Results 91 to 100 of about 16,817 (212)

Magnetization switching in nanoelements induced by the spin-transfer torque: Study by massively parallel micromagnetic simulations

AIP Advances, 2019
In this paper we present a detailed numerical study of magnetization switching in shape-anisotropic thin-film nanoelements. These elements are at present of the major interest for the applied solid state magnetism as main components of a new generation ...
Elena K. Semenova, Dmitry V. Berkov
doaj   +1 more source

STT-DPSA: Digital PUF-Based Secure AuthenticationUsing STT-MRAM for the Internet of Things. [PDF]

Micromachines (Basel), 2020
Chien WC, Chang YC, Tsou YT, Kuo SY, Chang CR.   +4 more
europepmc   +1 more source

Building energy-efficient multi-level cell STT-MRAM based cache through dynamic data-resistance encoding

, 2014
With attractive advantages like high density and low leakage, Spin-Transfer Torque Magnetoresistive RAM (STT-MRAM) is a promising candidate to replace conventional SRAM technology to build large-size and low-power on-chip caches.
Cong Xu, Chi, Ping, Yuan Xie, Xie, Yuan, Ping Chi, Xiaochun Zhu, Zhu, Xiaochun, Xu, Cong   +7 more
core   +1 more source

Exploring potentials of perpendicular magnetic anisotropy STT-MRAM for cache design

, 2014
International audienceTraditional CMOS integrated circuits suffer from elevated power consumption as technology node advances. A few emerging technologies are proposed to deal with this issue.
Zhang, Youguang, Weisheng Zhao, Zhang, Xiaolong, Xiaolong Zhang, Youguang Zhang, Zhao, Weisheng, Todri-Sanial, Aida, Cheng, Yuanqing, Yuanqing Cheng, Aida Todri-Sanial   +9 more
core   +1 more source

STT-MRAM characterization and its test implications [PDF]

, 2020
Spin torque transfer (STT)-magnetoresistive random-access memory (MRAM) has come a long way in research to meet the speed and power consumption requirements for future memory applications. The state-of-the-art STT-MRAM bit-cells employ magnetic tunnel
Radhakrishnan, Govindakrishnan
core  

Impact of external magnetic fields on STT-MRAM [PDF]

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation.
Couet, Sebastien, Thomas, Luc, Lee, Kyung-Jin, Dieny, Bernard, Worledge, Daniel, Soss, Steven, Leonelli, Daniele, Lebrun, Laurent, Fukami, Shunsuke, Salimy, Siamak, Coughlin, Thomas, Aggarwal, Sanjeev, Noh, Yonghwan, Garello, Kevin, Guedj, Jack, Naik, Vinayak Bharat, Incorvia, Jean Anne C., Wang, Weigang   +17 more
core   +1 more source

Survey of STT-MRAM Cell Design Strategies

, 2017
Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for embedded and data storage applications seeking non-volatility, near-zero standby energy, and high density.
Deliang Fan, Salehi, Soheil, Fan, Deliang, Ronald F. Demara, Soheil Salehi, Demara, Ronald F.   +5 more
core   +1 more source

Throughput-Efficient Network-on-Chip Router Design with STT-MRAM

, 2012
As the number of processor cores on a chip increases with the advance of CMOS technology, there has been a growing need of more efficient Network-on-Chip (NoC) design since communication delay has become a major bottleneck in large-scale multicore ...
Narayana, Sagar 1986-
core   +1 more source

Exploring the role of interfacial Dzyaloshinskii–Moriya interaction in write error rate anomalies of spin-transfer torque magnetic tunnel junctions

npj Spintronics
The performance and reliability of spin-transfer torque magnetic random-access memory (STT-MRAM) can be compromised by anomalous switching behavior, especially during high-speed operations.
Prosenjit Das, Md Mahadi Rajib, Jayasimha Atulasimha   +2 more
doaj   +1 more source

Controlling Bias Field of Pinned Layer Stacks for Double‐Pinned‐Layer Magnetic Tunnel Junction for STT‐MRAM

Advanced Electronic Materials
Double‐pinned‐layer Magnetic Tunnel Junction (Double PL MTJ) enhances spin‐transfer‐torque magneto‐resistive random‐access memory (STT‐MRAM) performance by requiring anti‐parallel magnetization between both PLs at free layer interfaces and minimizing ...
Shujun Ye, Koichi Nishioka
doaj   +1 more source