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Developing Variation Aware Simulation Tools, Models, and Designs for STT-RAM [PDF]
DEVELOPING VARIATION AWARE SIMULATION TOOLS, MODELS, AND DESIGNS FOR STT-RAM Enes Eken, PhD University of Pittsburgh, 2017 In recent years, we have been witnessing the rise of spin-transfer torque random access memory (STT-RAM) technology. There are
Eken, Enes
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학위논문(석사) - 한국과학기술원 : 전산학부, 2015.8 ,[iv, 30 p. :]무어의 법칙에 따라 지속적으로 집적도가 높아졌지만, 기존 메모리 셀의 특성상 공정의 한계로 더 이상 기존 기술만으로는 집적도를 높이기가 힘들어지고 있는 추세다. 따라서 STT-RAM (Spin-Transfer Torque RAM), PCM (Phase Change Memory), ReRAM (Resistive RAM) 등의 차세대 메모리로 기존 메모리를 대체하고자 ...
Kim, Hyeonggyu, 김형규
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STT-RAM-Based Domain-Specific Architectures for Resource-Constrained Systems
Resource-constrained consumer devices such as embedded systems, wearables, smartphones, etc., have become some of the fastest-growing products. Unlike general-purpose systems, resource-constrained devices are expected to perform various tasks within ...
GAJARIA, DHRUV MAYUR
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Device-architecture co-optimization of STT-RAM based memory for low power embedded systems
Spin-transfer torque random access memory (STT-RAM) is a fast, scalable, durable non-volatile memory which can be embedded into standard CMOS process. A wide range of write speeds from 1ns to 100ns have been reported for STT-RAM. The switching current of
Cong Xu +11 more
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Reverse Connection of MTJ Device in STT-RAM Cell [PDF]
STT-RAM technology is an emerging memory technology which is a future replacement for conventional memory technologies. STT-RAM promises fast read-write-access speeds, low power consumption, high density, non-volatility and very long life time.
Bayram, Ismail
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Cross-Layer Optimization for Multilevel Cell STT-RAM Caches
Spin-transfer torque random access memory (STT-RAM), as an emerging nonvolatile memory technology, provides very dense array structure and extremely low leakage power consumption. It demonstrates a great potential in replacing conventional static random access memory technology to develop the next-generation on-chip cache memory of microprocessors and ...
Xiuyuan Bi +3 more
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Adaptive placement and migration policy for an STT-RAM-based hybrid cache
Emerging Non-Volatile Memories (NVM) such as Spin-Torque Transfer RAM (STT-RAM) and Resistive RAM (RRAM) have been explored as potential alternatives for traditional SRAM-based Last-Level-Caches (LLCs) due to the benefits of higher density and lower ...
Wang, Zhe +9 more
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STT-RAM memory hierarchy designs aimed to performance, reliability and energy consumption [PDF]
Current applications demand larger on-chip memory capacity since off-chip memory accesses be-come a bottleneck. However, if we want to achieve this by scaling down the transistor size of SRAM-based Last-Level Caches (LLCs) it may become prohibitive in ...
Monreal Arnal, Teresa +4 more
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Mitigating Read Disturbance Errors in STT-RAM Caches by Using Data Compression
Due to its high density and close to SRAM read latency, spin transfer torque RAM (STT-RAM) is considered one of the most promising emerging memory technologies for designing large last level caches (LLCs).
Mittal, Sparsh
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Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE
Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang +5 more
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