Results 31 to 40 of about 183,725 (182)

TTEC: Data Allocation Optimization for Morphable Scratchpad Memory in Embedded Systems

IEEE Access, 2018
Scratchpad memory (SPM) is widely utilized in many embedded systems as a software-controlled on-chip memory to replace the traditional cache. New non-volatile memory (NVM) has emerged as a promising candidate to replace SRAM in SPM, due to its ...
Linbo Long, Qing Ai, Xiaotong Cui, Jun Liu   +3 more
doaj   +1 more source

Low Power Design for Future Wearable and Implantable Devices

Journal of Low Power Electronics and Applications, 2016
With the fast progress in miniaturization of sensors and advances in micromachinery systems, a gate has been opened to the researchers to develop extremely small wearable/implantable microsystems for different applications.
Katrine Lundager, Behzad Zeinali, Mohammad Tohidi, Jens K. Madsen, Farshad Moradi   +4 more
doaj   +1 more source

Preventing STT-RAM Last-Level Caches from Port Obstruction

, 2014
Many new nonvolatile memory (NVM) technologies have been heavily studied to replace the power-hungry SRAM/DRAM-based memory hierarchy in today's computers.
Wang, Jue, Dong, Xiangyu, Xie, Yuan
core   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

On‐Chip Learning With Crossbar Arrays for Adaptive Edge Intelligence

Advanced Computing, Volume 1, Issue 1, December 2026.
Memristor crossbar arrays implemented on chip combines memory, computation, and learning. They allow for adapting the neural weights using the incoming sensor data. This architecture reduces data movement leading to low‐latency, energy‐efficient intelligence in edge while being reliability‐aware co‐design across devices, circuits, and algorithms that ...
Alex James
wiley   +1 more source

STT-HDC: An Efficient Time-Domain In-Memory Hyper-Dimensional Computing Design Based on STT-MRAM

IEEE Access
This paper presents an efficient in-memory hyperdimensional computing (HDC) design based on spin transfer-torque magnetoresistive RAM (STT-MRAM), named STT-HDC. A novel time-domain sense amplifier circuit is proposed that significantly simplifies Hamming
Thi-Nhan Pham, Quang-Kien Trinh, Thanh-Dat Nguyen, Ik-Joon Chang   +3 more
doaj   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, Volume 2, Issue 5, October 2026.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

낮은 에너지 소비 및 성능 오버헤드를위한 안정적인 Spin-Transfer Torque RAM (STT-RAM) 캐시

, 2020
학위논문(박사) - 한국과학기술원 : 전산학부, 2020.2,[v, 75 p. :]The demand for the increased memory size in the computer industry and the scalability challenges of the traditional memory technologies inspired the researches towards next-generation memory technologies.
Qureshi, Muhammad Avais
core   +1 more source

Device‐to‐System Perspectives on Scalable Ising Machines for Physics‐Driven Computing

Advanced Quantum Technologies, Volume 9, Issue 10, October 2026.
Emerging‐device‐based Ising machines exploit conductance programmability, intrinsic stochasticity, and oscillator dynamics as physical primitives for combinatorial optimization. This review establishes a device‐to‐system framework linking these physical properties to computational functions and crossbar‐based, stochastic p‐bit, and oscillator‐based ...
Sangwook Youn, Hwiho Hwang, Jaeung Lee, Heesu Seo, Hyungjin Kim   +4 more
wiley   +1 more source