Results 91 to 100 of about 2,956 (211)

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Nonvolatile memory devices play a key role in enabling energy-efficient computing. Among them, analog nonvolatile memories such as resistive random access memory (ReRAM) offer high density and low power compared to conventional digital memories. However,
Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah   +3 more
doaj   +1 more source

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Advanced Electronic Materials
Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications.
Manvendra Chauhan, Sumit Choudhary, Satinder K. Sharma   +2 more
doaj   +1 more source

An Automatic ReRAM SPICE Model Generation Methodology for ReRAM-Circuit Co-Simulation

, 2017
MasterThis paper presents an automatic ReRAM SPICE model generation methodology which enables true ReRAM-circuit co-simulation in standard SPICE. In our method, a model generation tool automatically produces SPICE models of various ReRAM devices and ...
서재현
core  

Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process [PDF]

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and ...
Demirci, Tugba, De Micheli, Giovanni, Sandrini, Jury, Sacchetto, Davide, Thammasack, Maxime Victor, Gaillardon, Pierre-Emmanuel Julien Marc, Leblebici, Yusuf   +6 more
core   +1 more source

ReFloat: Low-Cost Floating-Point Processing in ReRAM for Accelerating Iterative Linear Solvers [PDF]

, 2023
Resistive random access memory (ReRAM) is a promising technology that can perform low-cost and in-situ matrix-vector multiplication (MVM) in analog domain. Scientific computing requires high-precision floating-point (FP) processing.
Qian, Xuehai, Song, Linghao, Chen, Fan, Chen, Yiran, Li, Hai   +4 more
core  

GeSeTe-based OTS selector integrated with ReRAM for high-density 1S-1R memory arrays

AIP Advances
In this study, we developed a high-performance binary Ovonic Threshold Switching (OTS) selector based on GeSeTe and a resistive random access memory (ReRAM) device based on TaOx.
Hyun Kyu Seo, June Hyuk Lee, Min Kyu Yang   +2 more
doaj   +1 more source

Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics

Applied Sciences, 2019
Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal.
Niloufar Raeis-Hosseini, Junsuk Rho
doaj   +1 more source

Finite State Automata Design using 1T1R ReRAM Crossbar [PDF]

, 2023
Data movement costs constitute a significant bottleneck in modern machine learning (ML) systems. When combined with the computational complexity of algorithms, such as neural networks, designing hardware accelerators with low energy footprint remains ...
Yakovlev, Alex, Ghazal, Omar, Jha, Chandan Kumar, Rana, Vikas, Singh, Simranjeet, Shafik, Rishad, Merchant, Farhad, Drechsler, Rolf, Patkar, Sachin   +8 more
core  

Corrosion Hammer: a self-activated bit-flip attack to the processing-in-memory accelerator

Cybersecurity
The Resistive Random-Access-Memory (ReRAM) crossbar-based Processing-In-Memory (PIM) accelerator shows great promise in accelerating neural networks (NNs).
Zihao Yang, Mengxin Zheng, Shengyu Fan, Qian Lou, Rui Hou, Dan Meng, Mingzhe Zhang   +6 more
doaj   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials
No two fabricated Resistive Random Access Memory (ReRAM) devices are alike. Each device can have its own individual optimal set of operating parameters that gives the best performance.
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
doaj   +1 more source