Results 101 to 110 of about 16,180,989 (156)

Field-free spin–orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Nature Communications
Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of ...
Qu Yang, Donghyeon Han, Shishun Zhao, Jaimin Kang, Fei Wang, Sung-Chul Lee, Jiayu Lei, Kyung-Jin Lee, Byong-Guk Park, Hyunsoo Yang   +9 more
doaj   +1 more source

Reduction of current for magnetization switching in a nanomagnet with perpendicular anisotropy by spin-splitter torque

Applied Physics Express
This study investigates spin-splitter torque (SST) for magnetization switching in nanoscale magnets with perpendicular anisotropy, aiming to reduce current requirements in magnetic memory devices.
Tomoki Watanabe, Keisuke Yamada, Yoshinobu Nakatani   +2 more
doaj   +1 more source

Cryogenic-temperature grain-to-grain epitaxial growth of high-quality ultrathin CoFe layer on MgFeO tunnel barrier for high-performance magnetic tunnel junctions

NPG Asia Materials
One candidate for ultimate non-volatile memory with ultralow power consumption is voltage-controlled magneto-resistive random-access memory (VC-MRAM).
Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki, Kay Yakushiji, Shingo Tamaru, Shinji Yuasa   +5 more
doaj   +1 more source

Performance impact of a slower main memory: a case study of STT-MRAM in HPC

, 2017
Memory systems are major contributors to the deployment and operational costs of large-scale HPC clusters [1][2][3], as well as one of the most important design parameters that significantly affect system performance.
Radulović, Milan, Ryoo, Kyung-Chang, Radojković, Petar, Zaragoza, David, Asifuzzaman, Kazi, Pavlovic, Milan, Kwon, Ohseong   +6 more
core  

Exploration of magnetic memory for ultra low-power systems-on-chip

, 2017
National audienceMemories are currently a real bottleneck to design high speed, low area and energy-efficient systems-on-chip (SoC). An important proportion of total power is spent on memory systems.
Patrigeon, Guillaume, Senni, Sophiane, Benoit, Pascal, Torres, Lionel   +3 more
core  

Deep-Learning-Based Adaptive Error-Correction Decoding for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising emerging non-volatile memory (NVM) technology with wide applications. However, the data recovery of STT-MRAM is affected by the diversity of channel raw bit error rate (BER ...
Kang, Peng, Cai, Kui, Dai, Bin, Song, Guanghui, Zhong, Xingwei   +4 more
core  

Self-Reference Sense Amplifier for MRAM(Magnetic-Random-Access-Memory)

Record of Joint Conference of Electrical and Electronics Engineers in Kyushu, 2004
Yoneda, Kenji, Yoshihara, Tsutomu, Ooishi, Tsukasa   +2 more
openaire   +1 more source

Future prospects and technological issues of magnetic random access memory (MRAM)

Oyo Buturi, 2000
openaire   +1 more source

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Magnetic Random Access Memory (MRAM)

Journal of Nanoscience and Nanotechnology, 2007
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading ...
Yuankai, Zheng, Yihong, Wu, Kebin, Lil, Jinjun, Qiu, Guchang, Han, Zaibing, Guo, Ping, Luo, Lihua, An, Zhiyong, Liu, Li, Wang, Seng Ghee, Tan, Baoyu, Zong, Bo, Liu   +12 more
exaly   +5 more sources

Magnetic Random Access Memory (MRAM)

2023
Abstract The principle of storing information in a solid state magnetic device is first described together with the principles and early designs of such a system which were implemented for a restricted range of applications. In particular third generation MRAM where again data is stored perpendicular to the plane of the film and is based
G Vallejo Fernández, A Hirohata, K O’Grady   +2 more
exaly   +2 more sources