Results 61 to 70 of about 2,956 (211)
Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM
, 2013 Nonvolatile redox-based resistive RAM (ReRAM) is considered to be a promising candidate for passive nanocrossbar integration. For this application, a high degree of nonlinearity in I-V characteristics of the ReRAM device is required.
Wouters, Dirk J. +5 more
core +1 more source
Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk
Advanced Electronic Materials, 2023 A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun +2 more
doaj +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Read margin analysis in an ReRAM crossbar array
, 2016 This paper analyzes effects of design parameters on the read margin of an ReRAM crossbar array. Because ReRAM's crossbar array suffers from small read margin, design parameters must be optimized for large read margin.
Jaehyun Seo +3 more
core +1 more source
An Energy-Efficient Digital ReRAM-Crossbar-Based CNN With Bitwise Parallelism
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 There is great attention to develop hardware accelerator with better energy efficiency, as well as throughput, than GPUs for convolutional neural network (CNN). The existing solutions have relatively limited parallelism as well as large power consumption
Leibin Ni +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
ReRAM From Material Study to CMOS Co-integration [PDF]
, 2019 The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm ...
Shahrabi, Elmira
core +1 more source
Fabrication and characterisation of SiOₓ ReRAM devices [PDF]
, 2022 Silicon oxide (SiOx) based resistive random access memory (ReRAM) devices are capable of changing resistance reversibly, making them ideal candidates for next generation memory.
Zhao, Longfei
core +1 more source
ReGra: Accelerating Graph Traversal Applications Using ReRAM With Lower Communication Cost
IEEE Access, 2020 There is a growing gap between data explosion speed and the improvement of graph processing systems on conventional architectures. The main reason lies in the large overhead of random access and data movement, as well as the unbalanced and unordered ...
Haoqiang Liu +3 more
doaj +1 more source
Nonlinear Dynamics and Invariants of Motion in ReRAM Cells
Advanced Electronic Materials, EarlyView.A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco +5 more
wiley +1 more source