Results 81 to 90 of about 16,180,989 (156)

Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits

IEICE Transactions on Electronics, 2010
Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising technology for next generation nonvolatile universal memory because it reduces the high write current required by conventional MRAM and enables write current scaling as technology becomes smaller in size.
KIM, Jisu, SONG, Jee-Hwan, KANG, Seung-Hyuk, YOON, Sei-Seung, JUNG, Seong-Ook   +4 more
openaire   +1 more source

Design, fabrication, and characterization of magnetic nanostructures

, 2008
For several years, thin films of ferromagnetic materials with metallic spacer layers showing giant magnetoresistance (GMR) were the technological basis used in the read-heads of hard disk drives. Similarly, tunnelling magnetoresistance (TMR), which is an
Claudio Gonzalez, David
core   +1 more source

Spintronics based random access memory: a review [PDF]

This article reviews spintronics based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016.
Sbiaa, Rachid, Hirohata, Atsufumi, Piramanayagam, S.N., Ohno, Hideo, Bhatti, Sabpreet, Fukami, Shunsuke   +5 more
core   +5 more sources

2B1750 Smart Electronic Materials Non-Volatile Random Access Memory Technologies

, 2008
1 Today’s computer and information technology is strongly connected to the advancements in data storage technology. Presently the information being processed is stored in Dynamic Random Access Memory (DRAM).This RAM is quite fast but a big disadvantage ...
Muhammad Muneeb, Imran Akram, Mram Feram Pram, Aftab Nazir   +3 more
core  

Advanced hybrid MRAM based novel GPU cache system for graphic processing with high efficiency

AIP Advances
With the rapid development of portable computing devices and users’ demand for high-quality graphics rendering, embedded Graphics Processing Units (GPU) systems for graphics processing are increasingly turning into a key component of computer ...
Shaopu Han, Yanfeng Jiang
doaj   +1 more source

Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement

, 2008
Magnetic Random Access Memory (MRAM) has been considered as a promising memory technology due to many attractive properties. Integrating MRAM with CMOS logic may incur extra manufacture cost, due to its hybrid magnetic-CMOS fabrication process.
Wu, Xiaoxia, Dong, Xiangyu, Xie, Yuan, Li, Helen, Sun, Guangyu, Chen, Yiran   +5 more
core   +1 more source

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Scientific Reports
In traditional von Neumann computing architecture, the efficiency of the system is often hindered by the data transmission bottleneck between the processor and memory. A prevalent approach to mitigate this limitation is the use of non-volatile memory for
Ting Liu, Xiaoguang Li, Hongyu An, Shi Chen, Yuelei Zhao, Sheng Yang, Xiaohong Xu, Cangtao Zhou, Hua Zhang, Yan Zhou   +9 more
doaj   +1 more source

Multi-bit MRAM based high performance neuromorphic accelerator for image classification

Neuromorphic Computing and Engineering
Binary neural networks (BNNs) are the most efficient solution to bridge the design gap of the hardware implementation of neural networks in a resource-constrained environment.
Gaurav Verma, Sandeep Soni, Arshid Nisar, Brajesh Kumar Kaushik   +3 more
doaj   +1 more source

Field-free spin–orbit torque switching enabled by controllable domain wall chirality

Materials Futures
Driven by the exponential growth of artificial intelligence, the internet of things, and cloud computing, the surge in global data generation has intensified the demand for memory technologies that offer high density, ultrafast operation, and low power ...
Peiyue Yu, Meiyin Yang, Yanru Li, Shuo Xu, Ying Li, Shuaiyu Gong, Jingsong Huang, Jianfeng Gao, Weibing Liu, Shasha Wang, Lei Zhao, Enlong Liu, Wenlong Yang, Yang Gao, Shikun He, Dashan Shang, Jun Luo   +16 more
doaj   +1 more source

Field-free spin–orbit torque devices for logic and neural network applications

APL Machine Learning
Robust field-free spin–orbit torque (SOT) switching plays an essential role in realizing practical SOT-based magnetic memories and logic devices. Leveraging the strong interlayer Dzyaloshinskii–Moriya interaction, field-free SOT switching is achieved ...
Chun-Yi Lin, Jui-Yu Hsieh, Po-Chuan Wang, Chia-Chin Tsai, Chi-Feng Pai   +4 more
doaj   +1 more source