Results 81 to 90 of about 716 (180)

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

Electronic Materials
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen   +3 more
doaj   +1 more source

Lead-free Cs2CuBiCl6 double perovskite for ReRAM: Electrode-dependent resistive switching and performance analysis

Memories - Materials, Devices, Circuits and Systems
Resistive Random-Access Memory (ReRAM) is a promising technology for next-generation non-volatile memory and neuromorphic computing due to its scalability, low power consumption, and rapid switching.
Rajib Sutradhar, Chinmaya Kumar Pradhan, Himangshu Jyoti Gogoi, Pukhrambam Puspa Devi, Kuldeep Gogoi, Dipjyoti Das   +5 more
doaj   +1 more source

True Random Number Generator Implemented in ReRAM Crossbar Based on Static Stochasticity of ReRAMs

2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2023
Tanay Patni, Abhijit Pethe
openaire   +1 more source

Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices

Materials Today Sustainability
Halide perovskite-based resistive random-access memory (ReRAM), a next-generation non-volatile memory option, has attracted a lot of attention due to the search for environmentally friendly and adaptive electronics.
Geon Kim, Hyojung Kim
doaj   +1 more source

Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]

Nano Lett
Solomon P, Kaniselvan M, Miyazoe H, Khan B, Ando T, Luisier M.   +5 more
europepmc   +1 more source

PdNeuRAM: forming-free, multi-bit Pd/HfO₂ ReRAM for energy-efficient neuromorphic computing. [PDF]

Commun Eng
Hua E, Spyrou T, Ahmadi M, Syed AM, Xun H, Braic L, Wehbe N, van der Veer E, Elatab N, Gebregiorgis A, Gaydadjiev G, Noheda B, Hamdioui S, Ishihara R, Abunahla H.   +14 more
europepmc   +1 more source

Soft Probe Electrical Contact: Eliminating Electrode Deposition and Enabling Reliable Measurements of Emerging Materials. [PDF]

Materials (Basel)
Yoshitake M, Kinoshita K, Matsuo H, Sakai S, Li S.   +4 more
europepmc   +1 more source

Morphology analysis of the reconstruction of nano-filaments during aborted reset operation in Cu-based ReRAM devices. [PDF]

Sci Rep
Yasmeen S, DiFilippo A, Orlowski M.
europepmc   +1 more source

Efficient next-generation reservoir computing: An analog in-memory implementation using memristor crossbar arrays. [PDF]

iScience
Lin Z, Wu X, Chen Z, Zhang J, Deng J, Feng Y.   +5 more
europepmc   +1 more source