Results 11 to 20 of about 2,846 (150)

Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices [PDF]

Nanomaterials
In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared.
Yao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, Kai-Chi Huang   +6 more
doaj   +2 more sources

Binary-Weighted Neural Networks Using FeRAM Array for Low-Power AI Computing [PDF]

Nanomaterials
Artificial intelligence (AI) has become ubiquitous in modern computing systems, from high-performance data centers to resource-constrained edge devices.
Seung-Myeong Cho, Jaesung Lee, Hyejin Jo, Dai Yun, Jihwan Moon, Kyeong-Sik Min   +5 more
doaj   +2 more sources

SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

IEEE Access, 2020
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation.
Nikhil Rangarajan, Satwik Patnaik, Johann Knechtel, Ozgur Sinanoglu, Shaloo Rakheja   +4 more
doaj   +1 more source

ENTT/ENTTR: A Family of Improved Emerging NVM-Based Trojan Triggers and Resets

Frontiers in Nanotechnology, 2022
Hardware Trojans in Integrated Circuits (ICs), that are inserted as hostile modifications in the design phase and/or the fabrication phase, are a security threat since the semiconductor manufacturing process is increasingly becoming globalized.
Karthikeyan Nagarajan, Mohammad Nasim Imtiaz Khan, Swaroop Ghosh   +2 more
doaj   +1 more source

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Exploiting non-volatile RAM to enhance flash file system performance [PDF]

Proceedings of the 7th ACM & IEEE international conference on Embedded software - EMSOFT '07, 2007
Non-volatile RAM (NVRAM) such as PRAM (Phase-change RAM), FeRAM (Ferroelectric RAM), and MRAM (Magnetoresistive RAM) has characteristics of both non-volatile storage and random access memory (RAM). These forms of NVRAM are currently being developed by major semiconductor companies and are expected to be an everyday component in the near future.
In Hwan Doh, Jongmoo Choi, Donghee Lee 0001, Sam H. Noh   +3 more
openaire   +1 more source

DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

Journal of Low Power Electronics and Applications, 2017
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal, Rujia Wang, Jeffrey Vetter   +2 more
doaj   +1 more source

Recovery of Distributed Iterative Solvers for Linear Systems Using Non-Volatile RAM

2022 IEEE/ACM 12th Workshop on Fault Tolerance for HPC at eXtreme Scale (FTXS), 2022
HPC systems are a critical resource for scientific research. The increased demand for computational power and memory ushers in the exascale era, in which supercomputers are designed to provide enormous computing power to meet these needs. These complex supercomputers consist of numerous compute nodes and are consequently expected to experience frequent
Yehonatan Fridman, Yaniv Snir, Harel Levin, Danny Hendler, Hagit Attiya, Gal Oren 0001   +5 more
openaire   +2 more sources

A Novel Low Power and Reduced Transistor Count Magnetic Arithmetic Logic Unit Using Hybrid STT-MTJ/CMOS Circuit

IEEE Access, 2020
One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one ...
Prashanth Barla, Vinod Kumar Joshi, Somashekara Bhat   +2 more
doaj   +1 more source

Design of In-Memory Parallel-Prefix Adders

Journal of Low Power Electronics and Applications, 2021
Computational methods in memory array are being researched in many emerging memory technologies to conquer the ‘von Neumann bottleneck’. Resistive RAM (ReRAM) is a non-volatile memory, which supports Boolean logic operation, and adders can be implemented
John Reuben
doaj   +1 more source