Results 61 to 70 of about 716 (180)

Origin, verification, and device‐level impacts of p‐doping in two‐dimensional transition metal dichalcogenides

InfoMat, EarlyView.
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han, Hye In Choi, Ji Yeon Kim, Wenhu Shen, Yong Soo Cho   +4 more
wiley   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Bio‐Compatible Flexible Memristive Devices Enabled by BNNT/MWCNT–ZnO Quantum Dot Hybrid Percolation Networks

Small, EarlyView.
BNNT rods incorporated into MWCNT–ZnO quantum dot networks regulate charge transport and suppress leakage in flexible, transparent resistive memory devices. The resulting hybrid architecture preserves nonvolatile switching under static bending and after low‐temperature exposure and subcutaneous implantation.
Jaeho Shim, Dong Gwon Heo, Seonghwan Oh, Jinseo Park, Seok‐Ho Seo, Juhee You, Yuwen Wei, Whan Kim, Inseok Seo, Jinseok Kim, Donghee Park, Dong Ick Son   +11 more
wiley   +1 more source

Hardware‐Efficient Locality‐Preserving Graph Processing via Ferroelectric Fowler–Nordheim Tunneling Crossbar Array

Small, EarlyView.
Real‐world graph data are directly mapped onto an mCBA, enabling node similarity to be computed through a single current readout. Strongly nonlinear devices suppress long‐range multi‐hop contributions while preserving local connectivity, whereas weakly nonlinear devices allow excessive signal propagation.
Jae‐Hyun Lee, Jun‐Young Park, Jeong‐Min Lee, Hyun‐Jun Kang, Seon‐Jin Yoo, Ki‐Nam Park, Yoon Ho Jang, Joon‐Kyu Han   +7 more
wiley   +1 more source

Amorphous, Highly Conductive Pr0.7Ca0.3MnO3 for Area‐Dependent Resistive Switching AlOx Bilayer Devices

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
High‐conductive amorphous Pr0.7Ca0.3MnO3 (PCMO) is explored as an alternative to polycrystalline PCMO for memristive heterostructures with back‐end‐of‐line compatibility, targeting neuromorphic hardware integration. Structural, electrical, and band alignment analyzes are correlated with the electrical characterization of area‐dependent resistive ...
Max Buczek, Iliyas T. Dossayev, Clemens Wittberg, Yen‐Po Liu, Kalle Goß, David N. Mueller, Zoe Moos, Zhenhao Liu, Karsten Bittkau, Mohammad Hassan Sultani, Stephan Menzel, Susanne Hoffmann‐Eifert, Regina Dittmann   +12 more
wiley   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Abrupt and Gradual Resistive Switching in Interface‐Modified IGZO Memristors

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The indium gallium zinc oxide (IGZO) surface is modified with Ar‐plasma and ultraviolet ozone (UV‐O3) treatment. The W/IGZO/Pt memristors with Ar‐plasma treatment show forming‐free abrupt switching, whereas the UV‐O3‐treated device exhibits gradual switching, while both operate at voltages ≤1 V.
Krishna Rudrapal, Christian Spieth, Michael Oehme, Kathrin Küster, Ulrich Starke, Alwin Daus   +5 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices.
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
doaj   +1 more source

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However,
Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah   +3 more
doaj   +1 more source