Results 71 to 80 of about 129,221 (220)

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

Small, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong, Chen‐Yu Yang, Hsin‐Han Lee, Guan‐Long Chen, Ching Shih, Yu‐Chen Hsin, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Kuan‐Ming Chen, Ho‐Lin Tsai, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +21 more
wiley   +1 more source

Oldest Cretaceous latimeriid elucidates cranial evolution in derived and extant coelacanths (Actinistia, Latimeriidae)

Papers in Palaeontology, Volume 12, Issue 2, March/April 2026.
Abstract The fossil record of coelacanths (Actinistia) is diminished by several nominal gaps that obscure vital information pertaining to the clade's evolutionary history. Latimeriidae, the family that includes the extant coelacanth Latimeria, in addition to the Cenozoic, has an outstanding missing gap of 50 myr during the Mesozoic, with no records of ...
Jack L. Norton, Emma L. Bernard, Charles Wood, David M. Martill, Samuel L. A. Cooper   +4 more
wiley   +1 more source

낮은 에너지 소비 및 성능 오버헤드를위한 안정적인 Spin-Transfer Torque RAM (STT-RAM) 캐시

, 2020
학위논문(박사) - 한국과학기술원 : 전산학부, 2020.2,[v, 75 p. :]The demand for the increased memory size in the computer industry and the scalability challenges of the traditional memory technologies inspired the researches towards next-generation memory technologies.
Qureshi, Muhammad Avais
core  

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, Volume 8, Issue 2, February 2026.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

Write management mechanisms for systems with non-volatile memory technologies

Journal of Computer Science and Technology, 2017
Since the beginning of computer systems, the memory subsystem has always been one of their essential components. However, the different pace of change between microprocessor and memory has become one of the greatest challenges that current designers have
Roberto Alonso Rodríguez Rodríguez
doaj  

A Comparative Study of Digital Memristor‐Based Processing‐In‐Memory from a Device and Reliability Perspective

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Processing‐in‐memory (PIM) architectures based on memristors offer significant potential for low‐power computation and the realization of novel computing paradigms by performing logic operations directly within memory. This review summarizes recent advances in memristor‐based logic techniques, with particular emphasis on reliability considerations and ...
Thomas Neuner, Henriette Padberg, Lior Kornblum, Eilam Yalon, Pedram Khalili Amiri, Shahar Kvatinsky   +5 more
wiley   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Validation and Investigation of a Multiaxial Progressive Damage Model Through Glass Fiber Reinforced Tube Specimen Under Fatigue Loading

Fatigue &Fracture of Engineering Materials &Structures, Volume 49, Issue 1, Page 84-101, January 2026.
ABSTRACT In the field of composite structure fatigue simulations, progressive damage models are common tools. However, these models are dependent on the definition of meta parameters, such as the residual stiffness following an interfiber failure mode. This study presents a progressive damage model utilizing shell elements, with the material parameters
Richard Fink, Stephan Häusler, Manuela Sander   +2 more
wiley   +1 more source