Results 21 to 30 of about 129,221 (220)
Preventing STT-RAM Last-Level Caches from Port Obstruction [PDF]
, 2014 Many new nonvolatile memory (NVM) technologies have been heavily studied to replace the power-hungry SRAM/DRAM-based memory hierarchy in today's computers.
Wang, Jue, Dong, Xiangyu, Xie, Yuan
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Spin-Hall Assisted STT-RAM Design and Discussion [PDF]
Proceedings of the 18th System Level Interconnect Prediction Workshop, 2016 In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM ...
Enes Eken +6 more
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Restore-Free Mode for MLC STT-RAM Caches
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019 Spin-transfer torque RAM (STT-RAM) caches are foreseen to replace traditional static RAM caches because of their nonvolatile nature and high density.
Qureshi, Muhammad Avais +2 more
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SCART: Predicting STT-RAM Cache Retention Times Using Machine Learning [PDF]
, 2019 Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM\u27s write energy and latency.
Gajaria, Dhruv +2 more
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Leveraging MLC STT-RAM for energy-efficient CNN training [PDF]
Proceedings of the International Symposium on Memory Systems, 2018 Graphics Processing Units (GPUs) are extensively used in training of convolutional neural networks (CNNs) due to their promising compute capability. However, GPU memory capacity, bandwidth, and energy are becoming critical system bottlenecks with increasingly larger and deeper training models.
Hengyu Zhao, Jishen Zhao
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Error Characterization and Correction Techniques for Reliable STT-RAM Designs [PDF]
, 2015 The concerns on the continuous scaling of mainstream memory technologies have motivated tremendous investment to emerging memories. Being a promising candidate, spin-transfer torque random access memory (STT-RAM) offers nanosecond access time comparable ...
Wen, Wujie
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Evaluating STT-RAM as an energy-efficient main memory alternative [PDF]
2013 IEEE International Symposium on Performance Analysis of Systems and Software (ISPASS), 2013 In this paper, we explore the possibility of using STT-RAM technology to completely replace DRAM inmain memory. Our goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, we first analyze the performance and energy of STT-RAM, and then identify key optimizations that can be employed to ...
Emre Kültürsay +3 more
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A Statistical STT-RAM Design View and Robust Designs at Scaled Technologies [PDF]
, 2017 Rapidly increased demands for memory in electronic industry and the significant technical scaling challenges of all conventional memory technologies motivated the researches on the next generation memory technology.
Zhang, Yaojun, Chen, Yiran
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Developing Variation Aware Simulation Tools, Models, and Designs for STT-RAM [PDF]
, 2018 DEVELOPING VARIATION AWARE SIMULATION TOOLS, MODELS, AND DESIGNS FOR STT-RAM Enes Eken, PhD University of Pittsburgh, 2017 In recent years, we have been witnessing the rise of spin-transfer torque random access memory (STT-RAM) technology. There are
Eken, Enes
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PS3-RAM: A Fast Portable and Scalable Statistical STT-RAM Reliability/Energy Analysis Method
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2014 The development of emerging spin-transfer torque random access memory (STT-RAM) is facing two major technical challenges-poor write reliability and high write energy, both of which are severely impacted by process variations and thermal fluctuations. The
Wujie Wen, Yaojun Zhang, Yiran Chen
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