Results 11 to 20 of about 12,742 (221)

STT MRAM-Based PUFs

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015
Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability affecting the electrical resistance of the MTJ device in anti-parallel magnetization.
Vatajelu, Elena Ioana, Di Natale, Giorgio, Indaco, Marco, Prinetto, Paolo   +3 more
openaire   +5 more sources

Quantitative evaluation of reliability and performance for STT-MRAM [PDF]

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016
Due to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next generation universal memory.
Zhang, Liuyang, Todri-Sanial, Aida, Kang, Wang, Zhang, Youguang, Torres, Lionel, Cheng, Yuanqing, Zhao, Weisheng   +6 more
openaire   +3 more sources

Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]

Sensors
Asymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
doaj   +2 more sources

PSA-STT-MRAM solution for extended temperature stability [PDF]

2021 IEEE International Memory Workshop (IMW), 2021
The concept of Perpendicular Shape Anisotropy (PSA) spin transfer torque (STT) MRAM has been recently proposed as a solution to achieve downsize scalability of MRAM below sub-10 nm technology nodes, down to 3-4 nm cell size lateral dimensions. In conventional p-STT-MRAM, at sub-20 nm diameters, the perpendicular anisotropy arising from the MgO/CoFeB ...
Steven Lequeux, Trevor Almeida, Nuno Caçoilo, Alvaro Palomino, Ioan Lucian Prejbeanu, Ricardo C. Sousa, David Cooper, Bernard Dieny   +7 more
openaire   +3 more sources

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory [PDF]

Science and Technology of Advanced Materials
A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (p-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is ...
Deepak Kumar, Mio Ishibashi, Tufan Roy, Masahito Tsujikawa, Masafumi Shirai, Shigemi Mizukami   +5 more
doaj   +2 more sources

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales [PDF]

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +2 more sources

Hierarchical cache configuration based on hybrid SOT- and STT-MRAM

AIP Advances, 2023
With the rapid growth of big data information and the continuous iteration progress of CPU architecture, the implementation of a new memory-based cache architecture is urgent and challenging. In the paper, a CPU cache architecture system based on MRAM is
Shaopu Han, Qiguang Wang, Yanfeng Jiang
doaj   +1 more source

Benchmarking and Optimization of Spintronic Memory Arrays

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
doaj   +1 more source

STT-MRAM Technology For Energy-Efficient Cryogenic Memory Applications

, 2023
This work explores non-volatile (NV) embedded memories implemented by spin-transfer torque magnetic random access memories (STT-MRAMs). Our designs are based on state-of-the-art perpendicular magnetic tunnel junctions (MTJs) along with a commercial 65 nm
Esteban Garzon (16541610), Marco Lanuzza (16542591), leonid yavits (13854935), Adam Teman (16542590)   +3 more
core   +1 more source

Screening of 193i and EUV lithography process options for STT-MRAM orthogonal array MTJ pillars

Micro and Nano Engineering, 2021
Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as the most promising candidate to replace the complementary metal-oxide-semiconductor (CMOS) based memories that are dominating the market in the last few decades.
Murat Pak, Wesley Zanders, Patrick Wong, Sandip Halder   +3 more
doaj   +1 more source