Results 91 to 100 of about 12,742 (221)
Exploring potentials of perpendicular magnetic anisotropy STT-MRAM for cache design
International audienceTraditional CMOS integrated circuits suffer from elevated power consumption as technology node advances. A few emerging technologies are proposed to deal with this issue.
Zhang, Youguang +9 more
core +1 more source
Modelling and Circuit Design for STT-MRAM
This thesis presents three research contributions in the areas of modelling, circuit-level design, and device-level design of spin-transfer-torque magnetoresistive random access memory (STT-MRAM).
Vatankhahghadim, Aynaz
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STT-MRAM for real-time embedded systems: performance and WCET implications [PDF]
STT-MRAM is an emerging non-volatile memory quickly approaching DRAM in terms of capacity, frequency and device size. Intensified efforts in STT-MRAM research by the memory manufacturers may indicate a revolution with STT-MRAM memory technology is ...
Radojković, Petar +9 more
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In this paper we present a detailed numerical study of magnetization switching in shape-anisotropic thin-film nanoelements. These elements are at present of the major interest for the applied solid state magnetism as main components of a new generation ...
Elena K. Semenova, Dmitry V. Berkov
doaj +1 more source
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar +3 more
doaj +1 more source
Heterogeneous 3D Integration for a RISC-V System with STT-MRAM
Spin Torque Transfer Magnetic RAM (STT-MRAM) is a promising Non-Volatile Memory (NVM) technology achieving high density, low leakage power, and relatively small read/write delays.
Milojevic, Dragomir +8 more
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STT-DPSA: Digital PUF-Based Secure AuthenticationUsing STT-MRAM for the Internet of Things. [PDF]
Chien WC +4 more
europepmc +1 more source
Defect and Fault Modeling Framework for STT-MRAM Testing
STT-MRAM mass production is around the corner as major foundries worldwide invest heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet cost-efficient test solutions are of great importance.
Wu, L. (author) +7 more
core +1 more source
Impact of a laser pulse on a STT-MRAM bitcell: security and reliability issues
International audienceThe Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been identified, by the International Technology Roadmap for Semiconductors (ITRS), as one of the most promising emerging technology.
Delattre, R. +17 more
core +1 more source
Improving the Performance of STT-MRAM LLC through Enhanced Cache Replacement Policy
International audienceModern architectures adopt large on-chip cache memory hierarchies with more than two levels. While this improves performance, it has a certain cost in area and power consumption.
Bruguier, Florent +11 more
core +1 more source

