Results 11 to 20 of about 14,870,547 (146)
Resistive Random Access Memory (ReRAM) [PDF]
International Journal of Research and Engineering, 2019 Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
Dayalan, Muthu
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Communications EngineeringResistive Random Access Memories (ReRAM) arrays provides a promising basement to deploy neural network accelerators based on near or in memory computing.
Mona Ezzadeen +12 more
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Bio-Organic based Resistive Switching Random-Access Memory
, 2023 A non-volatile memory is a solid-state device that can retain data even when power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things.
Cheong, Kuan Yew +2 more
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Resistive random access memories (ReRAM) with modified electrodes
, 2020 Τhe design, implementation and characterization of Resistive Random Access Memories (ReRAM) devices with variable electrodes for various types of insulating material have been extensively studied.
Καρακόλης, Παναγιώτης +1 more
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Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
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, 2022 Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage.
Izzat Aziz +6 more
core +1 more source
XB-SIM*: A Simulation Framework for Modeling and Exploration of ReRAM-Based CNN Acceleration Design
Tsinghua Science and Technology, 2021 Resistive Random Access Memory (ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance.
Xiang Fei, Youhui Zhang, Weimin Zheng
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Surface effects of electrode-dependent switching behavior of resistive random-access memory [PDF]
, 2016 The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality.
Wei, Tzu Chiao +4 more
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Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
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APL Materials, 2021 The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices.
Horatio R. J. Cox +7 more
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