Results 31 to 40 of about 10,864,876 (268)
A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM
IEEE Access, 2018 Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures.
He Zhang +4 more
doaj +1 more source
Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE
, 2012 Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang +5 more
core +1 more source
IEEE Access, 2021 Monolithic 3D (M3D) integration has been emerged as a promising technology for fine-grained 3D stacking. As the M3D integration offers extremely small dimension of via in a nanometer-scale, it is beneficial for small microarchitectural blocks such as ...
Young-Ho Gong
doaj +1 more source
Non-volatile SRAM memory cells based on ReRAM technology
, 2020 International audienceStatic Random-Access Memories (SRAMs) are very common in today's chip industry due to their speed and power consumption but are classified as volatile memories. Non-Volatile SRAMs (nvSRAMs) combine SRAM features with non-volatility.
Aziza, Hassen +3 more
core +1 more source
Design and Evaluation of a 28-nm FD-SOI STT-MRAM for Ultra-Low Power Microcontrollers
IEEE Access, 2019 The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of systems-on-chip has significantly increased due to the high-density integration and the high leakage power of current ...
Guillaume Patrigeon +5 more
doaj +1 more source
NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing
ProceedingsResearch on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj +1 more source
IET Computers & Digital Techniques, 2021 As a promising alternative to dynamic RAM, phase change memory (PCM) suffers from limited write endurance. Therefore, many research proposals on PCM security or reliability have focussed on the possible threat of wear‐out attacks from malicious ...
Xianzhong Zhou, Ying Wang
doaj +1 more source
GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching
Advanced Functional Materials, EarlyView.The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich +13 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park +7 more
wiley +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source