Results 91 to 100 of about 2,451 (213)
Applied Sciences, 2019 Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal.
Niloufar Raeis-Hosseini, Junsuk Rho
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Channel-wise lowering of ONNX-based deep learning models for ReRAM architectures [PDF]
LAUREA MAGISTRALEI modelli di deep learning richiedono un'enorme quantità di potenza computazionale e data movement, creando sfide significative per le architetture di calcolo tradizionali.
Miotti, Michele
core
ReRAM 기반 심층 신경망 가속기의 비이상성 해결을 위한 프레임워크
, 2023 학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2023.2,[vi, 74 p. :]Processing in-memory (PIM) approaches have emerged to address the memory wall problem of the conventional Deep Neural Network (DNN) accelerators.
Shin, Hyein
core
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices [PDF]
, 2019 Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed operation, the high density CMOS-compatible integration, and the high cycling endurance, the ...
Ambrosi E. +3 more
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Advanced TCAD modeling of HfO$_2$-based ReRAM: voupling redox reactions and thermal effects
, 2023 International audienceThis paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the essential redox reactions ...
Blaise, Philippe +5 more
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Advanced Electronic MaterialsResistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan +2 more
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Verification of In-Memory Logic Design using ReRAM Crossbars
, 2023 Resistive Random Access Memory (ReRAM) technologies enable the development of innovative architectures for in-memory computing. Many logic design styles, like Imply, Magic or Majority, have been explored for mapping Boolean functions to ReRAM crossbars ...
Deb, Arighna +5 more
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GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays
AIP AdvancesIn this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo +2 more
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ReRAM From Material Study to CMOS Co-integration
, 2019 The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm ...
Shahrabi, Elmira
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Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator
CybersecurityThe Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang +6 more
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