Results 41 to 50 of about 2,956 (211)
A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications
Resistive random access memory (ReRAM)-based computing in-memory (CIM) is a promising solution to overcome the von-Neumann bottleneck in conventional computing architectures. We propose a reconfigurable ReRAM architecture using a novel 4T2R bit-cell that
Yuzong Chen +3 more
doaj +1 more source
Re(2)fresh: A Framework for Mitigating Read Disturbance in ReRAM-based DNN Accelerators
A severe read disturbance problem degrades the inference accuracy of a resistive RAM (ReRAM) based deep neural network (DNN) accelerator. Refresh, which reprograms the ReRAM cells, is the most obvious solution for the problem, but programming ReRAM ...
Shin, Hyein +2 more
core +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
wiley +1 more source
Understanding the trade-offs in multi-level cell ReRAM memory design
Resistive Random Access Memory (ReRAM) is one of the most promising emerging memory technologies as a potential replacement for DRAM memory and/or NAND Flash. Multi-level cell (MLC) ReRAM, which can store multiple bits in a single ReRAM cell, can further
Cong Xu +9 more
core +1 more source
Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration
Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing.
Xiaohua Liu +7 more
doaj +1 more source
A compact Verilog-A ReRAM switching model
The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed physical devices.
Ioannis Messaris +4 more
openaire +2 more sources
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park +7 more
wiley +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
An efficient read approach for memristive crossbar array
Resistive random access memories (ReRAM) have drawn attention of researchers due to their unique properties with applications in in-memory computing, which allows storage and computation in the same unit.
Pravanjan Samanta +3 more
doaj +1 more source
Ising-ReRAM: A Low Power Ising Machine ReRAM Crossbar for NP Problems
4 pages + 1 page reference, 4 figures, 2 tables, targeting IEEE conference (e.g. ISCAS)
Everest Bloomer +3 more
openaire +3 more sources

