Results 31 to 40 of about 2,451 (213)
The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory
Micromachines, 2022 With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that ...
Ricky Wenkuei Chuang +2 more
doaj +1 more source
High-Performance InGaZnO-Based ReRAMs [PDF]
IEEE Transactions on Electron Devices, 2019 Amorphous indium–gallium–zinc oxide (IGZO) is one of the most promising oxide semiconductors for thin–film transistors and it has started to replace amorphous silicon in display drivers. However, attempts to use IGZO in resistive random–access memories (ReRAMs) are still scarce.
Pengfei Ma +6 more
openaire +3 more sources
Fabrication and characterisation of SiOₓ ReRAM devices [PDF]
, 2022 Silicon oxide (SiOx) based resistive random access memory (ReRAM) devices are capable of changing resistance reversibly, making them ideal candidates for next generation memory.
Zhao, Longfei
core
Analog Weights in ReRAM DNN Accelerators [PDF]
2019 IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 2019 2019 IEEE International Conference on Artificial Intelligence Circuits and Systems, 5 pages, 4 ...
Jason Kamran Eshraghian +5 more
openaire +2 more sources
PRAP-PIM: A weight pattern reusing aware pruning method for ReRAM-based PIM DNN accelerators
High-Confidence Computing, 2023 Resistive Random-Access Memory (ReRAM) based Processing-in-Memory (PIM) frameworks are proposed to accelerate the working process of DNN models by eliminating the data movement between the computing and memory units.
Zhaoyan Shen +5 more
doaj +1 more source
Analytic and SPICE modeling of stochastic ReRAM circuits [PDF]
International Conference on Micro- and Nano-Electronics 2021, 2022 to be published the Proceedings of SPIE dedicated to ICMNE ...
V. J. Dowling +2 more
openaire +3 more sources
Science and Technology of Advanced Materials, 2016 We have studied the stability of the resistive switching process in the Al/(In2O3)0.9(SnO2)0.1/TiO2 assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO2
Elena Filatova +6 more
doaj +1 more source
ARIA: Additive ReRAM-Based Integrity and Aging Monitoring for ICs
IEEE AccessThis paper reports an approach for monitoring aging and integrity of CMOS circuits through additively manufactured Resistive Random-Access Memory (ReRAM) based test structures.
Thomas Schultz +3 more
doaj +1 more source
A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications
IEEE Open Journal of Circuits and Systems, 2021 Resistive random access memory (ReRAM)-based computing in-memory (CIM) is a promising solution to overcome the von-Neumann bottleneck in conventional computing architectures. We propose a reconfigurable ReRAM architecture using a novel 4T2R bit-cell that
Yuzong Chen +3 more
doaj +1 more source
Advanced Intelligent Systems, 2020 Herein, a feasible method is provided for circuit implementation of the convolutional neural network (CNN) in neuromorphic hardware using the multiple layers‐stacked resistance switching random access memory (ReRAM).
Yumin Kim +8 more
doaj +1 more source