Results 51 to 60 of about 2,956 (211)
Battery‐Inspired Electrochemical Synapses for Neuromorphic Applications
Advanced Science, EarlyView.Battery‐ion‐inspired synaptic devices integrate diverse electrolyte systems (solid, ion‐gel, liquid) with transition metal oxides, two‐dimensional materials, and organic channels to regulate ion‐electron coupling. By tailoring ion transport and host interactions, these platforms enable controllable plasticity and energy‐efficient implementations for ...
Won Woo Lee +6 more
wiley +1 more source
Single-Event Effect Performance of a Commercial ReRAM [PDF]
, 2014 We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets.
LaBel, Kenneth +7 more
core
, 2014 This deliverable D6.1 reports on the progress of the website development, which has been setup in multiple languages to attain a maximum of different target audiences.
Kies, Uwe, Akhobadze, Sophiko
openaire +1 more source
Advanced Science, EarlyView.Au nanoisland morphology defines stochastic high‐resistance‐state transport in Ag/TiO2 memristor arrays, transforming nanoscale structural disorder into a tunable physical entropy resource. Morphology‐controlled field hotspots and reset‐modulated nanogaps generate statistically validated random‐bit streams, which further serve as device‐derived ...
Hyunjun Kim +5 more
wiley +1 more source
ReRAM-based neuromorphic computing
, 2016 Artificial neural networks are intended to solve complex machine-learning tasks by using massive parallel data processing in a similar way as in biological neural systems.
Stefano Ambrogio +5 more
core +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
Determining the Electrical Charging Speed Limit of ReRAM Devices
IEEE Journal of the Electron Devices Society, 2021 Redox-based random-access memory (ReRAM) has the potential to successfully address the technological barriers that today’s memory technologies face. One of its promising features is its fast switching speed down to 50 ps.
M. von Witzleben +4 more
doaj +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Single-Event Effect Response of a Commercial ReRAM [PDF]
, 2014 We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense ...
Label, Kenneth A. +7 more
core
Advanced Electronic Materials, EarlyView.In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source