Results 11 to 20 of about 17,853 (211)

STT MRAM-Based PUFs

open access: yesDesign, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015
Physical Unclonable Functions are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. In this paper we propose an innovative design based on STT-MRAM memory. We exploit the high variability
Di Natale, Giorgio   +9 more
core   +5 more sources

Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics. [PDF]

open access: yesAdv Sci (Weinh)
Magnetoelectric coupling provides a unifying route from electric‐field control of magnetic order to non‐volatile MeRAM, MESO logic, and emerging antiferromagnetic and magnonic devices. By connecting switching physics with device benchmarks, material platforms, and integration strategies, distinctive technological opportunities are identified alongside ...
Liu Y   +13 more
europepmc   +2 more sources

Optimal Control Drives Ultrafast and Energy-Efficient Magnetization Switching in Van der Waals Magnets. [PDF]

open access: yesAdv Mater
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Badarneh MH, Cai P, Santos EJG.
europepmc   +2 more sources

Auxiliary Roles in STT-MRAM Memory

open access: yes, 2014
Computer memories now play a key role in our everyday life given the increase in the number of connected smart devices and wearables. Recently post-CMOS memory technologies are gaining significant research attention along with the regular ones.
Das, Jayita
core   +2 more sources

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit-Cell Level Co-Design of Magnetic Tunnel Junctions. [PDF]

open access: yesAdv Sci (Weinh)
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Wang Q   +6 more
europepmc   +2 more sources

Modeling Thermal Effects in STT-MRAM [PDF]

open access: yes, 2023
We employ the stochastic Landau–Lifschitz–Gilbert (sLLG) equation to explore thermal effects on switching in the spin-transfer torque magnetoresistive random access memory (STT-MRAM). The distribution of the switching times depends on the meshes used for
Selberherr, Siegfried; orcid:   +3 more
core   +1 more source

Hierarchical cache configuration based on hybrid SOT- and STT-MRAM

open access: yesAIP Advances, 2023
With the rapid growth of big data information and the continuous iteration progress of CPU architecture, the implementation of a new memory-based cache architecture is urgent and challenging. In the paper, a CPU cache architecture system based on MRAM is
Shaopu Han, Qiguang Wang, Yanfeng Jiang
doaj   +1 more source

Benchmarking and Optimization of Spintronic Memory Arrays

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
In this article, we present a cross-layer optimization and benchmarking of various spintronic memory devices, including spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling ...
Yu-Ching Liao, Chenyun Pan, Azad Naeemi
doaj   +1 more source

Programmable Topological Magnetic Textures in Above-Room-Temperature 2D Ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub>. [PDF]

open access: yesAdv Sci (Weinh)
This work demonstrates the programmable generation and deterministic modulation of magnetic skyrmion bags with high‐order topological numbers in the above‐room‐temperature 2D ferromagnet Fe3GaTe2 (FGaT) via current‐pulse control. Furthermore, highly efficient electrical manipulation and current‐driven parallel motion of these high‐order topological ...
Shi H   +8 more
europepmc   +2 more sources

WiSE : When Learning Assists Resolving STT-MRAM Efficiency Challenges

open access: yes, 2023
Spin Transfer Torque Magnetic RAM (STT-MRAM) is one of the most promising on-chip technologies, which delivers high density, non-volatility, and near-zero leakage power.
Beitollahi, Hakem,   +5 more
core   +1 more source

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