Results 11 to 20 of about 15,800,744 (205)

Resistive Random Access Memory (ReRAM) [PDF]

International Journal of Research and Engineering, 2019
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
Dayalan, Muthu
openaire   +3 more sources

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Advanced Electronic Materials
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan, Sumit Choudhary, Satinder K. Sharma   +2 more
doaj   +2 more sources

Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain-Inspired Computing. [PDF]

Adv Sci (Weinh)
In this work, we demonstrated a robust 2D MoS2 based iontronic memtransistor of planar architecture operated under the influence of an electrical double layer with versatile performance and applications, including pinched hysteresis nature of transfer curve, analogue channel conductance tuning, low‐voltage operation, logic‐gate operation, classical ...
Saha P, Bej S, Das BC.
europepmc   +2 more sources

Bio-Organic based Resistive Switching Random-Access Memory

, 2023
A non-volatile memory is a solid-state device that can retain data even when power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things.
Cheong, Kuan Yew, Zhao, Feng, Awais, Muhammad   +2 more
core   +1 more source

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

IEEE Open Journal of Circuits and Systems, 2021
Resistive random access memory (ReRAM)-based computing in-memory (CIM) is a promising solution to overcome the von-Neumann bottleneck in conventional computing architectures. We propose a reconfigurable ReRAM architecture using a novel 4T2R bit-cell that
Yuzong Chen, Lu Lu, Bongjin Kim, Tony Tae-Hyoung Kim   +3 more
doaj   +1 more source

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

IEEE Access, 2022
In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian, Daniel Leon, Francisco J. Franco, Juan C. Fabero, Manon Letiche, Yolanda Morilla, Pedro Martin-Holgado, Helmut Puchner, Hortensia Mecha, Juan A. Clemente   +9 more
doaj   +1 more source

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

Advanced Intelligent Systems, 2022
As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai, She-Hwa Yen, Apurva Uppala, Luke Thomas, Tianchi Liu, Peter Fu, Xiaofeng Zhang, Ambrose Low, Deepak Kamalanathan, Joe Hsu, Buvna Ayyagari-Sangamalli   +10 more
doaj   +1 more source

Surface effects of electrode-dependent switching behavior of resistive random-access memory [PDF]

, 2016
The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality.
Wei, Tzu Chiao, Tsai, Dung Sheng, Ke, Jr Jian, He, Jr-Hau, Lin, Chun-Ho   +4 more
core   +1 more source

Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Nanoscale Research Letters, 2022
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park   +2 more
doaj   +1 more source

XB-SIM*: A Simulation Framework for Modeling and Exploration of ReRAM-Based CNN Acceleration Design

Tsinghua Science and Technology, 2021
Resistive Random Access Memory (ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance.
Xiang Fei, Youhui Zhang, Weimin Zheng
doaj   +1 more source