Results 11 to 20 of about 241 (114)
APL Materials, 2021 The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices.
Horatio R. J. Cox +7 more
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A Data-Driven Verilog-A ReRAM Model [PDF]
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2018 The translation of emerging application concepts that exploit resistive random access memory (ReRAM) into large-scale practical systems requires realistic yet computationally efficient device models. Here, we present a ReRAM model, where device current–voltage characteristics and resistive switching rate are expressed as a function of: 1) bias voltage ...
Ioannis Messaris +5 more
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XMA2: A crossbar-aware multi-task adaption framework via 2-tier masks
Frontiers in Electronics, 2022 Recently, ReRAM crossbar-based deep neural network (DNN) accelerator has been widely investigated. However, most prior works focus on single-task inference due to the high energy consumption of weight reprogramming and ReRAM cells’ low endurance issue ...
Fan Zhang +5 more
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Exploiting device-level non-idealities for adversarial attacks on ReRAM-based neural networks
Memories - Materials, Devices, Circuits and Systems, 2023 Resistive memory (ReRAM) or memristor devices offer the prospect of more efficient computing. While memristors have been used for a variety of computing systems, their usage has gained significant popularity in the domain of deep learning.
Tyler McLemore +5 more
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Nanoscale Research Letters, 2022 Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan +2 more
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ReRAM technology; challenges and prospects
IEICE Electronics Express, 2012 We review recent progresses in Resistive Random Access Memory (ReRAM) technologies together with difficult challenges and prospects. ReRAM is one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities.
Hiro Akinaga, Hisashi Shima
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Parallel Computing of Graph-based Functions in ReRAM [PDF]
ACM Journal on Emerging Technologies in Computing Systems, 2022 Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory technology. Besides its low power consumption and its high scalability, its inherent computation capabilities make ReRAM especially interesting for future computer architectures. Merging computations into the memory is a promising solution for overcoming the memory bottleneck.
Saman Fröhlich +2 more
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The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory
Micromachines, 2022 With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that ...
Ricky Wenkuei Chuang +2 more
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RED: A ReRAM-based Deconvolution Accelerator [PDF]
2019 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2019 2019 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Fan, Zichen +5 more
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High-Performance InGaZnO-Based ReRAMs [PDF]
IEEE Transactions on Electron Devices, 2019 Amorphous indium–gallium–zinc oxide (IGZO) is one of the most promising oxide semiconductors for thin–film transistors and it has started to replace amorphous silicon in display drivers. However, attempts to use IGZO in resistive random–access memories (ReRAMs) are still scarce.
Pengfei Ma +6 more
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