Results 11 to 20 of about 168,024 (182)

STT-RAM-Based Hierarchical in-Memory Computing [PDF]

open access: yesIEEE Transactions on Parallel and Distributed Systems
In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing due to its non-volatility, low leakage power, high density, endurance, and commercial viability.
Dhruv Gajaria   +2 more
openaire   +4 more sources

Evaluating STT-RAM as an energy-efficient main memory alternative [PDF]

open access: yes2013 IEEE International Symposium on Performance Analysis of Systems and Software (ISPASS), 2013
In this paper, we explore the possibility of using STT-RAM technology to completely replace DRAM inmain memory. Our goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, we first analyze the performance and energy of STT-RAM, and then identify key optimizations that can be employed to ...
Emre Kultursay   +3 more
openaire   +3 more sources

HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis [PDF]

open access: yesIEEE Access
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies.
Saeed Seyedfaraji   +3 more
doaj   +4 more sources

Binary-Weighted Neural Networks Using FeRAM Array for Low-Power AI Computing [PDF]

open access: yesNanomaterials
Artificial intelligence (AI) has become ubiquitous in modern computing systems, from high-performance data centers to resource-constrained edge devices.
Seung-Myeong Cho   +5 more
doaj   +2 more sources

L2C2: Last-level compressed-contents non-volatile cache and a procedure to forecast performance and lifetime. [PDF]

open access: yesPLoS ONE, 2023
Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations wear out the ...
Carlos Escuin   +5 more
doaj   +2 more sources

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips [PDF]

open access: yesAdvanced Science, Volume 13, Issue 37, 3 July 2026.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang   +7 more
wiley   +2 more sources

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

open access: yesIEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan   +4 more
doaj   +1 more source

A Spintronic 2M/7T Computation-in-Memory Cell

open access: yesJournal of Low Power Electronics and Applications, 2022
Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the ...
Atousa Jafari   +2 more
doaj   +1 more source

A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM

open access: yesIEEE Access, 2018
Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures.
He Zhang   +4 more
doaj   +1 more source

Reinforcing the energy efficiency of cyber-physical systems via direct and split cache consolidation on MLC STT-RAM

open access: yes, 2020
Energy efficiency has become one of the primary considerations in the designs of cyber-physical systems (CPS). However, CPS with static RAM (SRAM)-based processors suffers from the high leakage power issue of SRAM, thus limiting the energy efficiency of ...
Shuo-Han Chen   +7 more
core   +1 more source

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