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Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu +3 more
wiley +1 more source
Veterinary Medicine and Science, Volume 12, Issue 4, July 2026.This study establishes reference intervals for Schirmer tear test (STT) and intraocular pressure (IOP) in healthy Hamdani crossbred sheep. STT values were lower and IOP values higher than previously reported, highlighting the importance of breed‐specific reference ranges in clinical ophthalmic evaluation.
Kadir Sulu +5 more
wiley +1 more source
DVFS-Aware Asymmetric-Retention STT-RAM Caches for Energy-Efficient Multicore Processors
, 2019 Spin-transfer torque RAMs (STT-RAMs) have been studied as a promising alternative to SRAMs in emerging caches and main memories due to their low leakage power and high density. However, STT-RAMs, also have drawbacks of high dynamic write energy and long
Gajaria, Dhruv Mayur
core +4 more sources
Veterinary Ophthalmology, Volume 29, Issue 4, July 2026.ABSTRACT Objective To evaluate the effects of season (summer vs. winter) and sex on tear production (Schirmer tear test; STT‐I) and intraocular pressure (IOP) in Honamlı and Saanen goats raised under similar environmental conditions. Materials and Methods A total of 120 clinically healthy goats (Honamlı and Saanen; 30 females and 30 males per breed ...
Eser Çakmakçi +2 more
wiley +1 more source
Error Characterization and Correction Techniques for Reliable STT-RAM Designs [PDF]
, 2015 The concerns on the continuous scaling of mainstream memory technologies have motivated tremendous investment to emerging memories. Being a promising candidate, spin-transfer torque random access memory (STT-RAM) offers nanosecond access time comparable ...
Wen, Wujie
core
Flexible Memory: Progress, Challenges, and Opportunities
Advanced Intelligent Discovery, Volume 2, Issue 2, April 2026.Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan +5 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar +2 more
wiley +1 more source
Write management mechanisms for systems with non-volatile memory technologies
Journal of Computer Science and Technology, 2017 Since the beginning of computer systems, the memory subsystem has always been one of their essential components. However, the different pace of change between microprocessor and memory has become one of the greatest challenges that current designers have
Roberto Alonso Rodríguez Rodríguez
doaj
Small, Volume 22, Issue 14, 6 March 2026.A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong +21 more
wiley +1 more source