Results 111 to 120 of about 17,853 (211)

Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) With Channel Quantization

As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed, and high ...
Cai, Kui, Song, Guanghui, Zhong, Xingwei
core  

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing. [PDF]

Nanomaterials (Basel)
Moposita T, Garzón E, Teman A, Lanuzza M.   +3 more
europepmc   +1 more source

Applied spintronics: From spin transport to spin-charge interconversion and emerging devices. [PDF]

Sci Adv
Bibes M, Gomonay O, Kuschel T, Sinova J, Weiler M, Fukami S, Kläui M.   +6 more
europepmc   +1 more source

Wafer-scale SOT-MRAM for analog crossbar array applications. [PDF]

Sci Adv
Liu S, Rogers V, Hu CY, Song MY, Bao X, Incorvia JAC.   +5 more
europepmc   +1 more source

All electrical sub-nanosecond field-free switching of perpendicular magnetization with high magnetic field immunity. [PDF]

Nat Commun
Shen J, Cheng J, Zeng Y, Zhang Z, Yang M, Florica CF, Niu H, Ji T, Cheng Z, Yang X, Yu L, Jiang M, Ma J, Sun L, Chen G, Zhang X, Miao B, Ding H.   +17 more
europepmc   +1 more source

Opportunities toward Scalable Domain-Wall-Based Spintronic Devices. [PDF]

ACS Nanosci Au
Jeon JC, Fischer L, Li YC, Lei R, Parkin SSP.   +4 more
europepmc   +1 more source

A generic compact model for resistive memories and switches. [PDF]

Sci Rep
Jung S, Kim H, Park J, Kim S, Kim MH.
europepmc   +1 more source

Design and analysis of the reference cells for STT-MRAM

IEICE Electronics Express, 2013
Zhang, Li, Zhao, Weisheng, Zhuang, Yiqi, Bao, Junlin, Tang, Hualian, Li, Cong, Xiang, Xin   +6 more
openaire   +2 more sources

Research on Open Magnetic Shielding Packaging for STT and SOT-MRAM. [PDF]

Micromachines (Basel)
Ye H, Zhang X, Lu N, Li J, Jia J, Zhao G, Sun J, Zhang L, Wang C.   +8 more
europepmc   +1 more source

Static magnetization switching in an artificial antiferromagnetic multilayer driven by a voltage-controlled magnetic anisotropy effect. [PDF]

Nat Mater
Nakayama H, Nozaki T, Yamaji T, Nozaki T, Imamura H, Yuasa S.   +5 more
europepmc   +1 more source