Results 91 to 100 of about 17,853 (211)

P-STT-MRAM Thermal stability and modeling of its temperature dependence

, 2018
International audienceDue to their high speed[1], high endurance[2] and non-volatility, perpendicular STT-MRAM (P-STT-MRAM) are seen as one of thebest candidate for non volatile memory embedded applications. However, their data retention time at elevated
B. Dieny, S. Auffret, E. Nowak, J. Guelffucci, I.L. Prejbeanu, Auffret, S., N. Lamard, Guelffucci, J, L. Tillie, Prejbeanu, I., L, Chatterjee, J, Lamard, N., Nowak, E, R. C. Sousa, Dieny, B., Tillie, L., Sousa, R, C, J. Chatterjee   +17 more
core   +1 more source

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +1 more source

Evaluation of STT-MRAM as a Scratchpad for Training in ML Accelerators [PDF]

, 2023
Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance afforded by Moore's ...
Raghunathan, Anand, Wang, Cheng, Roy, Sourjya   +2 more
core  

Reliable and high performance STT-MRAM architectures based on controllable-polarity devices

, 2015
Source degeneration of access devices in the parallel (P) anti-parallel (AP) switching in Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) has ultimately been a limiting factor in the operational speed of these types of memories.
Yu Bi, Shamsi, Kaveh, Michael Niemier, Pierre-Emmanuel Gaillardon, Jin, Yier, Gaillardon, Pierre Emmanuel, Yier Jin, X. Sharon Hu, Bi, Yu, Kaveh Shamsi, Niemier, Michael   +10 more
core   +1 more source

Impact of external magnetic fields on STT-MRAM [PDF]

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation.
Couet, Sebastien, Thomas, Luc, Lee, Kyung-Jin, Dieny, Bernard, Worledge, Daniel, Soss, Steven, Leonelli, Daniele, Lebrun, Laurent, Fukami, Shunsuke, Salimy, Siamak, Coughlin, Thomas, Aggarwal, Sanjeev, Noh, Yonghwan, Garello, Kevin, Guedj, Jack, Naik, Vinayak Bharat, Incorvia, Jean Anne C., Wang, Weigang   +17 more
core  

Concealable and Field‐Free Physical Unclonable Function Based on Voltage‐Controlled Magnetic Tunnel Junctions

Advanced Electronic Materials
Physical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random‐access memory (MRAM) is a strong candidate for PUF implementations due to its high density ...
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri   +6 more
doaj   +1 more source

Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi   +3 more
doaj   +1 more source

Magnetization switching in nanoelements induced by the spin-transfer torque: Study by massively parallel micromagnetic simulations

AIP Advances, 2019
In this paper we present a detailed numerical study of magnetization switching in shape-anisotropic thin-film nanoelements. These elements are at present of the major interest for the applied solid state magnetism as main components of a new generation ...
Elena K. Semenova, Dmitry V. Berkov
doaj   +1 more source

Read-Write Circuit for STT-MRAM With Stochastic Switchings

, 2018
Spin-transfer torque magnetic random memory (STT-MRAM) is a promising candidate for universal memory due to its non-volatility, fast access speed, high density, and low power consumption.
박상규
core   +1 more source

STT-DPSA: Digital PUF-Based Secure AuthenticationUsing STT-MRAM for the Internet of Things. [PDF]

Micromachines (Basel), 2020
Chien WC, Chang YC, Tsou YT, Kuo SY, Chang CR.   +4 more
europepmc   +1 more source