo, Ki‐Nam Park, Yoon Ho Jang, Joon‐Kyu Han   +7 more
wiley   +1 more source

Network-on-ReRAM for Scalable Processing-in-Memory Architecture Design

, 2021
The non-volatile metal-oxide resistive random access memory (ReRAM) is an emerging alternative for the current memory technologies. The unique capability of ReRAM to perform analog and digital arithmetic and logic operations has enabled this technology ...
Mehdi Modarressi, Dabiri, Bita,, Bita Dabiri, Masoud Daneshtalab, Modarressi, Mehdi,, Daneshtalab, Masoud,   +5 more
core   +1 more source

A keyword-based approach to analyzing scientific research trends: ReRAM present and future

Scientific Reports
Research trend analysis is a primary step in defining research structures and predicting research directions from scientific papers. Recently, due to millions of annual scientific publications, researchers demand analytical methods to interpret the ...
Hyeon Kim, Seong Hun Kim, Jaeseon Kim, Eun Ho Kim, Jun Hyeong Gu, Donghwa Lee   +5 more
doaj   +1 more source

Nano-Graphitic based Non-Volatile Memories Fabricated by the Dynamic Spray-Gun Deposition Method

Micromachines, 2019
This paper deals with the fabrication of Resistive Random Access Memory (ReRAM) based on oxidized carbon nanofibers (CNFs). Stable suspensions of oxidized CNFs have been prepared in water and sprayed on an appropriate substrate, using the dynamic spray ...
Paolo Bondavalli, Marie Blandine Martin, Louiza Hamidouche, Alberto Montanaro, Aikaterini-Flora Trompeta, Costas A. Charitidis   +5 more
doaj   +1 more source

Amorphous, Highly Conductive Pr0.7Ca0.3MnO3 for Area‐Dependent Resistive Switching AlOx Bilayer Devices

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
High‐conductive amorphous Pr0.7Ca0.3MnO3 (PCMO) is explored as an alternative to polycrystalline PCMO for memristive heterostructures with back‐end‐of‐line compatibility, targeting neuromorphic hardware integration. Structural, electrical, and band alignment analyzes are correlated with the electrical characterization of area‐dependent resistive ...
Max Buczek, Iliyas T. Dossayev, Clemens Wittberg, Yen‐Po Liu, Kalle Goß, David N. Mueller, Zoe Moos, Zhenhao Liu, Karsten Bittkau, Mohammad Hassan Sultani, Stephan Menzel, Susanne Hoffmann‐Eifert, Regina Dittmann   +12 more
wiley   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

High-Performance Resistance-Switchable Multilayers of Graphene Oxide Blended with 1,3,4-Oxadiazole Acceptor Nanocomposite

Micromachines, 2019
Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory ...
Lei Li, Guangming Li
doaj   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Verification of In-Memory Logic Design using ReRAM Crossbars

, 2023
Resistive Random Access Memory (ReRAM) technologies enable the development of innovative architectures for in-memory computing. Many logic design styles, like Imply, Magic or Majority, have been explored for mapping Boolean functions to ReRAM crossbars ...
Deb, Arighna, Shirinzadeh, Saeideh, Datta, Kamalika, Shirinzadeh, Fatemeh, Kole, Abhoy, Drechsler, Rolf   +5 more
core   +1 more source