Results 51 to 60 of about 241 (114)

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang, Mengxin Zheng, Shengyu Fan, Qian Lou, Rui Hou, Dan Meng, Mingzhe Zhang   +6 more
doaj   +1 more source

Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons

Communications Engineering
Resistive Random Access Memories (ReRAM) arrays provides a promising basement to deploy neural network accelerators based on near or in memory computing.
Mona Ezzadeen, Atreya Majumdar, Olivier Valorge, Niccolo Castellani, Valentin Gherman, Guillaume Regis, Bastien Giraud, Jean-Philippe Noel, Valentina Meli, Marc Bocquet, Francois Andrieu, Damien Querlioz, Jean-Michel Portal   +12 more
doaj   +1 more source

A keyword-based approach to analyzing scientific research trends: ReRAM present and future

Scientific Reports
Research trend analysis is a primary step in defining research structures and predicting research directions from scientific papers. Recently, due to millions of annual scientific publications, researchers demand analytical methods to interpret the ...
Hyeon Kim, Seong Hun Kim, Jaeseon Kim, Eun Ho Kim, Jun Hyeong Gu, Donghwa Lee   +5 more
doaj   +1 more source

Nanoparticles-array-air spacer passivated memristor with high on/off ratio and low reset current density

Nano Research
Non-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing.
Dong Li, Yawen Wang, Wanyu Lu, Xinpeng Wang, Chang Liu, Haseeb Ur Rehman, Bo Zhao, Weijing Shao, Yu Wang, Oleksandr Ivasenko, Yinghui Sun, Yandong Wang, Lin Jiang   +12 more
doaj   +1 more source

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

AIP Advances, 2019
We measured X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects (AlOx) which exhibits the resistance random access memory (ReRAM) effect. We were able to detect changes in the electronic structure owing to the ReRAM effect.
Masato Kubota, Seisuke Nigo, Seiichi Kato, Kenta Amemiya   +3 more
doaj   +1 more source

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

Electronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

NeoHebbian synapses to accelerate online training of neuromorphic hardware

Scientific Reports
Neuromorphic systems that employ advanced synaptic learning rules, such as the three-factor learning rule, require synaptic devices of increased complexity.
S. Pande, S. S. Bezugam, T. Bhattacharya, E. Wlazlak, A. Chakravorty, B. Chakrabarti, D. Strukov   +6 more
doaj   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen   +3 more
doaj   +1 more source

Lead-free Cs2CuBiCl6 double perovskite for ReRAM: Electrode-dependent resistive switching and performance analysis

Memories - Materials, Devices, Circuits and Systems
Resistive Random-Access Memory (ReRAM) is a promising technology for next-generation non-volatile memory and neuromorphic computing due to its scalability, low power consumption, and rapid switching.
Rajib Sutradhar, Chinmaya Kumar Pradhan, Himangshu Jyoti Gogoi, Pukhrambam Puspa Devi, Kuldeep Gogoi, Dipjyoti Das   +5 more
doaj   +1 more source

True Random Number Generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs

2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2023
Tanay Patni, Abhijit Pethe
openaire   +1 more source