Results 41 to 50 of about 462 (165)
Advanced Electronic Materials, EarlyView.1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
A Novel ReRAM-Based Architecture of Field Sequential Color Driver for High-Resolution LCoS Displays
IEEE Access, 2020 Liquid crystal on-silicon (LCoS) display is one of the most representative micro-display technologies, and is widely adopted in virtual reality (VR) and augmented reality (AR) devices thanks to a relatively simple structure using a semiconductor ...
Youngsun Han, Dongmin Kim, Yongtae Kim
doaj +1 more source
The nature of column boundaries in micro-structured silicon oxide nanolayers
APL Materials, 2021 Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers.
K. Patel +6 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz +11 more
wiley +1 more source
Advanced Intelligent Systems, EarlyView.A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad +4 more
wiley +1 more source
A Ferroelectric FET-Based Processing-in-Memory Architecture for DNN Acceleration
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 This paper presents a ferroelectric FET (FeFET)-based processing-in-memory (PIM) architecture to accelerate the inference of deep neural networks (DNNs).
Yun Long +7 more
doaj +1 more source
Small, EarlyView.Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Advanced Science, Volume 13, Issue 43, 3 August 2026.Tunable dynamics of an interface‐type memristor array enabled by dual‐ion modulation through Ag nanoclusters are demonstrated. A 32 × 32 one‐resistor (1R) array exhibits 100% yield with high temporal/spatial uniformity (<3%) and a rectification ratio of 105.
Yoonho Cho +7 more
wiley +1 more source
Nano ResearchNon-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing.
Dong Li +12 more
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 51, 25 June 2026.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source