Results 21 to 30 of about 716 (180)

ReRAM technology; challenges and prospects

IEICE Electronics Express, 2012
We review recent progresses in Resistive Random Access Memory (ReRAM) technologies together with difficult challenges and prospects. ReRAM is one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities.
Hiro Akinaga, Hisashi Shima
openaire   +2 more sources

Parallel Computing of Graph-based Functions in ReRAM [PDF]

ACM Journal on Emerging Technologies in Computing Systems, 2022
Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory technology. Besides its low power consumption and its high scalability, its inherent computation capabilities make ReRAM especially interesting for future computer architectures. Merging computations into the memory is a promising solution for overcoming the memory bottleneck.
Saman Fröhlich, Saeideh Shirinzadeh, Rolf Drechsler   +2 more
openaire   +2 more sources

Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

Nanoscale Research Letters, 2022
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan, Seongjae Cho, Byung-Gook Park   +2 more
doaj   +1 more source

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO₃ Resistive Random Access Memory

Micromachines, 2022
With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that ...
Ricky Wenkuei Chuang, Bo-Liang Liu, Cheng-Liang Huang   +2 more
doaj   +1 more source

RED: A ReRAM-based Deconvolution Accelerator [PDF]

2019 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2019
2019 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Fan, Zichen, Li, Ziru, Li, Bing, Chen, Yiran, Hai, Li   +5 more
openaire   +4 more sources

High-Performance InGaZnO-Based ReRAMs [PDF]

IEEE Transactions on Electron Devices, 2019
Amorphous indium–gallium–zinc oxide (IGZO) is one of the most promising oxide semiconductors for thin–film transistors and it has started to replace amorphous silicon in display drivers. However, attempts to use IGZO in resistive random–access memories (ReRAMs) are still scarce.
Pengfei Ma, Guangda Liang, Yiming Wang, Yunpeng Li, Qian Xin, Yuxiang Li, Aimin Song   +6 more
openaire   +3 more sources

PRAP-PIM: A weight pattern reusing aware pruning method for ReRAM-based PIM DNN accelerators

High-Confidence Computing, 2023
Resistive Random-Access Memory (ReRAM) based Processing-in-Memory (PIM) frameworks are proposed to accelerate the working process of DNN models by eliminating the data movement between the computing and memory units.
Zhaoyan Shen, Jinhao Wu, Xikun Jiang, Yuhao Zhang, Lei Ju, Zhiping Jia   +5 more
doaj   +1 more source

Analog Weights in ReRAM DNN Accelerators [PDF]

2019 IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2019
2019 IEEE International Conference on Artificial Intelligence Circuits and Systems, 5 pages, 4 ...
Jason Kamran Eshraghian, Sung-Mo Kang 0001, Seungbum Baek, Garrick Orchard, Herbert Ho-Ching Iu, Wen Lei   +5 more
openaire   +3 more sources

NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching

Science and Technology of Advanced Materials, 2016
We have studied the stability of the resistive switching process in the Al/(In2O3)0.9(SnO2)0.1/TiO2 assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO2
Elena Filatova, Aleksei Konashuk, Yuri Petrov, Evgeny Ubyivovk, Andrey Sokolov, Andrei Selivanov, Victor Drozd   +6 more
doaj   +1 more source

ARIA: Additive ReRAM-Based Integrity and Aging Monitoring for ICs

IEEE Access
This paper reports an approach for monitoring aging and integrity of CMOS circuits through additively manufactured Resistive Random-Access Memory (ReRAM) based test structures.
Thomas Schultz, Rashmi Jha, Brian Dupaix, Matt Casto   +3 more
doaj   +1 more source