Results 101 to 110 of about 2,956 (211)

Lead-free all-inorganic halide perovskites for resistive switching memory: Mechanisms and emerging applications

Journal of Science: Advanced Materials and Devices
Halide perovskites (HPs) have been recognized as promising materials for next-generation non-volatile memories, particularly resistive random-access memory (ReRAM).
Geon Kim, Jongin Lee, Seong Ju Hwang, Do Yeon Heo, Jong-Hoon Kang, Hyojung Kim   +5 more
doaj   +1 more source

Edge AI with ReRAM-based in-memory computing and ReRAM-aware neural architecture search

Deep neural networks (DNNs) underpin many advanced applications, with performance often scaling with size and complexity. Conventional computing architectures struggle with the demands of DNNs, leading to inefficiencies and higher costs.
Loong, Kam Chi, 龍錦賜
core  

Nanoparticles-array-air spacer passivated memristor with high on/off ratio and low reset current density

Nano Research
Non-volatile resistive random-access memory (ReRAM) is a promising candidate for next-generation information storage, such as radiation-resistant memory modules and multifunctional memristor for sensing, data storage, and computing.
Dong Li, Yawen Wang, Wanyu Lu, Xinpeng Wang, Chang Liu, Haseeb Ur Rehman, Bo Zhao, Weijing Shao, Yu Wang, Oleksandr Ivasenko, Yinghui Sun, Yandong Wang, Lin Jiang   +12 more
doaj   +1 more source

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

AIP Advances, 2019
We measured X-ray absorption spectra of amorphous alumina with vacancy-type oxygen defects (AlOx) which exhibits the resistance random access memory (ReRAM) effect. We were able to detect changes in the electronic structure owing to the ReRAM effect.
Masato Kubota, Seisuke Nigo, Seiichi Kato, Kenta Amemiya   +3 more
doaj   +1 more source

Electrical Characterization of ReRAM Devices for High-Density Memory Applications

, 2016
DoctorConventional charge-based memories such as NAND, NOR Flash memory, and DRAM have faced scalability limit due to severe cross-talk, noise, and 6F2 structure. To solve the limitations and problems, several emerging non-volatile memories: phase-change
이상헌
core  

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

Electronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen   +3 more
doaj   +1 more source

Lead-free Cs2CuBiCl6 double perovskite for ReRAM: Electrode-dependent resistive switching and performance analysis

Memories - Materials, Devices, Circuits and Systems
Resistive Random-Access Memory (ReRAM) is a promising technology for next-generation non-volatile memory and neuromorphic computing due to its scalability, low power consumption, and rapid switching.
Rajib Sutradhar, Chinmaya Kumar Pradhan, Himangshu Jyoti Gogoi, Pukhrambam Puspa Devi, Kuldeep Gogoi, Dipjyoti Das   +5 more
doaj   +1 more source

Total Ionizing Dose Test Report for the MB85AS4MT ReRAM [PDF]

, 2017
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Random Access Memory (ReRAM)
LaBel, Kenneth, Chen, Dakai, Wilcox, Edward   +2 more
core  

True Random Number Generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs

2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2023
Tanay Patni, Abhijit Pethe
openaire   +1 more source