Results 31 to 40 of about 12,742 (221)

Read disturb fault detection in STT-MRAM [PDF]

2014 International Test Conference, 2014
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has potential to become a universal memory technology because of its various advantageous features such as high density, non-volatility, scalability, high endurance and CMOS compatibility.
Bishnoi, R., Ebrahimi, M., Oboril, F., Tahoori, M. B.   +3 more
openaire   +2 more sources

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

APL Materials, 2022
Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability ...
Trevor P. Almeida, Alvaro Palomino, Steven Lequeux, Victor Boureau, Olivier Fruchart, Ioan Lucian Prejbeanu, Bernard Dieny, David Cooper   +7 more
doaj   +1 more source

A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs

, 2019
Spin Transfer Torque Magnetic RAM (STT-MRAM) is being extensively considered as a promising replacement for Last Level Caches (LLC), due to its high density, low leakage and non-volatility. However, writes to STT-MRAM are energy intensive and have a high
Christian Tenllado, Sushil Sakhare, Bueno Mora, Nicolás, Manu Perumkunnil, Furnemont, Arnaud, Nicolas Bueno, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil, Peter Debacker, Sakhare, Sushil, Evenblij, Timmon, Debacker, Peter, Catthoor, Franky, Gouri Kar, Arnaud Furnemont, Kar, Gouri, Gómez Pérez, José Ignacio, Jose Ignacio Gomez-Perez, Timon Evenblij, Francky Catthoor   +19 more
core   +1 more source

Embedded systems to high performance computing using STT-MRAM

, 2017
International audienceThe scaling limits of CMOS have pushed many researchers to explore alternative technologies for beyond CMOS circuits. In addition to the increased device variability and process complexity led by the continuous decreasing size of ...
Coi, Odilia, Delobelle, Thibaud, Sophiane Senni, Thibaud Delobelle, Benoit, Pascal, Pierre-Yves Peneau, Gilles Sassatelli, Torres, Lionel, Sassatelli, Gilles, Péneau, Pierre-Yves, Lionel Torres, Senni, Sophiane, Abdoulaye Gamatie, Odilia Coi, Pascal Benoit, Gamatié, Abdoulaye   +15 more
core   +1 more source

A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and ...
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L Wang, Sudhakar Pamarti   +5 more
doaj   +1 more source

System level exploration of a STT-MRAM based level 1 data-cache

, 2015
Since Non-Volatile Memory (NVM) technologies are being explored extensively nowadays as viable replacements for SRAM based memories in LLCs and even L2 caches, we try to take stock of their potential as level 1 (L1) data caches.
Gómez Pérez, José Ignacio, Tirado Fernández, José Francisco, Catthoor, Francky, Tenllado Van Der Reijden, Christian Tomás, Komalan, Manu Perumkunnil   +4 more
core   +1 more source

Enabling a reliable STT-MRAM main memory simulation [PDF]

, 2017
STT-MRAM is a promising new memory technology with very desirable set of properties such as non-volatility, byte-addressability and high endurance. It has the potential to become the universal memory that could be incorporated to all levels of memory ...
Radojković, Petar, Petar Radojković, Sánchez Verdejo, Rommel, Asifuzzaman, Kazi, Sánchez-Verdejo, Rommel, Rommel Sánchez Verdejo, Kazi Asifuzzaman   +6 more
core   +1 more source

Correlation power analysis attack against STT-MRAM based cyptosystems [PDF]

, 2017
Emerging technologies such as Spin-transfer torque magnetic random-access memory (STT-MRAM) are considered potential candidates for implementing low-power, high density storage systems.
Ankit Mondal, Ankur Srivastava, Abhishek Chakraborty   +2 more
core   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source