Results 11 to 20 of about 16,817 (212)

STT MRAM-Based PUFs

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015
Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana, Di Natale, Giorgio, Indaco, Marco, Prinetto, Paolo   +3 more
openaire   +5 more sources

Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]

Sensors
Asymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
doaj   +2 more sources

Quantitative evaluation of reliability and performance for STT-MRAM [PDF]

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Due to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next generation universal memory.
Zhang, Liuyang, Todri-Sanial, Aida, Kang, Wang, Zhang, Youguang, Torres, Lionel, Cheng, Yuanqing, Zhao, Weisheng   +6 more
openaire   +3 more sources

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips [PDF]

Advanced Science, Volume 13, Issue 37, 3 July 2026.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +2 more sources

Programmable Topological Magnetic Textures in Above‐Room‐Temperature 2D Ferromagnet Fe3GaTe2 [PDF]

Advanced Science, EarlyView.
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Hanqing Shi, Yilian Xi, Jingwei Zhang, Jiaqi Liu, Zhizhen Ren, Shilei Zhang, Weichang Hao, Haifeng Feng, Yi Du   +8 more
wiley   +2 more sources

MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing [PDF]

Nanomaterials
Magnetoresistive random-access memory (MRAM), as a promising non-volatile memory technology, has attracted extensive research interest owing to its unique combination of high operating speed, exceptional endurance, low standby power consumption, and CMOS
Zhihan Wang, Haiwen Li, Sheng Jiang
doaj   +2 more sources

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory [PDF]

Science and Technology of Advanced Materials
A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is ...
Deepak Kumar, Mio Ishibashi, Tufan Roy, Masahito Tsujikawa, Masafumi Shirai, Shigemi Mizukami   +5 more
doaj   +2 more sources

Evaluation of embedded STT-MRAM for Ultra Low Power applications

, 2019
National audienceThe complexity of embedded devices increases as today's applications request always more services. However, the power consumption of SoC has significantly increased due to the high-density integration and the high leakage power of ...
Patrigeon, Guillaume, Benoit, Pascal, Torres, Lionel   +2 more
core   +4 more sources

STT-MRAM Technology For Energy-Efficient Cryogenic Memory Applications

, 2023
This work explores non-volatile (NV) embedded memories implemented by spin-transfer torque magnetic random access memories (STT-MRAMs). Our designs are based on state-of-the-art perpendicular magnetic tunnel junctions (MTJs) along with a commercial 65 nm
Esteban Garzon (16541610), Marco Lanuzza (16542591), leonid yavits (13854935), Adam Teman (16542590)   +3 more
core   +1 more source

Design of Rate-Compatible Protograph LDPC Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

IEEE Access, 2019
Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei, Kui Cai, Pingping Chen, Zhen Mei   +3 more
doaj   +1 more source