Results 111 to 120 of about 16,817 (212)

Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]

Sci Adv
Liu S, Rogers V, Hu CY, Song MY, Bao X, Incorvia JAC.   +5 more
europepmc   +1 more source

All electrical sub-nanosecond field-free switching of perpendicular magnetization with high magnetic field immunity. [PDF]

Nat Commun
Shen J, Cheng J, Zeng Y, Zhang Z, Yang M, Florica CF, Niu H, Ji T, Cheng Z, Yang X, Yu L, Jiang M, Ma J, Sun L, Chen G, Zhang X, Miao B, Ding H.   +17 more
europepmc   +1 more source

A generic compact model for resistive memories and switches. [PDF]

Sci Rep
Jung S, Kim H, Park J, Kim S, Kim MH.
europepmc   +1 more source

Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM. [PDF]

Micromachines (Basel)
Ye H, Zhang X, Lu N, Li J, Jia J, Zhao G, Sun J, Zhang L, Wang C.   +8 more
europepmc   +1 more source

Editorial for the Topic on Magnetic Materials and Devices. [PDF]

Micromachines (Basel)
Sverdlov V.
europepmc   +1 more source

Improving MRAM Performance with Sparse Modulation and Hamming Error Correction. [PDF]

Sensors (Basel)
Le N, Nguyen TA, Lee JH, Lee J.
europepmc   +1 more source

250 magnetic tunnel junctions-based probabilistic Ising machine. [PDF]

Nat Commun
Yang S, Grimaldi A, Bao Y, Raimondo E, Si J, Finocchio G, Yang H.   +6 more
europepmc   +1 more source

Breaking voltage-controlled magnetic anisotropy-magnetoresistance trade-off for ultralow-energy switching in magnetic tunnel junctions. [PDF]

Sci Adv
Zhang Y, Xu M, Zhou B, Eckel C, Ghosh S, Yun H, Habiboglu A, Lyu D, Gopman DB, Wang JP, Mkhoyan KA, Wang W.   +11 more
europepmc   +1 more source

Nanoelectronics with Two-Dimensional Magnets. [PDF]

Nano Lett
Zhao B, Ngaloy R, Pandey L, Bangar H, Dubey DP, Dash SP.   +5 more
europepmc   +1 more source

A parallel magnetic tunnel junction-based probabilistic Ising processor for efficient quadratic optimization. [PDF]

Nat Commun
Yang S, Bao Y, Humianto E, Prabhakar A, Yang H.   +4 more
europepmc   +1 more source