Results 71 to 80 of about 2,956 (211)

ReRAM 기반 심층 신경망 가속기의 비이상성 해결을 위한 프레임워크

, 2023
학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2023.2,[vi, 74 p. :]Processing in-memory (PIM) approaches have emerged to address the memory wall problem of the conventional Deep Neural Network (DNN) accelerators.
Shin, Hyein
core  

Investigation on the Impact of Memristive Device Variability on Uncoupled Memristive Cellular Nonlinear Networks

Advanced Electronic Materials, EarlyView.
Memristors, nanoscale devices that compute and store data in the same place, promise compact, energy‐efficient image‐processing hardware, yet no two devices behave exactly alike. Simulations based on real device measurements show that a 256‐cell memristive cellular nonlinear network (M‐CellNN) detects image edges perfectly despite this variability and ...
Salwa Yasmeen Neyaz, Kristoffer Schnieders, Yongmin Wang, Alon Ascoli, Ioannis Messaris, Ronald Tetzlaff, Vasileios Ntinas, Ricardo Carmona Galán, Stefan Wiefels, Vikas Rana, Stephan Menzel   +10 more
wiley   +1 more source

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

, 2018
The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed,
Hwang, H, Lee, D, Woo, J, Park, J, Lee, S, Cha, E   +5 more
core   +1 more source

Demonstration of transfer learning using 14 nm technology analog ReRAM array

Frontiers in Electronics
Analog memory presents a promising solution in the face of the growing demand for energy-efficient artificial intelligence (AI) at the edge. In this study, we demonstrate efficient deep neural network transfer learning utilizing hardware and algorithm co-
Fabia Farlin Athena, Omobayode Fagbohungbe, Nanbo Gong, Malte J. Rasch, Jimmy Penaloza, SoonCheon Seo, Arthur Gasasira, Paul Solomon, Valeria Bragaglia, Steven Consiglio, Hisashi Higuchi, Chanro Park, Kevin Brew, Paul Jamison, Christopher Catano, Iqbal Saraf, Claire Silvestre, Xuefeng Liu, Babar Khan, Nikhil Jain, Steven McDermott, Rick Johnson, I. Estrada-Raygoza, Juntao Li, Tayfun Gokmen, Ning Li, Ruturaj Pujari, Fabio Carta, Hiroyuki Miyazoe, Martin M. Frank, Antonio La Porta, Devi Koty, Qingyun Yang, Robert D. Clark, Kandabara Tapily, Cory Wajda, Aelan Mosden, Jeff Shearer, Andrew Metz, Sean Teehan, Nicole Saulnier, Bert Offrein, Takaaki Tsunomura, Gert Leusink, Vijay Narayanan, Takashi Ando   +45 more
doaj   +1 more source

Negative Feedback in Hf0.5Zr0.5O2 Resistive Memory: Feigenbaum Route Toward Two‐Terminal Pseudo‐Random Number Generation and Neural Network Instabilities

Advanced Electronic Materials, EarlyView.
Resistively switching TiN/Hf0.5Zr0.5/Au valance‐change memory devices show period‐doubling bifurcations, arising from competing influences of filamentary counter‐eightwise filamentary switching and eigthwise electrochemical oxygen exchange at the active electrode.
Sebastian Obernberger, Yoandris Gonzalez, Andranik Sarkissian, Christina Schindler, Andreas Ruediger   +4 more
wiley   +1 more source

Low power memristor-based ReRAM design with Error Correcting Code

, 2012
The emerging memristor-based Resistive RAM (ReRAM) has shown great potential as one of the most promising memory technologies, with the unique properties such as high density, low-power, good-scalability, and non-volatility.
Yang Xiao, Niu, Dimin, Yuan Xie, Xie, Yuan, Xiao, Yang, Dimin Niu   +5 more
core   +1 more source

Honey-ReRAM Enabled Sustainable Edge AI System for IoT Applications

IEEE Access
This paper is toward a promising solution to address the environmental sustainability challenge in computing by building brain-inspired and green non-Von Neumann systems with Resistive Random-Access Memory (ReRAM) made from natural organic materials ...
Jinhui Wang, Feng Zhao, Mohammad Rafeeq Khan, Md. Mehedi Hasan Tanim, Zoe Templin, Harshvardhan Uppaluru   +5 more
doaj   +1 more source

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

Advanced Intelligent Systems, 2022
As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai, She-Hwa Yen, Apurva Uppala, Luke Thomas, Tianchi Liu, Peter Fu, Xiaofeng Zhang, Ambrose Low, Deepak Kamalanathan, Joe Hsu, Buvna Ayyagari-Sangamalli   +10 more
doaj   +1 more source

Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force

Advanced Intelligent Systems, EarlyView.
A volatile‐switching compact model of electrochemical metallization memory cells for neuromorphic architecture is developed and validated by reliable reproduction of device characterization measurements: I−V sweeps, SET kinetics, relaxation dynamics.
Rana Walied Ahmad, Solomon Amsalu Chekol, Julius Rasbach, Susanne Hoffmann‐Eifert, Stephan Menzel   +4 more
wiley   +1 more source

Origin, verification, and device‐level impacts of p‐doping in two‐dimensional transition metal dichalcogenides

InfoMat, EarlyView.
This review provides a comprehensive perspective on p‐doping in two‐dimensional transition metal dichalcogenides, linking the origins of carrier polarity, doping mechanisms, verification methodologies, and device‐level impacts. By establishing correlations among atomic‐scale doping, carrier modulation, and device functionality, it offers practical ...
Seo Yeon Han, Hye In Choi, Ji Yeon Kim, Wenhu Shen, Yong Soo Cho   +4 more
wiley   +1 more source