Results 61 to 70 of about 16,817 (212)

A Radiation-Hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices

Applied Sciences
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows ...
Shubin Zhang, Peifang Dai, Ning Li, Yanbo Chen   +3 more
doaj   +1 more source

Selective Tuning of Perpendicular Magnetic Anisotropy and Dzyaloshinskii–Moriya Interaction in Heterostructures Compatible with Magnetic Tunnel Junctions

Advanced Electronic Materials, Volume 12, Issue 18, 21 September 2026.
ABSTRACT Chirally coupled magnetic tunnel junctions (MTJs) have been proposed as a route toward compact spin logic architectures. Micromagnetic simulations indeed show that chiral coupling between adjacent MTJs with perpendicular magnetic anisotropy (PMA) can be achieved through an in‐plane (IP) interconnection mediated by the Dzyaloshinskii–Moriya ...
Bob Vermeulen, Seongbin Seo, Domenico Giuliano, Jyotirmoy Chatterjee, Giacomo Talmelli, Robert Carpenter, Yann Canvel, Yanan Li, Björn Heinz, Philipp Pirro, Bart Sorée, Kristiaan Temst, Van Dai Nguyen, Gouri Sankar Kar, Siddharth Rao   +14 more
wiley   +1 more source

Reliability and performance evaluation for STT-MRAM under temperature variation

, 2016
International audienceSpin transfer torque magnetic random access memory (STT-MRAM) is a potential candidate for next generation universal memory technology, which possesses the high density and cost benefits of DRAM, the high access speed of SRAM, the ...
Zhang, Youguang, Weisheng Zhao, Wang Kang, Torres, Lionel, Cheng, Yuanqing, Lionel Torres, Aida Todri-Sanial, Kang, Wang, Zhang, Liuyang, Liuyang Zhang, Youguang Zhang, Zhao, Weisheng, Todri-Sanial, Aida, Yuanqing Cheng   +13 more
core   +1 more source

Neuromorphic Hardware Materials for Intelligent Artificial Perception and Multimodal Fusion: From Sensing to Cognition

Interdisciplinary Materials, Volume 5, Issue 5, Page 699-727, September 2026.
Neuromorphic hardware enables the integration of sensing, memory, and computing for intelligent artificial perception. Recent advances in multimodal fusion further highlight its potential for embodied intelligence and next‐generation human–machine interfaces.
Yixin Zhu, Yuqing Hu, Changjin Wan, Qing Wan   +3 more
wiley   +1 more source

Radio-frequency assisted switching in perpendicular magnetic tunnel junctions

npj Spintronics
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency ...
Mark Hayward, Salvatore Perna, Massimiliano d’Aquino, Claudio Serpico, Wonjoon Jung, Chunhui Dai, Patrick M. Braganca, Ilya N. Krivorotov   +7 more
doaj   +1 more source

Multi-Retention STT-MRAM Architectures for IoT: Evaluating the Impact of Retention Levels and Memory Mapping Schemes

IEEE Access
In recent years, the energy consumption of IoT edge nodes has significantly increased due to the communication process. This necessitates the need to offload more computation to the edge nodes to minimize data transmission over the network.
Belal Jahannia, Seyed Ali Ghasemi, Hamed Farbeh   +2 more
doaj   +1 more source

Robustness of Half‐Metallicity and Spin‐Dependent Transport in Defective Co2HfSn and Co2ZrSn Heusler Alloys

Advanced Electronic Materials, Volume 12, Issue 16, 24 August 2026.
Point defects strongly influence the spin‐dependent electronic and transport properties of Co2HfSn and Co2ZrSn Heusler alloys. First‐principles calculations reveal that Co vacancies preserve half‐metallicity, while anti‐site and swap defects introduce minority‐spin states that reduce spin selectivity.
Alessandro Difalco, Vaishali Roondhe, Ignatio G. Winning, Marcello Baricco, Alberto Castellero, Mauro Palumbo   +5 more
wiley   +1 more source

Design and Evaluation of a 28-nm FD-SOI STT-MRAM for Ultra-Low Power Microcontrollers

IEEE Access, 2019
The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of systems-on-chip has significantly increased due to the high-density integration and the high leakage power of current ...
Guillaume Patrigeon, Pascal Benoit, Lionel Torres, Sophiane Senni, Guillaume Prenat, Gregory Di Pendina   +5 more
doaj   +1 more source

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

IEEE Journal of the Electron Devices Society, 2020
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang   +7 more
doaj   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source