Results 1 to 10 of about 113 (109)
EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit
IEEE Access, 2022 Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density.
Saeed Seyedfaraji +3 more
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IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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A Timing-Based Split-Path Sensing Circuit for STT-MRAM
Micromachines, 2022 Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM ...
Bayartulga Ishdorj +3 more
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Reuse Detector: Improving the Management of STT-RAM SLLCs [PDF]
The Computer Journal, 2017 Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the prime contender due to its better energy efficiency, smaller die footprint and higher scalability.
Roberto Rodríguez-Rodríguez +10 more
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IEEE Access, 2020 In Cyber-Physical-Social Systems (CPSS), large-scale data are continually generated from edge computing devices in our daily lives. These heterogeneous data collected from CPSS are urgently needed to be processed efficiently with low power consumption ...
Fanfan Shen, Chao Xu, Jun Zhang
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STT-BSNN: An In-Memory Deep Binary Spiking Neural Network Based on STT-MRAM
IEEE Access, 2021 This paper proposes an in-memory binary spiking neural network (BSNN) based on spin-transfer-torque magnetoresistive RAM (STT-MRAM). We propose residual BSNN learning using a surrogate gradient that shortens the time steps in the BSNN while maintaining ...
Van-Tinh Nguyen +3 more
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High Bandwidth and Highly Available Packet Buffer Design Using Multi-Retention Time MRAM
IEEE Access, 2023 Significant challenges are posed in the design of routers and switches by the explosive growth of internet traffic and the stringent requirements for high availability in the research area of computer networks.
Yongwoon Song, Munhyung Lee, Hyukjun Lee
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Spin-Hall Assisted STT-RAM Design and Discussion [PDF]
Proceedings of the 18th System Level Interconnect Prediction Workshop, 2016 In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM ...
Enes Eken +6 more
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On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
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A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories
Computers, 2017 Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
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