Results 51 to 60 of about 183,725 (182)
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar +2 more
wiley +1 more source
, 2020 Energy efficiency has become one of the primary considerations in the designs of cyber-physical systems (CPS). However, CPS with static RAM (SRAM)-based processors suffers from the high leakage power issue of SRAM, thus limiting the energy efficiency of ...
Shuo-Han Chen +7 more
core +1 more source
, 2015 학위논문(석사) - 한국과학기술원 : 전산학부, 2015.8 ,[iv, 30 p. :]무어의 법칙에 따라 지속적으로 집적도가 높아졌지만, 기존 메모리 셀의 특성상 공정의 한계로 더 이상 기존 기술만으로는 집적도를 높이기가 힘들어지고 있는 추세다. 따라서 STT-RAM (Spin-Transfer Torque RAM), PCM (Phase Change Memory), ReRAM (Resistive RAM) 등의 차세대 메모리로 기존 메모리를 대체하고자 ...
Kim, Hyeonggyu, 김형규
core +1 more source
Small, Volume 22, Issue 14, 6 March 2026.A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong +21 more
wiley +1 more source
Developing Variation Aware Simulation Tools, Models, and Designs for STT-RAM [PDF]
, 2018 DEVELOPING VARIATION AWARE SIMULATION TOOLS, MODELS, AND DESIGNS FOR STT-RAM Enes Eken, PhD University of Pittsburgh, 2017 In recent years, we have been witnessing the rise of spin-transfer torque random access memory (STT-RAM) technology. There are
Eken, Enes
core
Papers in Palaeontology, Volume 12, Issue 2, March/April 2026.Abstract The fossil record of coelacanths (Actinistia) is diminished by several nominal gaps that obscure vital information pertaining to the clade's evolutionary history. Latimeriidae, the family that includes the extant coelacanth Latimeria, in addition to the Cenozoic, has an outstanding missing gap of 50 myr during the Mesozoic, with no records of ...
Jack L. Norton +4 more
wiley +1 more source
State-Transition-Aware Spilling Heuristic for MLC STT-RAM-Based Registers
, 2017 Multilevel Cell Spin-Transfer Torque Random Access Memory (MLC STT-RAM) is a promising nonvolatile memory technology to build registers for its natural immunity to electromagnetic radiation in rad-hard space environment.
Zhiyao Gong +4 more
core +1 more source
Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze +8 more
wiley +1 more source
Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE
, 2012 Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang +5 more
core +1 more source