Results 41 to 50 of about 14,870,547 (146)

Electroforming‐Free, Self‐Rectifying Selector‐Only Memory With Diffusive Cu‐Ion Dynamics for Logic‐In‐Memory Computing

Advanced Science, EarlyView.
Electroforming‐free, self‐rectifying switching with polarity‐dependent threshold modulation is realized in selector‐only memory through Cu‐ion migration in a bilayer stacked dual functional materials. Ultrafast rupturing of Cu filament enables drift‐free operation with high stability.
Jae‐Kyeong Kim, Dae‐Seong Woo, Min‐Jong Han, Hong‐Gwang Seo, Gwang‐Ho Park, In‐Taek Woo, Jea‐Gun Park, Jinsub Park   +7 more
wiley   +1 more source

Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics

Scientific Reports
Resistive Random Access Memory (ReRAM) is an emerging class of non-volatile memory that stores data by altering the resistance of a material within a memory cell.
Adiba Adiba, Ph Nonglen Meitei, Tufail Ahmad   +2 more
doaj   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Reliability and Performance Optimization of Resistive Random-Access Memory Devices for Advanced Computing and Memory Applications [PDF]

, 2022
Current trends towards more efficient computing include alternatives to the standard von Neumann architecture and a trend towards in-memory computing with non-volatile memory (NVM) arrays.
Liehr, Maximilian
core  

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However,
Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah   +3 more
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

, 2018
The dependence of reactive metal layer on resistive switching characteristics is investigated in a bi-layer structural Ta/HfOx filament type resistive random access memory (ReRAM).
Hwang, H, Park, S, Lee, D, Woo, J, Lee, S, Cha, E   +5 more
core   +1 more source

Application of Resistive Random Access Memory (RRAM) For Non-Von Neumann Computing [PDF]

, 2022
The movement of data between physically separated memory and processing units in conventional computing systems (the so-called von Neumann architecture) incurs significant costs in energy and latency. This is known as the von Neumann bottleneck. With the
Rafiq, Sarah
core  

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory

, 2016
Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future.
Prakash A., Hyunsang Hwang
core   +1 more source

Lead-free Cs2CuBiCl6 double perovskite for ReRAM: Electrode-dependent resistive switching and performance analysis

Memories - Materials, Devices, Circuits and Systems
Resistive Random-Access Memory (ReRAM) is a promising technology for next-generation non-volatile memory and neuromorphic computing due to its scalability, low power consumption, and rapid switching.
Rajib Sutradhar, Chinmaya Kumar Pradhan, Himangshu Jyoti Gogoi, Pukhrambam Puspa Devi, Kuldeep Gogoi, Dipjyoti Das   +5 more
doaj   +1 more source