Results 11 to 20 of about 491 (183)
Advanced Electronic MaterialsPhysical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random‐access memory (MRAM) is a strong candidate for PUF implementations due to its high density ...
Thomas Neuner +6 more
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IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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Hierarchical cache configuration based on hybrid SOT- and STT-MRAM
AIP Advances, 2023 With the rapid growth of big data information and the continuous iteration progress of CPU architecture, the implementation of a new memory-based cache architecture is urgent and challenging. In the paper, a CPU cache architecture system based on MRAM is
Shaopu Han, Qiguang Wang, Yanfeng Jiang
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Benchmarking and Optimization of Spintronic Memory Arrays
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
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Screening of 193i and EUV lithography process options for STT-MRAM orthogonal array MTJ pillars
Micro and Nano Engineering, 2021 Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as the most promising candidate to replace the complementary metal-oxide-semiconductor (CMOS) based memories that are dominating the market in the last few decades.
Murat Pak +3 more
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IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
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STT-MRAM error correction technology based on LDPC coding
AIP Advances, 2020 Spin transfer magnetoresistive random access memory (STT-MRAM) shows potential applications with the properties of non-volatility, low power consumption and high write/read speed.
Xue Zhang, Jianbin Liu, Yanfeng Jiang
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Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory
Journal of Low Power Electronics and Applications, 2014 Static random access memory (SRAM) is the most commonly employed semiconductor in the design of on-chip processor memory. However, it is unlikely that the SRAM technology will have a cell size that will continue to scale below 45 nm, due to the leakage ...
Luís Vitório Cargnini +4 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017 The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. Nevertheless, the high write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions.
Ibrahim Ahmed +5 more
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Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015 Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana +3 more
openaire +4 more sources