Results 51 to 60 of about 2,451 (213)
Advanced Functional Materials, EarlyView.Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son +5 more
wiley +1 more source
Ising-ReRAM: A Low Power Ising Machine ReRAM Crossbar for NP Problems
CoRR4 pages + 1 page reference, 4 figures, 2 tables, targeting IEEE conference (e.g. ISCAS)
Everest Bloomer +3 more
openaire +2 more sources
, 2014 This deliverable D6.1 reports on the progress of the website development, which has been setup in multiple languages to attain a maximum of different target audiences.
Kies, Uwe, Akhobadze, Sophiko
openaire +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Advanced Science, EarlyView.Tunable dynamics of an interface‐type memristor array enabled by dual‐ion modulation through Ag nanoclusters are demonstrated. A 32 × 32 one‐resistor (1R) array exhibits 100% yield with high temporal/spatial uniformity (<3%) and a rectification ratio of 105.
Yoonho Cho +7 more
wiley +1 more source
Determining the Electrical Charging Speed Limit of ReRAM Devices
IEEE Journal of the Electron Devices Society, 2021 Redox-based random-access memory (ReRAM) has the potential to successfully address the technological barriers that today’s memory technologies face. One of its promising features is its fast switching speed down to 50 ps.
M. von Witzleben +4 more
doaj +1 more source
A circuit-level SPICE modeling strategy for the simulation of behavioral variability in ReRAM [PDF]
, 2022 © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Vourkas, Ioannis +2 more
core +1 more source
RRAM Variability Harvesting for CIM‐Integrated TRNG
Advanced Electronic Materials, EarlyView.This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende +4 more
wiley +1 more source
Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk
Advanced Electronic Materials, 2023 A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun +2 more
doaj +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source