Results 61 to 70 of about 491 (183)

Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

Advanced Intelligent Systems, Volume 8, Issue 4, April 2026.
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li, Yingqian Xu, Caihua Wan, Ran Zhang, Meike Hindenberg, Raik Hoffmann, Shiqiang Liu, Tianyi Zhang, Shilong Xiong, Dehao Kong, Jihao Xia, Fangshuo Gao, Zhuyang Nie, Thomas Kämpfe, Guoqiang Yu, Xiufeng Han   +15 more
wiley   +1 more source

Research progress and challenges of the self-heating effect in STT-MRAM devices

Gongneng cailiao yu qijian xuebao
This paper present a systematic review of recent research progress and outstanding challenges related to the self-heating effect (SHE) in spin-transfer torque magnetic random-access memory (STT-MRAM) devices.
Zhangsheng LAN, Saike ZHU, Shifan GAO, Yiming QU   +3 more
doaj   +1 more source

Accuracy Improvement With Weight Mapping Strategy and Output Transformation for STT-MRAM-Based Computing-in-Memory

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This work presents an analog computing-in-memory (CiM) macro with spin-transfer torque magnetic random access memory (STT-MRAM) and 28-nm CMOS technology.
Xianggao Wang, Na Wei, Shifan Gao, Wenhao Wu, Yi Zhao   +4 more
doaj   +1 more source

MODELING OF MTJ AND ITS VALIDATION USING NANOSCALE MRAM BITCELL [PDF]

Journal of Engineering Science and Technology, 2017
Magnetic Tunnel Junction (MTJ) is a promising candidate for nonvolatile and low power memory design. MTJ is basic building block of STT-MRAM bitcell.
CHANDRAMAULESHWAR ROY, ARUNDHATI BHATTACHARYA, A. ISLAM   +2 more
doaj  

A Timing-Based Split-Path Sensing Circuit for STT-MRAM. [PDF]

Micromachines (Basel), 2022
Ishdorj B, Kim J, Kim JH, Na T.
europepmc   +1 more source

Enhancing On-Device DNN Inference Performance With a Reduced Retention-Time MRAM-Based Memory Architecture

IEEE Access
As applications using deep neural networks (DNNs) are increasingly deployed on mobile devices, researchers are exploring various methods to achieve low energy consumption and high performance. Recently, advances in STT-MRAM have shown promise in offering
Munhyung Lee, Taehan Lee, Junwon Yeo, Hyukjun Lee   +3 more
doaj   +1 more source

Standby magnetic immunity calculator for STT-MRAM [PDF]

AIP Advances
This work investigates the impact of external magnetic fields, field orientation, temperature, and exposure time on the standby magnetic immunity (SMI) of spin-transfer torque magnetoresistive random-access memory. Wafer-level measurements were performed
A. Talapatra, F. Schlaphof, P. Scharf, M. Mansueto, D. Sanchez Hazen, J. Müller, S. Soss, A. Zaka   +7 more
doaj   +1 more source

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario. [PDF]

Micromachines (Basel), 2021
Bian Z, Hong X, Guo Y, Naviner L, Ge W, Cai H.   +5 more
europepmc   +1 more source

Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes.
Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi   +3 more
doaj   +1 more source

Magnetization switching in nanoelements induced by the spin-transfer torque: Study by massively parallel micromagnetic simulations

AIP Advances, 2019
In this paper we present a detailed numerical study of magnetization switching in shape-anisotropic thin-film nanoelements. These elements are at present of the major interest for the applied solid state magnetism as main components of a new generation ...
Elena K. Semenova, Dmitry V. Berkov
doaj   +1 more source