Results 31 to 40 of about 17,853 (211)

Integration of STT-MRAM model into CACTI simulator [PDF]

2014 9th International Design and Test Symposium (IDT), 2014
In the last decade, academies and private companies have actively explored emerging memory technologies. STT-MRAM in particular is experiencing a rapid development but it is facing several challenges in terms of performance and reliability. Several techniques at cell level have been proposed to mitigate such issues but currently few tools and ...
Indaco, M., DI CARLO, STEFANO, Vatajelu, E. I., PRINETTO, Paolo Ernesto, Arcaro, S., Pala, D.   +5 more
openaire   +3 more sources

Read disturb fault detection in STT-MRAM [PDF]

2014 International Test Conference, 2014
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of its various advantageous features such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M. B.   +3 more
openaire   +3 more sources

Real-Time Switching Dynamics in STT-MRAM

IEEE Journal of the Electron Devices Society, 2022
In this paper a new experimental technique for measuring the switching dynamics and extracting the energy consumption of Spin Transfer Torque MRAM (STT-MRAM) device is presented. This technique is performed by a real-time current reading while a pulsed bias is applied.
N. Yazigy, J. Postel-Pellerin, V. Della Marca, K. Terziyan, R. C. Sousa, P. Canet, G. Di Pendina   +6 more
openaire   +4 more sources

Towards reliability of SNNs: defect implementation on STT-MRAM cell

, 2021
International audienceSpiking Neural Networks (SNNs) are being widely studied to mimic the intelligence of biological brains. In hardware level, multiple emerging non-volatile memories (NVM) are proposed to model the neural synapses, one of them being ...
Vatajelu, Elena, Ioana, Daddinounou, Salah   +1 more
core   +1 more source

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +1 more source

A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs

, 2019
Spin Transfer Torque Magnetic RAM (STT-MRAM) is being extensively considered as a promising replacement for Last Level Caches (LLC), due to its high density, low leakage and non-volatility. However, writes to STT-MRAM are energy intensive and have a high
Christian Tenllado, Sushil Sakhare, Bueno Mora, Nicolás, Manu Perumkunnil, Furnemont, Arnaud, Nicolas Bueno, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil, Peter Debacker, Sakhare, Sushil, Evenblij, Timmon, Catthoor, Franky, Gouri Kar, Arnaud Furnemont, Kar, Gouri, Gómez Pérez, José Ignacio, Jose Ignacio Gomez-Perez, Timon Evenblij, Francky Catthoor, Debacker, Peter   +19 more
core   +1 more source

Quantitative evaluation of reliability and performance for STT-MRAM [PDF]

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Due to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next generation universal memory.
Zhang, Liuyang, Todri-Sanial, Aida, Kang, Wang, Zhang, Youguang, Torres, Lionel, Cheng, Yuanqing, Zhao, Weisheng   +6 more
openaire   +2 more sources

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

Building energy-efficient multi-level cell STT-MRAM based cache through dynamic data-resistance encoding

, 2014
With attractive advantages like high density and low leakage, Spin-Transfer Torque Magnetoresistive RAM (STT-MRAM) is a promising candidate to replace conventional SRAM technology to build large-size and low-power on-chip caches.
Cong Xu, Chi, Ping, Yuan Xie, Xie, Yuan, Ping Chi, Xiaochun Zhu, Zhu, Xiaochun, Xu, Cong   +7 more
core   +1 more source