Results 61 to 70 of about 12,742 (221)

Research progresses on switching mechanism and advanced electrical characterizations of magnetic random access memory

Gongneng cailiao yu qijian xuebao
To address the energy efficiency and data throughput limitations of the Von Neumann architecture, computing-in-memory (CIM) systems based on spiking neural networks (SNNs) impose rigorous demands on the performance of non-volatile memory technologies ...
Xiaoqian MA, Shifan GAO, Yiming QU
doaj   +1 more source

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, Volume 2, Issue 2, April 2026.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li, Yingqian Xu, Caihua Wan, Ran Zhang, Meike Hindenberg, Raik Hoffmann, Shiqiang Liu, Tianyi Zhang, Shilong Xiong, Dehao Kong, Jihao Xia, Fangshuo Gao, Zhuyang Nie, Thomas Kämpfe, Guoqiang Yu, Xiufeng Han   +15 more
wiley   +1 more source

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

IEEE Access
In recent years, the energy consumption of IoT edge nodes has significantly increased due to the communication process. This necessitates the need to offload more computation to the edge nodes to minimize data transmission over the network.
Belal Jahannia, Seyed Ali Ghasemi, Hamed Farbeh   +2 more
doaj   +1 more source

Design and Evaluation of a 28-nm FD-SOI STT-MRAM for Ultra-Low Power Microcontrollers

IEEE Access, 2019
The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of systems-on-chip has significantly increased due to the high-density integration and the high leakage power of current ...
Guillaume Patrigeon, Pascal Benoit, Lionel Torres, Sophiane Senni, Guillaume Prenat, Gregory Di Pendina   +5 more
doaj   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

Radio-frequency assisted switching in perpendicular magnetic tunnel junctions

npj Spintronics
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency ...
Mark Hayward, Salvatore Perna, Massimiliano d’Aquino, Claudio Serpico, Wonjoon Jung, Chunhui Dai, Patrick M. Braganca, Ilya N. Krivorotov   +7 more
doaj   +1 more source

Leaky‐Integrate‐Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin‐Orbit Torque

Advanced Science, Volume 13, Issue 16, 18 March 2026.
A spintronic leaky‐integrate‐and‐fire neuron is realized using Spin Orbit Torque driven domain‐wall motion for integration and synthetic antiferromagnetic coupling for the leaky process. The specialized Hall‐bar geometry enables controlled DW dynamics, achieving repeatable integration and firing events. This compact, CMOS‐compatible design highlights a
Badsha Sekh, Durgesh Kumar, Hasibur Rahaman, Ravi Shankar Verma, Ramu Maddu, Jianpeng Chan, Wai Lum William Mah, Stuart S. P. Parkin, S. N. Piramanayagam   +8 more
wiley   +1 more source