CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications
Advanced Electronic MaterialsHfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang +3 more
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Fabrication and Pseudo-Analog Characteristics of Ta2O5 -Based ReRAM Cell [PDF]
, 2016 Memristori on yksi elektroniikan peruskomponenteista vastuksen, kondensaattorin ja kelan lisäksi. Se on passiivinen komponentti, jonka teorian kehitti Leon Chua vuonna 1971.
Grönroos, Mika
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True Random Number Generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs
2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2023 Tanay Patni, Abhijit Pethe
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Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices
Materials Today SustainabilityHalide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
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Single-Event Effect Response of a Commercial ReRAM
, 2014 We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense ...
Label, Kenneth A. +7 more
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Electrical Characterization of ReRAM Devices for High-Density Memory Applications
, 2016 DoctorConventional charge-based memories such as NAND, NOR Flash memory, and DRAM have faced scalability limit due to severe cross-talk, noise, and 6F2 structure. To solve the limitations and problems, several emerging non-volatile memories: phase-change
이상헌
core
Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process
This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and ...
Demirci, Tugba +6 more
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Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks [PDF]
We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integrated into the Back End of Line (BEOL) of CMOS technology, is leveraged to
Bragaglia, Valeria +10 more
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Statistical analysis of resistive switching characteristics in ReRAM test arrays
, 2014 The design and the manufacturing of ReRAM test structures allow deeper insight in the performance of the FORMING, RESET, and SET operations at array level, providing details on the process induced variability of the technology, and on the potential ...
Cristian Zambelli +17 more
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A Fully Automated Platform for Evaluating ReRAM Crossbars
2024 IEEE 25th Latin American Test Symposium (LATS)Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications.
Rebecca Pelke +8 more
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