Results 11 to 20 of about 183,725 (182)

HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis [PDF]

IEEE Access
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies.
Saeed Seyedfaraji, Markus Bichl, Asad Aftab, Semeen Rehman   +3 more
doaj   +4 more sources

STT-RAM-Based Hierarchical in-Memory Computing [PDF]

IEEE Transactions on Parallel and Distributed Systems
In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing due to its non-volatility, low leakage power, high density, endurance, and commercial viability.
Dhruv Gajaria, Kevin Antony Gomez, Tosiron Adegbija   +2 more
openaire   +4 more sources

Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics. [PDF]

Adv Sci (Weinh)
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Liu Y, Sun Y, Luo H, Zhao D, Zeng Y, Zhang X, Liu Z, Peng H, Zhang Z, Yang J, Zhang J, Wang D, Shi J, Li S.   +13 more
europepmc   +2 more sources

Temperature-Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS-Integrated Spintronic Chips. [PDF]

Adv Sci (Weinh)
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Wang M, Jiang C, Wang Z, Hou Z, Zhang Z, Zhao Y, Liu HX, Zhao W.   +7 more
europepmc   +2 more sources

On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2021
A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj   +1 more source

Hardware‐Native Gaussian Sampling With Probabilistic Ising Machines for Modern Communication Paradigms [PDF]

Advanced science
Probabilistic Ising machines are introduced as hardware‐native Gaussian samplers for edge communication workloads. Tunable variance and sampling density enable accurate distributions for Falcon‐class post‐quantum signatures and diffusion‐based semantic communication.
Rodrigues D, Grimaldi A, Volpe D, Bao Y, Yang S, Grassucci E, Siracusano G, Chiappini M, Carpentieri M, Yang H, Finocchio G.   +10 more
europepmc   +2 more sources

A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

Computers, 2017
Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
doaj   +1 more source

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

IEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan, Satwik Patnaik, Johann Knechtel, Ozgur Sinanoglu, Shaloo Rakheja   +4 more
doaj   +1 more source

A Spintronic 2M/7T Computation-in-Memory Cell

Journal of Low Power Electronics and Applications, 2022
Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the ...
Atousa Jafari, Christopher Münch, Mehdi Tahoori   +2 more
doaj   +1 more source

Spin-Hall Assisted STT-RAM Design and Discussion [PDF]

Proceedings of the 18th System Level Interconnect Prediction Workshop, 2016
In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM ...
Enes Eken, Ismail Bayram, Yaojun Zhang, Bonan Yan, Wenqing Wu, Hai (Helen) Li, Yiran Chen 0001   +6 more
openaire   +1 more source