Results 41 to 50 of about 716 (180)
An efficient read approach for memristive crossbar array
Memories - Materials, Devices, Circuits and Systems, 2023 Resistive random access memories (ReRAM) have drawn attention of researchers due to their unique properties with applications in in-memory computing, which allows storage and computation in the same unit.
Pravanjan Samanta +3 more
doaj +1 more source
, 2014 This deliverable D6.1 reports on the progress of the website development, which has been setup in multiple languages to attain a maximum of different target audiences.
Kies, Uwe, Akhobadze, Sophiko
openaire +1 more source
Triple‐Level Content‐Addressable Vertical NAND Flash Memory
Advanced Science, EarlyView.Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park +8 more
wiley +1 more source
A compact Verilog-A ReRAM switching model
CoRR, 2017 The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed physical devices.
Ioannis Messaris +4 more
openaire +2 more sources
Advanced Science, EarlyView.Electroforming‐free, self‐rectifying switching with polarity‐dependent threshold modulation is realized in selector‐only memory through Cu‐ion migration in a bilayer stacked dual functional materials. Ultrafast rupturing of Cu filament enables drift‐free operation with high stability.
Jae‐Kyeong Kim +7 more
wiley +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
Determining the Electrical Charging Speed Limit of ReRAM Devices
IEEE Journal of the Electron Devices Society, 2021 Redox-based random-access memory (ReRAM) has the potential to successfully address the technological barriers that today’s memory technologies face. One of its promising features is its fast switching speed down to 50 ps.
M. von Witzleben +4 more
doaj +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk
Advanced Electronic Materials, 2023 A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun +2 more
doaj +1 more source