Results 61 to 70 of about 2,451 (213)

Neural network learning using non-ideal resistive memory devices

open access: yesFrontiers in Nanotechnology, 2022
We demonstrate a modified stochastic gradient (Tiki-Taka v2 or TTv2) algorithm for deep learning network training in a cross-bar array architecture based on ReRAM cells.
Youngseok Kim   +9 more
doaj   +1 more source

Design and Evaluation of Monolithic Computers Implemented Using Crossbar ReRAM [PDF]

open access: yes, 2019
A monolithic computer is an emerging architecture in which a multicore CPU and a high-capacity main memory system are all integrated in a single die. We believe such architectures will be possible in the near future due to nonvolatile memory technology ...
Singh, Devesh   +8 more
core   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

ReGra: Accelerating Graph Traversal Applications Using ReRAM With Lower Communication Cost

open access: yesIEEE Access, 2020
There is a growing gap between data explosion speed and the improvement of graph processing systems on conventional architectures. The main reason lies in the large overhead of random access and data movement, as well as the unbalanced and unordered ...
Haoqiang Liu   +3 more
doaj   +1 more source

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

open access: yesNanomaterials, 2021
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar   +5 more
doaj   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

An Energy-Efficient Digital ReRAM-Crossbar-Based CNN With Bitwise Parallelism

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017
There is great attention to develop hardware accelerator with better energy efficiency, as well as throughput, than GPUs for convolutional neural network (CNN). The existing solutions have relatively limited parallelism as well as large power consumption
Leibin Ni   +3 more
doaj   +1 more source

The State Change Per Cycle Map: a novel system-theoretic analysis tool for periodically-driven ReRAM cells

open access: yesFrontiers in Electronic Materials, 2023
Memristive devices are the subject of extensive studies nowadays. While the Dynamic Route Map is a powerful tool for analyzing the response of first-order memristors under DC stimuli, the development of an equivalent tool for investigating the response ...
A. Ascoli   +5 more
doaj   +1 more source

Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

open access: yes, 2013
Nonvolatile redox-based resistive RAM (ReRAM) is considered to be a promising candidate for passive nanocrossbar integration. For this application, a high degree of nonlinearity in I-V characteristics of the ReRAM device is required.
Wouters, Dirk J.   +5 more
core   +1 more source

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