Results 41 to 50 of about 10,351,284 (240)

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

open access: yesAdvanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami   +5 more
wiley   +1 more source

L2C2: Last-level compressed-contents non-volatile cache and a procedure to forecast performance and lifetime.

open access: yesPLoS ONE, 2023
Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations wear out the ...
Carlos Escuin   +5 more
doaj   +1 more source

Multiscale Coupling From Mastication to Retronasal Aroma Perception: The PG‐DTCFN Model and Multiphysics Simulation

open access: yesAdvanced Science, EarlyView.
Using grilled lamb skewers as a model system, this work builds a multiscale coupling framework from oral processing to retronasal aroma perception, reveals dual‐kinetic release patterns and Electroencephalogram‐characterized central encoding features, and proposes an interpretable physics‐guided deep learning model validated by multiphysics simulation,
Che Shen   +12 more
wiley   +1 more source

Prey and Non-prey Arthropods Sharing a Host Plant: Effects on Induced Volatile Emission and Predator Attraction [PDF]

open access: yes, 2008
It is well established that plants infested with a single herbivore species can attract specific natural enemies through the emission of herbivore-induced volatiles.
Cornelis A. Hordijk   +13 more
core   +4 more sources

Triple‐Level Content‐Addressable Vertical NAND Flash Memory

open access: yesAdvanced Science, EarlyView.
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park   +8 more
wiley   +1 more source

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

open access: yesAdvanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim   +4 more
wiley   +1 more source

Novel Kinds of Random Access Memory and New Vulnerabilities of Computer Aids based on Them

open access: yesБезопасность информационных технологий, 2014
The article discusses vulnerabilities of computer aids based on existing RAM and mechanisms for restricting exploitation of such vulnerabilities. In addition, the article discusses features and work methods of different RAM.
Alexander Mihaylovich Korotin
doaj  

Neuromorphic computing using non-volatile memory

open access: yesAdvances in Physics: X, 2017
Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems.
Geoffrey W. Burr   +16 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song   +10 more
wiley   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

open access: yesAdvanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter   +7 more
wiley   +1 more source

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