Results 41 to 50 of about 241 (114)

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

Advanced Intelligent Systems, 2022
As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai, She-Hwa Yen, Apurva Uppala, Luke Thomas, Tianchi Liu, Peter Fu, Xiaofeng Zhang, Ambrose Low, Deepak Kamalanathan, Joe Hsu, Buvna Ayyagari-Sangamalli   +10 more
doaj   +1 more source

Honey-ReRAM Enabled Sustainable Edge AI System for IoT Applications

IEEE Access
This paper is toward a promising solution to address the environmental sustainability challenge in computing by building brain-inspired and green non-Von Neumann systems with Resistive Random-Access Memory (ReRAM) made from natural organic materials ...
Jinhui Wang, Feng Zhao, Mohammad Rafeeq Khan, Md. Mehedi Hasan Tanim, Zoe Templin, Harshvardhan Uppaluru   +5 more
doaj   +1 more source

Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics

Scientific Reports
Resistive Random Access Memory (ReRAM) is an emerging class of non-volatile memory that stores data by altering the resistance of a material within a memory cell.
Adiba Adiba, Ph Nonglen Meitei, Tufail Ahmad   +2 more
doaj   +1 more source

A Relaxed Quantization Training Method for Hardware Limitations of Resistive Random Access Memory (ReRAM)-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Nonvolatile computing-in-memory (nvCIM) exhibits high potential for neuromorphic computing involving massive parallel computations and for achieving high energy efficiency.
Wei-Chen Wei, Chuan-Jia Jhang, Yi-Ren Chen, Cheng-Xin Xue, Syuan-Hao Sie, Jye-Luen Lee, Hao-Wen Kuo, Chih-Cheng Lu, Meng-Fan Chang, Kea-Tiong Tang   +9 more
doaj   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices.
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
doaj   +1 more source

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However,
Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah   +3 more
doaj   +1 more source

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Advanced Electronic Materials
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan, Sumit Choudhary, Satinder K. Sharma   +2 more
doaj   +1 more source

Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics

Applied Sciences, 2019
Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal.
Niloufar Raeis-Hosseini, Junsuk Rho
doaj   +1 more source

GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays

AIP Advances
In this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo, June Hyuk Lee, Min Kyu Yang   +2 more
doaj   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials
No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance.
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
doaj   +1 more source