Results 11 to 20 of about 462 (165)
A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications
IEEE Open Journal of Circuits and Systems, 2021 Resistive random access memory (ReRAM)-based computing in-memory (CIM) is a promising solution to overcome the von-Neumann bottleneck in conventional computing architectures. We propose a reconfigurable ReRAM architecture using a novel 4T2R bit-cell that
Yuzong Chen +3 more
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IEEE Access, 2022 In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian +9 more
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Advanced Intelligent Systems, 2022 As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai +10 more
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Nanoscale Research Letters, 2022 Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan +2 more
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XB-SIM*: A Simulation Framework for Modeling and Exploration of ReRAM-Based CNN Acceleration Design
Tsinghua Science and Technology, 2021 Resistive Random Access Memory (ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance.
Xiang Fei, Youhui Zhang, Weimin Zheng
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APL Materials, 2021 The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices.
Horatio R. J. Cox +7 more
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Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE Access, 2022 In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are ...
Nils Kopperberg +6 more
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Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application [PDF]
Ceramics International, 2020 Abstract Memory structures play a basic role in providing integrated circuits of powerful processing capabilities. Even most powerful processors have nothing to offer without an accompanying memory and importantly, the development of mobile devices is dependent on the continual improvement of memory technology. Herein, we report the synthesis of TiO2
Alsaiari, Mabkhoot +3 more
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Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM
Discrete Dynamics in Nature and Society, 2015 There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the ...
Peng Hai-yun, Zhou Wen-gang
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EnTiered-ReRAM: An Enhanced Low Latency and Energy Efficient TLC Crossbar ReRAM Architecture
IEEE Access, 2021 Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures.
Yang Zhang +4 more
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