Results 31 to 40 of about 16,817 (212)

Integration of STT-MRAM model into CACTI simulator [PDF]

2014 9th International Design and Test Symposium (IDT), 2014
In the last decade, academies and private companies have actively explored emerging memory technologies. STT-MRAM in particular is experiencing a rapid development but it is facing several challenges in terms of performance and reliability. Several techniques at cell level have been proposed to mitigate such issues but currently few tools and ...
Indaco, M., DI CARLO, STEFANO, Vatajelu, E. I., PRINETTO, Paolo Ernesto, Arcaro, S., Pala, D.   +5 more
openaire   +3 more sources

Read disturb fault detection in STT-MRAM [PDF]

2014 International Test Conference, 2014
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of its various advantageous features such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M. B.   +3 more
openaire   +3 more sources

Real-Time Switching Dynamics in STT-MRAM

IEEE Journal of the Electron Devices Society, 2022
In this paper a new experimental technique for measuring the switching dynamics and extracting the energy consumption of Spin Transfer Torque MRAM (STT-MRAM) device is presented. This technique is performed by a real-time current reading while a pulsed bias is applied.
N. Yazigy, J. Postel-Pellerin, V. Della Marca, K. Terziyan, R. C. Sousa, P. Canet, G. Di Pendina   +6 more
openaire   +4 more sources

A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs

, 2019
Spin Transfer Torque Magnetic RAM (STT-MRAM) is being extensively considered as a promising replacement for Last Level Caches (LLC), due to its high density, low leakage and non-volatility. However, writes to STT-MRAM are energy intensive and have a high
Christian Tenllado, Sushil Sakhare, Bueno Mora, Nicolás, Manu Perumkunnil, Furnemont, Arnaud, Nicolas Bueno, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil, Peter Debacker, Sakhare, Sushil, Evenblij, Timmon, Debacker, Peter, Catthoor, Franky, Gouri Kar, Arnaud Furnemont, Kar, Gouri, Gómez Pérez, José Ignacio, Jose Ignacio Gomez-Perez, Timon Evenblij, Francky Catthoor   +19 more
core   +1 more source

Embedded systems to high performance computing using STT-MRAM

, 2017
International audienceThe scaling limits of CMOS have pushed many researchers to explore alternative technologies for beyond CMOS circuits. In addition to the increased device variability and process complexity led by the continuous decreasing size of ...
Coi, Odilia, Delobelle, Thibaud, Sophiane Senni, Thibaud Delobelle, Benoit, Pascal, Pierre-Yves Peneau, Gilles Sassatelli, Torres, Lionel, Sassatelli, Gilles, Péneau, Pierre-Yves, Lionel Torres, Senni, Sophiane, Abdoulaye Gamatie, Odilia Coi, Pascal Benoit, Gamatié, Abdoulaye   +15 more
core   +1 more source

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +1 more source

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source

System level exploration of a STT-MRAM based level 1 data-cache

, 2015
Since Non-Volatile Memory (NVM) technologies are being explored extensively nowadays as viable replacements for SRAM based memories in LLCs and even L2 caches, we try to take stock of their potential as level 1 (L1) data caches.
Gómez Pérez, José Ignacio, Tirado Fernández, José Francisco, Catthoor, Francky, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil   +4 more
core   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

Correlation Power Analysis Attack against STT-MRAM Based Cyptosystems [PDF]

, 2017
Emerging technologies such as Spin-transfer torque magnetic random-access memory (STT-MRAM) are considered potential candidates for implementing low-power, high density storage systems.
Ankit Mondal, Ankur Srivastava, Abhishek Chakraborty   +2 more
core   +2 more sources