Results 71 to 80 of about 716 (180)

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Advanced Electronic Materials
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan, Sumit Choudhary, Satinder K. Sharma   +2 more
doaj   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi, David B. Thomas, Harold M. H. Chong, Firman M. Simanjuntak   +3 more
wiley   +1 more source

GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays

AIP Advances
In this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo, June Hyuk Lee, Min Kyu Yang   +2 more
doaj   +1 more source

Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics

Applied Sciences, 2019
Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal.
Niloufar Raeis-Hosseini, Junsuk Rho
doaj   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials
No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance.
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
doaj   +1 more source

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang, Mengxin Zheng, Shengyu Fan, Qian Lou, Rui Hou, Dan Meng, Mingzhe Zhang   +6 more
doaj   +1 more source

Lead-free all-inorganic halide perovskites for resistive switching memory: Mechanisms and emerging applications

Journal of Science: Advanced Materials and Devices
Halide perovskites (HPs) have been recognized as promising materials for next-generation non-volatile memories, particularly resistive random-access memory (ReRAM).
Geon Kim, Jongin Lee, Seong Ju Hwang, Do Yeon Heo, Jong-Hoon Kang, Hyojung Kim   +5 more
doaj   +1 more source

Nanoparticles-array-air spacer passivated memristor with high on/off ratio and low reset current density

Nano Research
Non-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing.
Dong Li, Yawen Wang, Wanyu Lu, Xinpeng Wang, Chang Liu, Haseeb Ur Rehman, Bo Zhao, Weijing Shao, Yu Wang, Oleksandr Ivasenko, Yinghui Sun, Yandong Wang, Lin Jiang   +12 more
doaj   +1 more source

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

AIP Advances, 2019
We measured X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects (AlOx) which exhibits the resistance random access memory (ReRAM) effect. We were able to detect changes in the electronic structure owing to the ReRAM effect.
Masato Kubota, Seisuke Nigo, Seiichi Kato, Kenta Amemiya   +3 more
doaj   +1 more source