Results 51 to 60 of about 10,351,284 (240)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada   +11 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

open access: yesAdvanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar   +9 more
wiley   +1 more source

Non-Volatile Memory Adaptation in Asynchronous Microcontroller for Low Leakage Power and Fast Turn-on Time [PDF]

open access: yes, 2021
This dissertation presents an MSP430 microcontroller implementation using Multi-Threshold NULL Convention Logic (MTNCL) methodology combined with an asynchronous non-volatile magnetic random-access-memory (RAM) to achieve low leakage power and fast turn ...
Habimana, Jean Pierre Thierry
core   +3 more sources

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

TTEC: Data Allocation Optimization for Morphable Scratchpad Memory in Embedded Systems

open access: yesIEEE Access, 2018
Scratchpad memory (SPM) is widely utilized in many embedded systems as a software-controlled on-chip memory to replace the traditional cache. New non-volatile memory (NVM) has emerged as a promising candidate to replace SRAM in SPM, due to its ...
Linbo Long   +3 more
doaj   +1 more source

On using network RAM as a non‐volatile buffer

open access: yes, 1999
Summarization: File systems and databases usually make several synchronous disk write accesses in order to make sure that the disk always has a consistent view of their data, so that it can be recovered in the case of a system crash.
Gregory Maglis   +4 more
core   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

Rolfe (Daniellia oliveri) seed meal as a protein source in locally produced concentrates for lambs fed low quality basal diet

open access: yesJournal of the Saudi Society of Agricultural Sciences, 2019
The objective of this study was to determine the effects of replacing different levels of toasted Daniellia oliveri seed meal (TDS) for groundnut cake (GNC) in the diets of fifteen growing 8-month-old ram-lambs (13 ± 0.25 kg body weight (BW)) on growth ...
Sunday Adewale Okunade   +1 more
doaj   +1 more source

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

open access: yesAdvanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco   +5 more
wiley   +1 more source

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